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MAX6876ETX+T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39
MAX6876
EEPROM-Programmable, Quad,
Power-Supply Tracker/Sequencer Circuit
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
, IN1–IN4 = +2.7V to +5.5V; ENABLE = MARGIN = MR = ABP = TRKEN; T
A
= -40°C to +85°C, unless otherwise specified.
Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
00
93.75
95
96.25
01
91.25 92.5 93.75
10
88.75
90
91.25
IN_ to OUT_ Power-Good
Threshold
V
TH_PG
Register
contents
(Table 16),
OUT_ rising
11
86.25 87.5 88.75
%
V
TH_PG and
V
TH_OC
Hysteresis
V
OUT_HYS
0.5 %
Power Low Threshold V
TH_PL
OUT_ falling 125
142
165 mV
Power Low Hysteresis
V
TH_PL_HYS
10 mV
OUT_ to GND Pulldown
Impedance (When Enabled)
ABP ≥ 2.5V
100
Ω
ABP ≥ 2.5V, I
SINK
= 4mA 0.3
REM Output Low
V
OL_REM
ABP ≥ 4.0V, I
SINK
= 15mA 0.4
V
ABP ≥ 1.4V, I
SINK
= 50µA (PG_, RESET
only)
0.3
ABP ≥ 2.5V, I
SINK
= 1mA 0.3
Output Low PG1–PG4, HOLD,
FAULT, OC, RESET (Note 2)
V
OL
ABP ≥ 4.0V, I
SINK
= 4mA 0.4
V
ABP ≥ 1.4V, I
SINK
= 50µA 0.3
ABP ≥ 2.5V, I
SINK
= 1mA 0.3
GATE1–GATE4 Output Low V
GOL
ABP ≥ 4.0V, I
SINK
= 4mA 0.8
V
PG1–PG4, HOLD, FAULT, OC ,
RESET, REM Output Open-Drain
Leakage Current
I
LKG
Output deasserted -1 +1 µA
GATE_ Output-Voltage High V
GOH
I
GATE_
= 0.5µA
IN_ +
4.4
IN_ + 5
IN_ +
5.8
V
GATE_ Pullup Current
I
GATEUP
During power-up/down, V
GATE_
= 1V 2.5 4.5 µA
GATE_ Pulldown Current
I
GATEDOWN
During power-up/down, V
GATE_
= 4V 2.5 4.5 µA
V
IL
0.3 x
ABP
MARGIN, FAULT, HOLD, MR,
ENABLE Input Voltage
V
IH
0.6 x
ABP
V
MR Input Pulse Width t
MR
2µs
FAULT, HOLD, MARGIN, MR,
ENABLE Glitch Rejection
100
ns
Digital Input to Logic Delay,
FAULT, HOLD, MARGIN, MR,
ENABLE
t
D
1µs
MARGIN, MR Digital Input to ABP
Pullup Resistance
R
P
70
100
130 kΩ
MAX6876
EEPROM-Programmable, Quad,
Power-Supply Tracker/Sequencer Circuit
_______________________________________________________________________________________ 5
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
, IN1–IN4 = +2.7V to +5.5V; ENABLE = MARGIN = MR = ABP = TRKEN; T
A
= -40°C to +85°C, unless otherwise specified.
Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
TRKEN Input Delay t
EN
TRKEN falling, 100mV overdrive 2 µs
Input rising
1.245 1.285 1.320
TRKEN Reference Voltage Range
V
TRKEN
Input falling
1.225 1.25 1.275
V
TRKEN Input Current I
TRKEN
V
TRKEN
= 1.25V
-100 +100
nA
Reference Input Voltage Range V
REFIN
1.225 1.25 1.275
V
Reference Input Resistance R
REFIN
V
REFIN
= 1.25V
500
kΩ
SERIAL INTERFACE LOGIC (SDA, SCL, A0, A1)
Logic-Input Low Voltage V
IL
0.3 x
ABP
V
Logic-Input High Voltage V
IH
0.6 x
ABP
V
Input Leakage Current I
ILKG
1µA
Output-Voltage Low V
OL
I
SINK
= 3mA 0.4 V
Output Leakage Current I
OLKG
1µA
Input/Output Capacitance C
I/O
10 pF
SERIAL INTERFACE TIMING (SDA, SCL)
Serial Clock Frequency f
SCL
400
kHz
Clock Low Period t
LOW
1.3 µs
Clock High Period t
HIGH
0.6 µs
Bus Free Time t
BUF
1.3 µs
START Setup Time t
SU:STA
0.6 µs
START Hold Time t
HD:STA
0.6 µs
STOP Setup Time t
SU:STO
0.6 µs
Clock Low to Valid Output t
AA
0.1 0.9 µs
Data Out Hold Time t
DH
50 ns
Data In Setup Time t
SU:DAT
100
ns
Data In Hold Time
t
HD:DAT
0ns
SCL/SDA Rise Time t
R
300
ns
SCL/SDA Fall Time t
F
300
ns
Transmit SDA Fall Time t
F
C
BUS
= 400pF
20 +
0.1 x
C
BUS
300 ns
SCL/SDA Noise Suppression Time
t
I
50 ns
Byte Write Cycle Time t
WR
11 ms
Note 1: Specifications guaranteed for the stated global conditions. 100% production tested at T
A
= +25°C and T
A
= +85°C.
Specifications at T
A
= -40°C are guaranteed by design.
Note 2: The internal supply voltage, measurable on ABP, is equal to the maximum of IN1–IN4 and V
CC
supplies.
Note 3: Differential between each of the OUT_ and the SYNCH ramp voltage during power-up/down measured as V
OUT_
- 2 x
V
SYNCH
.
Note 4: FAULT timeout starts to count at the beginning of each sequence of power-up/down and clears when the programmed
OUT_ voltages track successfully.
MAX6876
EEPROM-Programmable, Quad,
Power-Supply Tracker/Sequencer Circuit
6 _______________________________________________________________________________________
Timing Diagrams
IN4 = 1.5V
IN3 = 1.8V
IN2 = 2.5V
IN1 = 3.3V
V
TRKEN
GND
GND
GND
GND
FAULT
OUT4 = 1.5V
OUT3 = 1.8V
OUT2 = 2.5V
OUT1 = 3.3V
RESET
GND
BUS VOLTAGE MONITORED THROUGH TRKEN INPUT
V
TRKEN
MONITORED THROUGH SET THRESHOLDS ON IN_
INPUTS (EEPROM-SELECTABLE)
t
GATE
<t
FAULTUP
t
RESET
>t
FAULTDOWN
EEPROM-
ADJUSTED
SLEW RATE
Figure 1. Tracking Timing Diagram
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
, IN1–IN4 = +2.7V to +5.5V; ENABLE = MARGIN = MR = ABP = TRKEN; T
A
= -40°C to +85°C, unless otherwise specified.
Typical values are at T
A
= +25°C.) (Note 1)
Note 5: The MAX6876 programmed as a single device; GATE timeout has counted prior to beginning each sequence of power-up.
GATE timeout is not enabled during power-down or when the device is programmed as a master/slave.
Note 6: The MAX6876 programmed as a single device, the autoretry time begins to count at the assertion of the FAULT signal.
The MAX6876 programmed as a master/slave device; the autoretry time begins to count at the deassertion of the
common FAULT signal.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39

MAX6876ETX+T

Mfr. #:
Buy MAX6876ETX+T
Manufacturer:
Maxim Integrated
Description:
Supervisory Circuits EEPROM-Prog Quad Power-Sup Sequence
Lifecycle:
New from this manufacturer.
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