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Figure 5 Collector Emitter Breakdown Voltage BV
CER
vs. Resistor R_B/GND
Note: The above figure shows the collector-emitter breakdown voltage BVCER with a resistor R_B/GND
between base and emitter. Only for very high R_B/GND values ("open base") the breakdown voltage is
as low as BVCEO (here 6.7 V). With decreasing R_B/GND values BVCER increases, e.g. at R_B/GND=10
kOhm to BVCER=10 V. In the application the biasing base resistance together with block capacitors
take over the function of R_B/GND and allows the RF voltage amplitude to swing up to voltages much
higher than BVCEO, no clipping occurs. Due to this eect the transistor can be biased at VCE=5 V and
still high RF output powers achieved, see the OP1dB values reported in Chapter 4.2.
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Preliminary Datasheet 10 Revision 2.0
2017-02-16
