©2011 Silicon Storage Technology, Inc. DS-25017A 04/11
31
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
A
Microchip Technology Company
Power-Up Specifications
All functionalities and DC specifications are specified for a V
DD
ramp rate of greater than 1V per 100
ms (0V to 2.7V in less than 270 ms). See Table 11 and Figure 25 for more information.
Figure 25:Power-up Timing Diagram
Table 11:Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
V
DD
Min to Read Operation 100 µs
T
PU-WRITE
1
V
DD
Min to Write Operation 100 µs
T11.0 25017
Time
V
DD
Min
V
DD
Max
V
DD
Device fully accessible
T
PU-READ
T
PU-WRITE
Chip selection is not allowed.
Commands may not be accepted or properly
interpreted by the device.
1359 F27.0
©2011 Silicon Storage Technology, Inc. DS-25017A 04/11
32
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
A
Microchip Technology Company
DC Characteristics
Table 12:DC Operating Characteristics (V
DD
= 2.7- 3.6V)
Symbol Parameter
Limits
Test ConditionsMin Typ Max Units
I
DDR
Read Current 12 18 mA V
DD
=V
DD
Min,
CE#=0.1 V
DD
/0.9 V
DD
@33 MHz,
SO=open
I
DDW
Program and Erase Cur-
rent
30 mA CE#=V
DD
I
SB1
Standby Current 8 15 µA CE#=V
DD
,V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7
V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-
0.2
VI
OH
=-100 µA, V
DD
=V
DD
Min
T12.0 25017
Table 13:Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
C
OUT
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Output Pin Capacitance V
OUT
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF
T13.0 25017
Table 14:Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Endurance 100,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T14.0 25017
©2011 Silicon Storage Technology, Inc. DS-25017A 04/11
33
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
Data Sheet
A
Microchip Technology Company
AC Characteristics
Table 15:AC Operating Characteristics
Symbol Parameter
Limits - 33 MHz Limits - 80 MHz
UnitsMin Max Min Max
F
CLK
Serial Clock Frequency 33 80 MHz
T
CLK
Serial Clock Period 30 12.5 ns
T
SCKH
Serial Clock High Time 13 5.5 ns
T
SCKL
Serial Clock Low Time 13 5.5 ns
T
SCKR
1
1. Maximum Rise and Fall time may be limited by T
SCKH
and T
SCKL
requirements
Serial Clock Rise Time (slew
rate)
0.1 0.1 V/ns
T
SCKF
1
Serial Clock Fall Time (slew
rate)
0.1 0.1 V/ns
T
CES
2
2. Relative to SCK.
CE# Active Setup Time 12 5 ns
T
CEH
2
CE# Active Hold Time 12 5 ns
T
CHS
2
CE# Not Active Setup Time 10 3 ns
T
CHH
2
CE# Not Active Hold Time 10 3 ns
T
CPH
CE# High Time 100 12.5 ns
T
CHZ
CE# High to High-Z Output 14 12.5 ns
T
CLZ
SCK Low to Low-Z Output 0 0 ns
T
DS
Data In Setup Time 3 3 ns
T
DH
Data In Hold Time 4 4 ns
T
OH
Output Hold from SCK Change 0 0 ns
T
V
Output Valid from SCK 12 6 ns
T
SE
Sector-Erase 25 25 ms
T
BE
Block-Erase 25 25 ms
T
SCE
Chip-Erase 50 50 ms
T
PP
Page-Program 1.5 1.5 ms
T
PSID
Program Security ID 0.2 0.2 ms
T
WS
Write-Suspend Latency 10 10 µs
T15.1 25017

SST26VF016-80-5I-QAE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union