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BFQ790H6327XTSA1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
2 Recommended Operating Conditions
This following table shows examples of recommended operating conditions. As long as maximum ratings are
regarded operation outside these conditions is permitted, but increases failure rate and reduces lifetime. For
further information refer to the quality report available on the BFQ790 internet page.
Table 3 Recommended Operating Conditions
Operating
Mode
Ambient
Temperat
ure
1)
Collector
Current
DC
Power
2)
RF Output
Power
3)
Eiciency
4)
Dissipate
d Power
5)
Thermal
Resistanc
e of pcb
6)
Junction
Temperat
ure
7)
T
A
[°C]
I
C
[mA]
P
DC
[mW]
P
RFout
[mW]
(dBm)
η
[%]
P
diss
[mW]
R
THSA
[K/W]
T
J
[°C]
Compressi
on
55 250 1250 500 (27) 40 750 45 110
Final stage 55 200 1000 250 (24) 25 750 45 110
High T
A
85 120 600 50 (17) 8.5 550 20 110
Maximum
T
A
105 50 250 100 (20) 40 150 30 110
Linear 55 150 750 50 (17) 7 700 50 110
Very Linear 55 250 1250 50 (17) 4 1200 20 110
1
Is the operating case temperature respectively of the heatsink.
2
P
DC
= V
CE
* I
C
with V
CE
= 5 V.
3
RF power delivered to the load, P
RFout
= η * P
DC
.
4
Eiciency of the conversion from DC power to RF power, η = P
RFout
/ P
DC
(collector eiciency).
5
P
diss
= P
DC
- P
RFout
. The RF output power P
RFout
delivered to the load reduces the power P
diss
to be
dissipated by the device. This means a good output match is recommended.
6
R
THSA
is the thermal resistance of the pcb including heat sink, that is between the soldering point S and
the ambient A. Regard the impact of R
THSA
on the junction temperature T
J
, see below. The thermal design
of the pcb, respectively R
THSA
, has to be adjusted to the intended operating mode.
7
T
J
= T
A
+ P
diss
* R
THJA
. R
THJA
= R
THJS
+ R
THSA
. R
THJA
is the thermal resistance between the transistor junction
J and the ambient A. R
THJS
is the combined thermal resistance of die and package, which is 25 K/W for the
BFQ790,, see Chapter 3.
BFQ790
High Linearity RF Medium Power Amplifier
Recommended Operating Conditions
Preliminary Datasheet 4 Revision 2.0
2017-02-16
3 Thermal Characteristics
Table 4 Thermal Resistance
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Junction - soldering point R
thJS
– 25 – K/W –
Figure 1 Absolute Maximum Power Dissipation P
diss,max
vs. T
s
Note: In the horizontal part of the derating curve the maximum power dissipation is given
by P
diss,max
≈ V
CE,max
* I
C,max
. In this part the junction temperature T
J
is lower than T
J,max
. In the
declining slope it is T
J
= T
J,max
, P
diss,max
has to be reduced according to the curve in order not to
exceed T
J,max
. It is T
J,max
= T
S
+ P
diss,max
* R
THJS
.
BFQ790
High Linearity RF Medium Power Amplifier
Thermal Characteristics
Preliminary Datasheet 5 Revision 2.0
2017-02-16
4 Electrical Performance in Test Fixture
4.1 DC Parameter Table
Table 5 DC Characteristics at T
A
= 25 °C
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V
(BR)CEO
6.1 6.7 – V I
C
= 1 mA, open base
Collector emitter leakage current I
CES
–
–
1
0.1
40
1)
3
nA
μA
V
CE
= 8 V, V
BE
= 0 V
V
CE
= 18 V, V
BE
= 0 V
E-B short circuited
Collector base leakage current I
CBO
– 1 40
1)
nA V
CB
= 8 V, I
E
= 0
Open emitter
Emitter base leakage current I
EBO
– 1 40
1)
μA V
EB
= 0.5 V, I
C
= 0
Open collector
DC current gain h
FE
60 120 180 V
CE
= 5 V, I
C
= 250 mA
Pulse measured
2)
4.2 AC Parameter Tables
Table 6 General AC Characteristics at T
A
= 25 °C
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Transition frequency f
T
– 20 – GHz V
CE
= 5 V, I
C
= 250 mA,
f = 0.5 GHz
Collector base capacitance C
CB
– 1.1 – pF V
CB
= 5 V, V
BE
= 0 V,
f = 1 MHz
Emitter grounded
Collector emitter capacitance C
CE
– 2.2 – pF V
CE
= 5 V, V
BE
= 0 V,
f = 1 MHz
Base grounded
Emitter base capacitance C
EB
– 9.4 – pF V
EB
= 0.5 V, V
CB
= 0 V,
f = 1 MHz
Collector grounded
1
Upper spec value limited by the cycle time of the 100% test.
2
Pulse width is 1 ms, duty cycle 10%. Regard that the current gain h
FE
depends on the junction temperature
T
J
and T
J
amongst others from the thermal resistance R
THSA
of the pcb, see notes to Table 3. Hence the h
FE
specified in this datasheet must not be the same as in the application. It is highly recommended to apply
circuit design techniques to make the collector current I
C
independent on the h
FE
production variation
and temperature eects.
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Preliminary Datasheet 6 Revision 2.0
2017-02-16
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

BFQ790H6327XTSA1

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Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors RF BIP TRANSISTORS
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