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SST26VF016-80-5I-QAE-T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39
©2011 Silicon Storage Technology, Inc. DS-25017A 04/11
28
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
A
Microchip Technology Company
31 200000H - 20FFFFH 64 KByte
30 1F0000H - 1FFFFFH 64 KByte
29 1E0000H - 1EFFFFH 64 KByte
28 1D0000H - 1DFFFFH 64 KByte
27 1C0000H - 1CFFFFH 64 KByte
26 1B0000H - 1BFFFFH 64 KByte
25 1A0000H - 1AFFFFH 64 KByte
24 190000H - 19FFFFH 64 KByte
23 180000H - 18FFFFH 64 KByte
22 170000H - 17FFFFH 64 KByte
21 160000H - 16FFFFH 64 KByte
20 150000H - 15FFFFH 64 KByte
19 140000H - 14FFFFH 64 KByte
18 130000H - 13FFFFH 64 KByte
17 120000H - 12FFFFH 64 KByte
16 110000H - 11FFFFH 64 KByte
15 100000H - 10FFFFH 64 KByte
14 0F0000H - 0FFFFFH 64 KByte
13 0E0000H - 0EFFFFH 64 KByte
12 0D0000H - 0DFFFFH 64 KByte
11 0C0000H - 0CFFFFH 64 KByte
10 0B0000H - 0BFFFFH 64 KByte
9 0A0000H - 0AFFFFH 64 KByte
8 090000H - 09FFFFH 64 KByte
7 080000H - 08FFFFH 64 KByte
6 070000H - 07FFFFH 64 KByte
5 060000H - 06FFFFH 64 KByte
4 050000H - 05FFFFH 64 KByte
3 040000H - 04FFFFH 64 KByte
2 030000H - 03FFFFH 64 KByte
1 020000H - 02FFFFH 64 KByte
0 010000H - 01FFFFH 64 KByte
T9.0 25017
1. All blocks are write-locked and read-unlocked after power-up or reset.
Table 9: Block-Protection Register for 26VF032 (Continued) (2 of 2)
1
BPR Bits
Address Range Protected Block SizeRead Lock Write Lock
©2011 Silicon Storage Technology, Inc. DS-25017A 04/11
29
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
A
Microchip Technology Company
Lockdown Block-Protection Register (LBPR)
The Lockdown Block-Protection Register instruction prevents changes to the Block-Protection Regis-
ter. Lockdown resets after power cycling; this allows the Block-Protection Register to be changed.
To execute a Lockdown Block-Protection Register, the host drives CE# low, then sends the Lockdown
Block-Protection Register command cycle (8DH), then drives CE# high. A cycle is two nibbles long,
most significant nibble first.
Figure 24:Lockdown Block-Protection Register
1359 F30.0
MODE 3 0 1
SCK
SIO(3:0)
CE#
C1 C0
MODE 0
Note: C[1:0]=8DH
©2011 Silicon Storage Technology, Inc. DS-25017A 04/11
30
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
A
Microchip Technology Company
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias .............................................. -55°C to +125°C
Storage Temperature................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential .............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Package Power Dissipation Capability (T
A
= 25°C)................................... 1.0W
Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds
Output Short Circuit Current
1
................................................... 50mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Operating Range
Range Ambient Temp V
DD
Industrial -40°C to +85°C 2.7-3.6V
Table 10:AC Conditions of Test
1
1. See Figure 29
Input Rise/Fall Time Output Load
3ns C
L
=30pF
T10.1 25017
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39

SST26VF016-80-5I-QAE-T

Mfr. #:
Buy SST26VF016-80-5I-QAE-T
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh
Lifecycle:
New from this manufacturer.
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