19©2016 Integrated Device Technology, Inc Revision A April 28, 2016
844S42I Data Sheet
Termination for 3.3V LVPECL Outputs
The clock layout topology shown below is a typical
termination for LVPECL outputs. The two different
layouts mentioned are recommended only as guidelines.
The differential outputs are low impedance follower outputs that
generate ECL/LVPECL compatible outputs. Therefore, terminating
resistors (DC current path to ground) or current sources must be
used for functionality. These outputs are designed to drive 50
transmission lines. Matched impedance techniques should be used
to maximize operating frequency and minimize signal distortion.
Figures 6A and 6B show two different layouts which are
recommended only as guidelines. Other suitable clock layouts may
exist and it would be recommended that the board designers simulate
to guarantee compatibility across all printed circuit and clock
component process variations.
Figure 6A. 3.3V LVPECL Output Termination Figure 6B. 3.3V LVPECL Output Termination
R1
84
R2
84
3.3V
R3
125
R4
125
Z
o
= 50
Z
o
= 50
Input
3.3V
3.3V
+
_
20©2016 Integrated Device Technology, Inc Revision A April 28, 2016
844S42I Data Sheet
Schematic Example
Figure 7 shows an example of 844S42I application schematic. In this example, the device is operated at V
DD
= V
DDOA
= V
DDOB
= 3.3V. The
18pF parallel resonant 16MHz crystal is used. The C1 and C2 = 22pF and are recommended for frequency accuracy. For differential board
layouts, the C1 and C2 may be slightly adjusted for optimizing frequency accuracy. Two examples of LVPECL terminations and one example
LVDS termination are shown in this schematic. Additional termination approaches are shown in the LVPECL Termination Application Note.
Figure 7. 844S42I Schematic Example
C2
22pF
VDDOB
nMR
(U1:40)
NA2
RU1
1K
(U1:41)
nBYPASS
R13 0
LVPECL
Termination
NA0
M4
M9
M0
Zo = 50 Ohm
C11
0.1u
Zo = 50 Ohm
nPLOAD
Zo = 50 Ohm
(U1:14)
M6
M2
VDD
+
-
(U1:30)
U1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
39
38
37
36
35
34
33
32
31
30
29
28
27
52
51
50
49
48
47
46
45
44
43
42
41
40
53
54
55
56
57
58
59 60
61
GND
nc
nBYPASS
nc
VDD
REF_CLK
GND
REF_SEL
XTA L_ I N
XTA L_ OU T
nMR
LOCK_DT
LEV_SEL
VDD
VDD
GND
P
NA0
NA1
NA2
NB0
NB1
NB2
SDA
SCL
nPLOAD
QA
nQA
GND
GND
GND
GND
QB
nQB
VDDOB
VDDOB
nc
VDD
GND
M8
M7
M6
M5
M4
M3
M2
M1
M0
nc
nc
VDDOA
VDDOA
M9
ADR0
ADR1
VDDA
PAD
PAD1
PAD2 PAD3
PAD4
To Logic
Input
pins
VDDOA
+
-
R1
10
M5
C12
0.1u
LEV_SEL
VDDA
C9
0.1u
R7
50
nQA
VDD
VDDOB
To Logic
Input
pins
VCC = VCCOA= VCCOB = 3.3V
VDD
R14
100
SDA
NB2
RD1
Not Install
Zo = 50 Ohm
nQ
Logic Control Input Examples
VDD
VDD
(U1:28)
LOCK_DT
SDA
LVDS
Termination_Option
(U1:5)
J1
1
2
3
4
5
C5
0.1u
RD2
1K
Zo = 50 Ohm
REF_SEL
NA1
M7
NB0
C10
0.1u
QA
R9
50
VDD
VDD
M8
C3
10u
C7
0.1u
QB
XTAL_OUT
NB1
R2
133
VDD
VDDOA
Q1
LVCMOS_Driv er
GND
GND
nQB
Q
C8
0.1u
Optional
Y-Termination
(U1:15)
R8
50
X1
16MHz, CL=18pF
C6
0.1u
+
-
M3
ADR0
Zo = 50 Ohm
REF_CLK
R6
82.5
R4
33
3.3V
VDD
ADR1
R5
82.5
R10
SP
R3
133
Set Logic
Input to
'1'
M1
C4
0.01u
VDD
RU2
Not Install
R11
SP
Set Logic
Input to
'0'
(U1:31)
C1
22pF
SCL
SCL
XTAL_IN
Zo = 50
R12 0
21©2016 Integrated Device Technology, Inc Revision A April 28, 2016
844S42I Data Sheet
Power Considerations – LVPECL Outputs
This section provides information on power dissipation and junction temperature for the 844S42I, for all outputs that are configured to LVPECL
(LEV_SEL = 1). Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the 844S42I is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for V
DD
= 3.3V + 5% = 3.465V, which gives worst case results.
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
Power (core)
MAX
= V
DD_MAX
* I
GND_MAX
= 3.465V * 260mA = 900.9mW
Power (outputs)
MAX
= 36mW/Loaded Output pair
If all outputs are loaded, the total power is 2 * 36mW = 72mW
Total Power_
MAX
(3.465V, with all outputs switching) = 800.9mW + 72mW = 972.9mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond
wire and bond pad temperature remains below 125°C.
The equation for Tj is as follows: Tj =
JA
* Pd_total + T
A
Tj = Junction Temperature
JA
= Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
A
= Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
JA
must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 31.4°C/W per Table 7A below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.973W * 31.4°C/W = 115.6°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 7A. Thermal Resistance
JA
for 56 Lead VFQFN Forced Convection
JA
by Velocity
Meters per Second 012.5
Multi-Layer PCB, JEDEC Standard Test Boards 31.4°C/W 27.5°C/W 24.6°C/W

844S42BKILF

Mfr. #:
Manufacturer:
IDT
Description:
Clock Synthesizer / Jitter Cleaner LVPECL/LVDS 2-OUT RF SYNTHESIZER
Lifecycle:
New from this manufacturer.
Delivery:
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