22©2016 Integrated Device Technology, Inc Revision A April 28, 2016
844S42I Data Sheet
3. Calculations and Equations.
The purpose of this section is to calculate the power dissipation for the LVPECL output pairs.
LVPECL output driver circuit and termination are shown in Figure 8.
Figure 8. LVPECL Driver Circuit and Termination
To calculate worst case power dissipation into the load, use the following equations which assume a 50 load, and a termination voltage of
V
DDO
– 2V.
For logic high, V
OUT
= V
OH_MAX
= V
DDO_MAX
– 0.8V
(V
DDO_MAX
– V
OH_MAX
) = 0.8V
For logic low, V
OUT
= V
OL_MAX
= V
DDO_MAX
– 1.4V
(V
DDO_MAX
– V
OL_MAX
) = 1.4V
Pd_H is power dissipation when the output drives high.
Pd_L is the power dissipation when the output drives low.
Pd_H = [(V
OH_MAX
– (V
DDO_MAX
– 2V))/R
L
] * (V
DDO_MAX
– V
OH_MAX
) = [(2V – (V
DDO_MAX
– V
OH_MAX
))/R
L
] * (V
DDO_MAX
– V
OH_MAX
) =
[(2V – 0.8V)/50] * 0.8V = 19.2mW
Pd_L = [(V
OL_MAX
– (V
DDO_MAX
– 2V))/R
L
] * (V
DDO_MAX
– V
OL_MAX
) = [(2V – (V
DDO_MAX
– V
OL_MAX
))/R
L
] * (V
DDO_MAX
– V
OL_MAX
) =
[(2V – 1.4V)/50] * 1.4V = 16.8mW
Total Power Dissipation per output pair = Pd_H + Pd_L = 36mW
V
OUT
V
DDO
V
DDO
- 2V
Q1
RL
50Ω
23©2016 Integrated Device Technology, Inc Revision A April 28, 2016
844S42I Data Sheet
Power Considerations – LVDS Outputs
This section provides information on power dissipation and junction temperature for the 844S42I for all outputs that are configured to LVDS
(LEV_SEL = 0). Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the 844S42I is the sum of the core power plus the analog power plus the power dissipated in the load(s). The
following is the power dissipation for V
DD
= 3.3V + 5% = 3.465V, which gives worst case results.
The maximum current at 85°C is as follows:
I
DD_MAX
= 185mA
I
DDA_MAX
= 22mA
I
DDO_MAX
= 50mA
Power (core)
MAX
= V
DD_MAX
* (I
DD_MAX
+ I
DDA_MAX
) = 3.465V * (185mA + 22mA) = 717.255mW
Power (output)
MAX
= V
DDO_MAX
* (I
DDOA
+ I
DDOB
) = 3.465V * 50mA = 173.25mW
Total Power_
MAX
= 717.255mW + 173.25mW = 890.505mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond
wire and bond pad temperature remains below 125°C.
The equation for Tj is as follows: Tj =
JA
* Pd_total + T
A
Tj = Junction Temperature
JA
= Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
A
= Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
JA
must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 31.4°C/W per Table 7B below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.891W * 31.4°C/W = 113°C. This is well below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 7B. Thermal Resistance
JA
for 56 Lead VFQFN, Forced Convection
JA
by Velocity
Meters per Second 012.5
Multi-Layer PCB, JEDEC Standard Test Boards 31.4°C/W 27.5°C/W 24.6°C/W
Reliability Information
Table 8.
JA
vs. Air Flow Table for a 56 Lead VFQFN
Transistor Count
The transistor count for 844S42I is: 10,263
JA
vs. Air Flow
Meters per Second 012.5
Multi-Layer PCB, JEDEC Standard Test Boards 31.4°C/W 27.5°C/W 24.6°C/W

844S42BKILF

Mfr. #:
Manufacturer:
IDT
Description:
Clock Synthesizer / Jitter Cleaner LVPECL/LVDS 2-OUT RF SYNTHESIZER
Lifecycle:
New from this manufacturer.
Delivery:
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