A
Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS-25017A 04/11
Data Sheet
www.microchip.com
Features
Single Voltage Read and Write Operations
2.7-3.6V
Serial Interface Architecture
Nibble-wide multiplexed I/O’s with SPI-like serial com-
mand structure
- Mode 0 and Mode 3
Single-bit, SPI backwards compatible
- Read, High-Speed Read, and JEDEC ID Read
High Speed Clock Frequency
80 MHz
- 320 Mbit/s sustained data rate
Burst Modes
Continuous linear burst
8/16/32/64 Byte linear burst with wrap-around
Index Jump
Jump to address index within 256 Byte Page
Jump to address index within 64 KByte Block
Jump to address index in another 64 KByte Block
Superior Reliability
Endurance: 100,000 cycles
Greater than 100 years data retention
Low Power Consumption:
Active Read current: 12 mA (typical @ 80 MHz)
Standby current: 8 µA (typical)
Fast Erase and Byte-Program:
Chip-Erase time: 35 ms (typical)
Sector-/Block-Erase time: 18 ms (typical)
Page-Program
256 Bytes per page
Fast Page Program time in 1 ms (typical)
End-of-Write Detection
Software polling the BUSY bit in status register
Flexible Erase Capability
Uniform 4 KByte sectors
Four 8 KByte top parameter overlay blocks
Four 8 KByte bottom parameter overlay blocks
Two 32 KByte overlay blocks (one each top and bottom)
Uniform 64 KByte overlay blocks
- SST26VF016 30 blocks
- SST26VF032 62 blocks
Write-Suspend
Suspend program or Erase operation to access another
block/sector
Software Reset (RST) mode
Software Write Protection
Block-Locking
- 64 KByte blocks, two 32 KByte blocks, and eight 8
KByte parameter blocks
Security ID
One-Time Programmable (OTP) 256 bit, Secure ID
- 64 bit Unique, factory pre-programmed identifier
- 192 bit user-programmable
Temperature Range
Industrial: -40°C to +85°C
Packages Available
8-contact WSON (6mm x 5mm)
8-lead SOIC (200 mil)
All devices are RoHS compliant
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
The SST26VF016 / SST26VF032 Serial Quad I/O™ (SQI™) flash device utilizes
a 4-bit multiplexed I/O serial interface to boost performance while maintaining the
compact form factor of standard serial flash devices. Operating at frequencies
reaching 80 MHz, the SST26VF016 / SST26VF032 enables minimum latency
execute-in-place (XIP) capability without the need for code shadowing on an
SRAM. The device’s high performance and small footprint make it the ideal choice
for mobile handsets, Bluetooth® headsets, optical disk drives, GPS applications
and other portable electronic products. Further benefits are achieved with SST’s
proprietary, high-performance CMOS SuperFlash® technology, which significantly
improves performance and reliability, and lowers power consumption for high
bandwidth, compact designs.
©2011 Silicon Storage Technology, Inc. DS-25017A 04/11
2
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
A
Microchip Technology Company
Product Description
The Serial Quad I/O™ (SQI™) family of flash-memory devices features a 4-bit, multiplexed I/O inter-
face that allows for low-power, high-performance operation in a low pin-count package. System
designs using SQI flash devices occupy less board space and ultimately lower system costs.
All members of the 26 Series, SQI family are manufactured with SST proprietary, high-performance
CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain bet-
ter reliability and manufacturability compared with alternate approaches.
The SST26VF016/032 significantly improve performance and reliability, while lowering power con-
sumption. These devices write (Program or Erase) with a single power supply of 2.7-3.6V. The total
energy consumed is a function of the applied voltage, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses less current to program and has a shorter erase
time, the total energy consumed during any Erase or Program operation is less than alternative flash
memory technologies.
SST26VF016/032 are offered in both 8-contact WSON (6 mm x 5 mm), and 8-lead SOIC (200 mil)
packages. See Figure 2 for pin assignments.
©2011 Silicon Storage Technology, Inc. DS-25017A 04/11
3
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
A
Microchip Technology Company
Block Diagram
Figure 1: Functional Block Diagram
1359 B1.0
Page Buffer,
I/O Buffers
and
Data Latches
SuperFlash
Memory
X - Decoder
Control Logic
Address
Buffers
and
Latches
CE#
Y - Decoder
SCK SIO [3:0]
Serial Interface

SST26VF016-80-5I-QAE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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