Electrical Specifications
MC13853 Technical Data, Rev. 1.8
4 Freescale Semiconductor
Bypass Gain G -10 -9.5 – dB
Bypass Input Third Order Intercept Point IIP3 16 22 – dBm
Bypass Current – 10 20 µA
950 MHz (Refer to Figure 5)
Frequency f 925 950 960 MHz
Active Gain G 11.0 12.0 13.0 dB
Active Noise Figure NF – 1.45 1.5 dB
Active Input Third Order Intercept Point IIP3 -3 -2.5 – dBm
Active Input 1 dB Compression Point P
1dB
-9 -8.5 – dBm
Active Current @ 2.75 V in current setting 6 I
CC
– 8.6 10.2 mA
Bypass Gain G -10 -9.5 – dB
Bypass Input Third Order Intercept Point IIP3 16 22 – dBm
Bypass Current – 10 20 µA
1850 MHz (Refer to Figure 6)
Frequency f 1805 1850 1880 MHz
Active Gain G 12.5 13.5 14.5 dB
Active Noise Figure NF – 1.55 1.6 dB
Active Input Third Order Intercept Point IIP3 -3 -2.5 – dBm
Active Input 1 dB Compression Point P
1dB
-12.5 -11.7 – dBm
Active Current @ 2.75 V in current setting 6 I
CC
–7.89.7mA
Bypass Gain G -9.5 -9 – dB
Bypass Input Third Order Intercept Point IIP3 16 22 – dBm
Bypass Current – 10 20 µA
1960 MHz (Refer to Figure 7)
Frequency f 1930 1960 1990 MHz
Active Gain G 12.5 13.5 14.5 dB
Active Noise Figure NF – 1.55 1.6 dB
Active Input Third Order Intercept Point IIP3 -3 -2.5 – dBm
Active Input 1 dB Compression Point P
1dB
-12.5 -12 – dBm
Active Current @ 2.75 V in current setting 6 I
CC
–7.89.7mA
Bypass Gain G -9.5 -9 – dB
Bypass Input Third Order Intercept Point IIP3 20 22 – dBm
Bypass Current – 10 20 µA
Table 3. Electrical Characteristics in Frequency Specific Tuned Circuits (continued)
(V
CC
= 2.775 V, 25°C)
Characteristic Symbol Minimum Typical Maximum Unit
