Ball Assignments
Figure 1: 96-Ball x16 SR DDP Ball Assignments
1 2 3 4 6 7 8 95
V
DDQ
V
PP
V
DDQ
V
DD
V
SS
V
SSQ
V
DDQ
V
SSQ
V
DD
V
SS
V
DD
V
REFCA
V
SS
RESET_n
V
DD
V
SS
V
SS
V
SSQ
V
SS
UDQ4
V
SSQ
V
DDQ
LDQ0
LDQ4
V
DDQ
CKE
WE_n/A14
BG0 BG1
BA0
A6
A8
A11
UDQ0
V
DD
UDQ2
UDQ6
V
SSQ
LDQS_c
LDQS_t
LDQ2
LDQ6
ODT
ACT_n
A10/AP
A4
A0
A2
PAR
UDQS_c
UDQS_t
UDQ3
UDQ7
LDQ1
V
DD
LDQ3
LDQ7
CK_t
CS_n
A12/BC_n
A3
A1
A9
V
SSQ
UDQ1
UDQ5
V
SSQ
V
SSQ
V
DDQ
V
SS
LDQ5
V
DDQ
CK_c
RAS_n/A16
CAS-n/A15
BA1
A5
A7
A13
V
DDQ
V
DD
V
SSQ
V
DDQ
V
DDQ
UZQ
LZQ
V
SSQ
V
DD
V
SS
V
DD
TEN
V
PP
V
DD
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
NF/LDM_n/
LDBI_n
ALERT_n
NF/UDM_n/
UDBI_n
Notes:
1. See Ball Descriptions in the monolithic data sheet.
2. A slash “/” defines a selectable function. For example: Ball E2 = NF/UDM_n/UDBI_n
where either NF, UDM_n, or UDBI_n is defined via MRS.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Ball Assignments
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Functional Block Diagrams
Figure 2: Functional Block Diagram (128 Meg x 16 x 16 Banks x 1 Rank)
ACT_n
CAS_n/A15
RAS_n/A16
WE_n/A14
PAR
VrefCA
CK_t
CK_c
LDQ[7:0]
LDQS_t
LDQS_c
A[13:0]
BA[1:0]
BG[1:0]
Byte 0
(64 Meg x 8 x 16 banks)
Byte 1
(64 Meg x 8 x 16 banks)
(128 Meg x 16 x 16 banks)
CS_n
CKE
ODT
UZQ
LZQ
UDM_n/
UDBI_n
LDM_n/
LDBI_n
TEN
RESET_n
ALERT_n
UDQ[7:0]
UDQS_t
UDQS_c
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Functional Block Diagrams
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Connectivity Test Mode
Connectivity test (CT) mode for the x16 TwinDie single rank (SR) device is the same as
two mono x8 devices connected in parallel. The mapping is restated for clarity.
Minimum Terms Definition for Logic Equations
The test input and output pins are related by the following equations, where INV de-
notes a logical inversion operation and XOR a logical exclusive OR operation:
MT0 = XOR (A1, A6, PAR)
MT1 = XOR (A8, ALERT_n, A9)
MT2 = XOR (A2, A5, A13)
MT3 = XOR (A0, A7, A11)
MT4 = XOR (CK_c, ODT, CAS_n/A15)
MT5 = XOR (CKE, RAS_n/A16, A10/AP)
MT6 = XOR (ACT_n, A4, BA1)
MT7L = XOR (BG1, LDM_n/LDBI_n, CK_t)
MT7U = XOR (BG1, UDM_n/UDBI_n, CK_t)
MT8 = XOR (WE_n/A14, A12 / BC, BA0)
MT9 = XOR (BG0, A3, RESET_n and TEN)
Logic Equations for a x16 TwinDie, SR Device
Byte 0
Byte 1
LDQ0 = MT0 UDQ0 = MT0
LDQ1 = MT1 UDQ1 = MT1
LDQ2 = MT2 UDQ2 = MT2
LDQ3 = MT3 UDQ3 = MT3
LDQ4 = MT4 UDQ4 = MT4
LDQ5 = MT5 UDQ5 = MT5
LDQ6 = MT6 UDQ6 = MT6
LDQ7 = MT7L UDQ7 = MT7U
LDQS_t = MT8 UDQS_t = MT8
LDQS_c = MT9 UDQS_c = MT9
x16 TwinDie, SR Internal Connections
The figure below shows the internal connections of the x16 TwinDie, SR. The diagram
shows why byte 0 and byte 1 outputs have the same logic equations except LDQ7 and
UDQ7; they are different because the DM_n/DBI_n pins are not common for each byte.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Connectivity Test Mode
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

MT40A1G16WBU-075E:B

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 16G PARALLEL 1.33GHZ
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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