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BFQ790H6327XTSA1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
−25 −20 −15 −10 −5 0 5 10 15
−10
0
10
20
30
40
50
P
in
[dBm]
Pout [dBm], Gain [dB], PAE [%]
Pout
G
PAE
I
C
250
255
260
265
270
275
280
I
C
[mA]
IP1dB
Figure 22 P
out
, Gain, I
C
, PAE vs. P
in
at V
CE
= 5 V, I
Cq
= 250 mA, f = 2.6 GHz, Z
I
= Z
opt
50 100 150 200 250
32
33
34
35
36
37
38
39
I
C
[mA]
OIP3 [dBm]
Figure 23 OIP3 vs. I
C
at V
CE
= 5 V, f = 0.9 GHz, Z
L
= Z
Lopt
Note: The curves shown in this chapter have been generated using typical devices but shall not be
understood as a guarantee that all devices have identical characteristic curves. T
A
= 25 °C.
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Preliminary Datasheet 19 Revision 2.0
2017-02-16
5 Simulation Data
For the BFQ790 a large signal model exists. It is a VBIC model, which is an advancement of the SPICE Gummel-
Poon model. It covers properties of a power transistor which are not known by the standard SPICE Gummel-
Poon model, such as self-heating, quasi-saturation and voltage breakdown. The VBIC model can be used in
standard simulation tools such as ADS and MWO as easily as the SPICE Gummel-Poon model. On the BFQ790
internet page the VBIC model is provided as a netlist. The model already contains the package parasitics and is
ready to use for DC and high frequency simulations. Besides the DC characteristics all S-parameters in
magnitude and phase, noise figure (including optimum source impedance and equivalent noise resistance),
intermodulation and compression have been extracted.
On the BFQ790 internet page you also find the S-parameters (including noise parameters) for linear simulation.
In any case please consult our website and download the latest versions before actually starting your design.
BFQ790
High Linearity RF Medium Power Amplifier
Simulation Data
Preliminary Datasheet 20 Revision 2.0
2017-02-16
6 Package Information SOT89
SOT89-PO V02
0.45
+0.2
1) Ejector pin markings possible
1.5
3
0.2
-0.1
B
0.25
1)
±0.05
45˚
0.15
2.5
±0.1
4
±0.25
M
B
B
0.15
±0.1
0.35
±0.2
1
1.5
±0.1
±0.2
1.6
-0.15
+0.1
2.75
±0.1
4.5
±0.1
1
x3
0.2 MAX.
1)
1 2 3
Figure 24 Package Outline (dimension in mm)
0.8
0.8
2.0
1.0
1.2
2.5
0.7
SOT89-FP V02
Figure 25 Package Footprint (dimension in mm)
Figure 26 Marking Example (marking BFQ790: R3)
SOT89-TP V02
8
4.3
1.6
4.6
12
Pin 1
Figure 27 Tape Dimensions (dimension in mm)
BFQ790
High Linearity RF Medium Power Amplifier
Package Information SOT89
Preliminary Datasheet 21 Revision 2.0
2017-02-16
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

BFQ790H6327XTSA1

Mfr. #:
Buy BFQ790H6327XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors RF BIP TRANSISTORS
Lifecycle:
New from this manufacturer.
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