Figure 10 Maximum Power Gain Gmax vs. V
CE
at I
C
= 250 mA, f = Parameter
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
1
1.5
1.5
2
2
3
3
4
4
5
5
10
10
0.5
0.5
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.01 to 6 GHz
1.0
2.0
3.0
4.0
5.0
6.0
0.01
70 mA
150 mA
200 mA
250 mA
Figure 11 Output Reflection Coeicient S
22
vs. f at V
CE
= 5 V, I
C
= Parameter
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Preliminary Datasheet 13 Revision 2.0
2017-02-16
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
1
1.5
1.5
2
2
3
3
4
4
5
5
10
10
0.5
0.5
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.01 to 6 GHz
1.0
2.0
3.0
4.0
5.0
6.0
0.01
70 mA
150 mA
200 mA
250 mA
Figure 12 Input Reflection Coeicient S
11
vs. f at V
CE
= 5 V, I
C
= Parameter
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
1
1.5
1.5
2
2
3
3
4
4
5
5
10
10
0.5
0.5
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.45 to 3.5 GHz
0.45
0.9
1.5
1.8
2.6
3.0
3.5
70 mA
150 mA
200 mA
250 mA
Figure 13 Source Impedance Z
Sopt
for Minimum Noise Figure vs. f at V
CE
= 5V, I
C
= Parameter
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Preliminary Datasheet 14 Revision 2.0
2017-02-16
0 0.5 1 1.5 2 2.5 3 3.5 4
1
1.5
2
2.5
3
3.5
4
4.5
5
f [GHz]
NF
min
[dB]
I
C
= 70 mA
I
C
= 150 mA
I
C
= 200 mA
I
C
= 250 mA
Figure 14 Noise Figure NF
min
vs. f at V
CE
= 5 V, ZS = Z
Sopt
, I
C
= Parameter
0 50 100 150 200 250
1
1.5
2
2.5
3
3.5
4
4.5
5
I
C
[mA]
NF
min
[dB]
f = 1.5 GHz
f = 1.8 GHz
f = 2.6 GHz
f = 3.5 GHz
Figure 15 Noise Figure NF
min
vs. IC at V
CE
= 5 V, Z
S
= Z
Sopt
, f = Parameter
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Preliminary Datasheet 15 Revision 2.0
2017-02-16

BFQ790H6327XTSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors RF BIP TRANSISTORS
Lifecycle:
New from this manufacturer.
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