R8C/33T Group 5. Electrical Characteristics
R01DS0046EJ0110 Rev.1.10 Page 34 of 47
Apr 26, 2011
Notes:
1. Vcc = 1.8 V to 5.5 V, Topr =
20°C to 85°C (N version), unless otherwise specified.
2. This enables the setting errors of bit rates such as 9600 bps and 38400 bps to be 0% when the serial interface is used in
UART mode.
Note:
1. Vcc = 1.8 V to 5.5 V, Topr =
20°C to 85°C (N version), unless otherwise specified.
Notes:
1. The measurement condition is Vcc = 1.8 V to 5.5 V and Topr = 25
°C.
2. Waiting time until the internal power supply generation circuit stabilizes during power-on.
Table 5.10 High-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
High-speed on-chip oscillator frequency after reset Vcc = 1.8 V to 5.5 V
20°C Topr 85°C
38.4 40 41.6 MHz
High-speed on-chip oscillator frequency when the
FRA4 register correction value is written into the
FRA1 register and the FRA5 register correction
value into the FRA3 register
(2)
Vcc = 1.8 V to 5.5 V
20°C Topr 85°C
35.389 36.864 38.338 MHz
High-speed on-chip oscillator frequency when the
FRA6 register correction value is written into the
FRA1 register and the FRA7 register correction
value into the FRA3 register
Vcc = 1.8 V to 5.5 V
20°C Topr 85°C
30.72 32 33.28 MHz
Oscillation stability time Vcc = 5.0 V, Topr = 25
°C—0.53ms
Self power consumption at oscillation Vcc = 5.0 V, Topr = 25
°C 400 µA
Table 5.11 Low-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
fOCO-S Low-speed on-chip oscillator frequency 60 125 250 kHz
Oscillation stability time Vcc = 5.0 V, Topr = 25
°C 30 100 µs
Self power consumption at oscillation Vcc = 5.0 V, Topr = 25
°C—2µA
Table 5.12 Power Supply Circuit Timing Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
t
d(P-R) Time for internal power supply stabilization during
power-on
(2)
2000 µs
R8C/33T Group 5. Electrical Characteristics
R01DS0046EJ0110 Rev.1.10 Page 35 of 47
Apr 26, 2011
Note:
1. 4.2 V
Vcc 5.5 V at Topr = 20°C to 85°C (N version), f(XIN) = 20 MHz, unless otherwise specified.
Table 5.13 Electrical Characteristics (1) [4.2 V Vcc 5.5 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H”
voltage
Other than XOUT Drive capacity High Vcc = 5 V IOH = 20 mA Vcc 2.0 Vcc V
Drive capacity Low Vcc = 5 V I
OH = 5 mA Vcc 2.0 Vcc V
XOUT Vcc = 5 V I
OH = 200 µA1.0 VccV
V
OL Output “L”
voltage
Other than XOUT Drive capacity High Vcc = 5 V IOL = 20 mA 2.0 V
Drive capacity Low Vcc = 5 V I
OL = 5 mA 2.0 V
XOUT Vcc = 5 V I
OL = 200 µA— 0.5V
V
T+-VT- Hysteresis
INT0
, INT1,
INT2
, INT3,
KI0
, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRCTRG, TRCCLK,
ADTRG
,
RXD0, RXD2,
CLK0, CLK2,
SCL2, SDA2
0.1 1.2 V
RESET
0.1 1.2 V
I
IH Input “H” current VI = 5 V, Vcc = 5.0 V 5.0 µA
I
IL Input “L” current VI = 0 V, Vcc = 5.0 V 5.0 µA
R
PULLUP Pull-up resistance VI = 0 V, Vcc = 5.0 V 25 50 100 k
RfXIN Feedback
resistance
XIN 0.3 M
VRAM RAM hold voltage During stop mode 1.8 V
R8C/33T Group 5. Electrical Characteristics
R01DS0046EJ0110 Rev.1.10 Page 36 of 47
Apr 26, 2011
Table 5.14 Electrical Characteristics (2) [3.3 V Vcc 5.5 V]
(Topr =
20
°
C to 85
°
C (N version), unless otherwise specified.)
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
I
CC Power supply current
(Vcc = 3.3 V to 5.5 V)
Single-chip mode,
output pins are open,
other pins are Vss
High-speed
clock mode
XIN = 20 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
—6.515mA
XIN = 16 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
5.3 12.5 mA
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
No division
—3.6—mA
XIN = 20 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
—3—mA
XIN = 16 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
—2.2—mA
XIN = 10 MHz (square wave)
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
—1.5—mA
High-speed
on-chip
oscillator mode
XIN clock off
High-speed on-chip oscillator on fOCO-F = 20 MHz
Low-speed on-chip oscillator on = 125 kHz
No division
—715mA
XIN clock off
High-speed on-chip oscillator on fOCO-F = 20 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8
—3—mA
XIN clock off
High-speed on-chip oscillator on fOCO-F = 4 MHz
Low-speed on-chip oscillator on = 125 kHz
Divide-by-16
MSTTRD = MSTTRC = 1
—1—mA
Low-speed
on-chip
oscillator mode
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
Divide-by-8, FMR27 = 1, VCA20 = 0
—90400µA
Wait mode
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock operation
VCA27 = VCA26 = VCA25 = 0, VCA20 = 1
—15100µA
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator on = 125 kHz
While a WAIT instruction is executed
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0, VCA20 = 1
—490µA
XIN clock off
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
While a WAIT instruction is executed
VCA27 = VCA26 = VCA25 = 0, VCA20 = 1
—3.5—µA
Stop mode
XIN clock off, Topr = 25°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
—25.0µA
XIN clock off, Topr = 85°C
High-speed on-chip oscillator off
Low-speed on-chip oscillator off
CM10 = 1
Peripheral clock off
VCA27 = VCA26 = VCA25 = 0
—5—µA

R5F21336TNFP#50

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
16-bit Microcontrollers - MCU R8/C33T 32+4K 1.8/5.5V -20TO85 32LQFP TR
Lifecycle:
New from this manufacturer.
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