Table 1: 180-Ball FBGA Ball Descriptions
Symbol Type Description
CK_t,
CK_c
Input Clock: CK_t and CK_c are differential clock inputs. CK_t and CK_c do not have chan-
nel indicators as one clock is shared between both channel A and channel B on a de-
vice. Command address (CA) inputs are latched on the rising and falling edge of CK.
All latencies are referenced to CK.
WCK_t,
WCK_c
Input Write clock: WCK_t and WCK_c are differential clocks used for write data capture
and read data output. WCK_t/WCK_c are associated with DQ[15:0], DBI[1:0]_n, and
EDC[1:0].
CKE_n Input Clock enable: CKE_n LOW activates and CKE_n HIGH deactivates the internal clock,
device input buffers, and output drivers excluding RESET_n, TDI, TDO, TMS, and TCK.
Taking CKE_n HIGH provides PRECHARGE POWER-DOWN and SELF REFRESH opera-
tions (all banks idle), or ACTIVE POWER-DOWN (row ACTIVE in any bank). CKE_n
must be maintained LOW throughout read and write accesses.
CA[9:0] Input Command address (CA): The CA inputs receive packetized DDR command, address
or other information, for example, the op-code for the MRS command. See Com-
mand Truth Table for details.
CABI_n Input Command address bus inversion
DQ[15:0] I/O Data input/output: Bidirectional 16-bit data bus.
DBI[1:0]_n I/O Data bus inversion: DBI0_n is associated with DQ[7:0], DBI1_n is associated with
DQ[15:8].
EDC[1:0] Output Error detection code: The calculated CRC data is transmitted on these signals. In
addition these signals drive a "hold" pattern when idle. EDC0 is associated with
DQ[7:0], EDC1 is associated with DQ[15:8].
V
DDQ
Supply I/O power supply: Isolated on the die for improved noise immunity.
V
DD
Supply Power supply
V
SS
Supply Ground
V
PP
Supply Pump voltage
V
REFC
Supply Reference voltage for CA, CABI_n, and CKE_n signals
ZQ Reference External reference for auto calibration
TDI Input JTAG test data input
TDO Output JTAG test data output
TMS Input JTAG test mode select
TCK Input JTAG test clock
RESET_n Input Reset: RESET_n low asynchronously initiates a full chip reset. With RESET_n LOW all
ODTs are disabled. A full chip reset may be performed at any time by pulling RE-
SET_n LOW.
NC No connect
Note:
1. Index "_A" or "_B" represents the channel indicator "A" and "B" of the device. Signal
names including the channel indicator are used whenever more than one channel is ref-
erenced, for example, with the ball assignment. The channel indicator is omitted when-
ever features and functions common to both channels are described.
8Gb: 2 Channels x16/x8 GDDR6 SGRAM
Ball Assignments and Descriptions
CCMTD-1412786195-10191
gddr6_sgram_8gb_brief.pdf - Rev. F 8/18 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Package Dimensions
Figure 3: 180-Ball FBGA (JE)
E
F
G
0.6 CTR
nonconductive
overmold
0.12
Seating plane
0.1 A
Ball A1 ID
(covered by SR)
Ball A1 ID
A
0.34 ±0.05
1.1 ±0.1
9.75 CTR
12 ±0.1
0.75 TYP
12.75 CTR
14 ±0.1
180X Ø0.47
Dimensions apply
to solder balls post-
reflow on Ø0.42 SMD
ball pads.
0.75 TYP
123101112
A
B
C
D
H
J
K
L
M
N
P
R
T
U
V
451314
Notes:
1. Package dimension specification is compliant to JC11 MO328 variation P14.0x12.0-
GJ-180A.
2. All dimensions are in millimeters.
3. Solder ball material: SAC-Q (92.5% Sn, 4% Ag, 3% Bi, 0.5% Cu).
8Gb: 2 Channels x16/x8 GDDR6 SGRAM
Package Dimensions
CCMTD-1412786195-10191
gddr6_sgram_8gb_brief.pdf - Rev. F 8/18 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Functional Description
The GDDR6 SGRAM is a high-speed dynamic random-access memory designed for ap-
plications requiring high bandwidth. It is internally configured as 16bank memory and
contains 8,589,934,592 bits.
The GDDR6 SGRAM’s high-speed interface is optimized for point-to-point connections
to a host controller. On-die termination (ODT) is provided for all high-speed interface
signals to eliminate the need for termination resistors in the system.
GDDR6 uses a 16n-prefetch architecture and a DDR or QDR interface to achieve high-
speed operation. The device’s architecture consists of two 16-bit-wide fully independ-
ent channels.
Read and write accesses to GDDR6 are burst oriented; accesses start at a selected loca-
tion and consist of a total of 16 data words. Accesses begin with the registration of an
ACTIVATE command, which is then followed by a READ, WRITE (WOM), or masked
WRITE (WDM, WSM) command. The row and bank address to be accessed is registered
coincident with the ACTIVATE command. The address bits registered coincident with
the READ, WRITE, or masked WRITE command are used to select the bank and the
starting column location for the burst access.
Clocking
GDDR6 operates from a differential clock CK_t and CK_c. CK is common to both chan-
nels. Command and address (CA) are registered at every rising and falling CK edge.
There are both single-cycle and multi-cycle commands. See Command Truth Table for
details.
GDDR6 uses a free running differential forwarded clock (WCK_t/WCK_c) with both in-
put and output data registered and driven respectively at both edges of the forwarded
WCK.
GDDR6 supports DDR and QDR operating modes for WCK frequency which differ in
the DQ/DBI_n pin to WCK clock frequency ratio. The figure below illustrates the differ-
ence between both modes.
This GDDR6 SGRAM device is designed with a WCK/word granularity which is equiva-
lent to one WCK per channel. The DRAM info bits for WCK granularity, WCK frequency,
and internal WCK can be read by the host during the initialization process to determine
the WCK architecture for the device.
Table 2: Example Clock and Interface Signal Frequency Relationship
Pin DDR WCK QDR WCK Unit
CK_t, CK_c 1.5 1.5 GHz
CA 3.0 3.0 Gb/s/pin
WCK_t, WCK_c 6.0 3.0 GHz
DQ, DBI_n 12.0 12.0 Gb/s/pin
EDC 6.0 6.0 Gb/s/pin
8Gb: 2 Channels x16/x8 GDDR6 SGRAM
Functional Description
CCMTD-1412786195-10191
gddr6_sgram_8gb_brief.pdf - Rev. F 8/18 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.

MT61K256M32JE-14:A

Mfr. #:
Manufacturer:
Micron
Description:
DRAM GDDR6 8G 256MX32 FBGA
Lifecycle:
New from this manufacturer.
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