Measurement setup for the AC characteristics shown in Table 7 to Table 10 is a test fixture with Bias T’s and
tuners to adjust the source and load impedances in a 50 Ω system, T
A
= 25 °C.
Figure 2 BFQ790 Testing Circuit
Table 7 AC Characteristics, V
CE
= 5 V, f = 0.9 GHz
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
G
ms
|S
21
|
2
23
13
dB
I
C
= 250 mA
I
C
= 250 mA
Minimum Noise Figure
Minimum noise figure
NF
min
2.5
dB Z
S
= Z
Sopt
I
C
= 70 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
27
38.5
dBm Z
L
= Z
Lopt
I
C
= 250 mA
I
C
= 250 mA
Table 8 AC Characteristics, V
CE
= 5 V, f = 1.8 GHz
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
G
ms
|S
21
|
2
18.5
7.5
dB
I
C
= 250 mA
I
C
= 250 mA
Minimum Noise Figure
Minimum noise figure
NF
min
2.6
dB Z
S
= Z
Sopt
I
C
= 70 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
27
38.5
dBm Z
L
= Z
Lopt
I
C
= 250 mA
I
C
= 250 mA
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Preliminary Datasheet 7 Revision 2.0
2017-02-16
Table 9 AC Characteristics, V
CE
= 5 V, f = 2.6 GHz
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
G
ms
|S
21
|
2
16
5.5
dB
I
C
= 250 mA
I
C
= 250 mA
Minimum Noise Figure
Minimum noise figure
NF
min
3.0
dB Z
S
= Z
Sopt
I
C
= 70 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
27
38.5
dBm Z
L
= Z
Lopt
I
C
= 250 mA
I
C
= 250 mA
Table 10 AC Characteristics, V
CE
= 5 V, f = 3.5 GHz
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
G
ms
|S
21
|
2
13
3
dB
I
C
= 250 mA
I
C
= 250 mA
Minimum Noise Figure
Minimum noise figure
NF
min
3.4
dB Z
S
= Z
Sopt
I
C
= 70 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
27
38.5
dBm Z
L
= Z
Lopt
I
C
= 250 mA
I
C
= 250 mA
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Preliminary Datasheet 8 Revision 2.0
2017-02-16
4.3 Characteristic DC Diagrams
0 1 2 3 4 5 6 7
0
50
100
150
200
250
300
350
400
450
500
V
CE
[V]
I
C
[mA]
0mA
0.75mA
1.5mA
2.25mA
3mA
3.75mA
4.5mA
5.25mA
6mA
Figure 3 Collector Current I
C
vs. V
CE
, I
B
= Parameter
Note: Regard absolute maximum ratings for I
C
, V
CE
and P
diss
10
0
10
1
10
2
10
3
10
1
10
2
10
3
I
c
[mA]
h
FE
Figure 4 DC Current Gain h
FE
vs. I
C
at V
CE
= 5 V
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Preliminary Datasheet 9 Revision 2.0
2017-02-16

BFQ790H6327XTSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors RF BIP TRANSISTORS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet