Figure 3: x16 TwinDie, SR
ACT_n
CAS_n/A15
RAS_n/A16
WE_n/A14
PAR
V
REFCA
CK_t
CK_c
LDQ[7:0]
LDQS_t
LDQS_c
A[13:0]
BA[1:0]
BG[1:0]
Byte 1
CS_n
CKE
ODT
UZQ
LZQ
UDM_n/
UDBI_n
LDM_n/
LDBI_n
TEN
RESET_n
ALERT_n
UDQ[7:0]
UDQS_t
UDQS_c
Byte 0
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Connectivity Test Mode
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Electrical Specifications – Leakages
Table 3: Input and Output Leakages
Symbol Parameter Min Max Units Notes
I
I
Input leakage current
Any input 0V V
IN
V
DD
,
V
REF
pin 0V V
IN
1.1V
(All other pins not under test = 0V)
–4 4 µA 1
I
VREF
V
REF
supply leakage current
V
REFDQ
= V
DD
/2 or V
REFCA
= V
DD
/2
(All other pins not under test = 0V)
–4 4 µA 2
I
ZQ
Input leakage on ZQ pin –50 10 µA
I
TEN
Input leakage on TEN pin –12 20 µA
I
OZPD
Output leakage: V
OUT
= V
DDQ
10 µA 3
I
OZPU
Output leakage: V
OUT
= V
SSQ
–50 µA 3, 4
Notes:
1. Any input 0V < Vin < 1.1V
2. V
REFCA
= V
DD
/2, V
DD
at valid level.
3. DQs are disabled.
4. ODT is disabled with the ODT input HIGH.
Temperature and Thermal Impedance
It is imperative that the DDR4 SDRAM device’s temperature specifications, shown in
the following table, be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in main-
taining the proper junction temperature is using the device’s thermal impedances cor-
rectly. The thermal impedances listed in Table 5 (page 9) apply to the current die re-
vision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron
technical note TN-00-08, “Thermal Applications,” prior to using the values listed in the
thermal impedance table. For designs that are expected to last several years and require
the flexibility to use several DRAM die shrinks, consider using final target theta values
(rather than existing values) to account for increased thermal impedances from the die
size reduction.
The DDR4 SDRAM device’s safe junction temperature range can be maintained when
the T
C
specification is not exceeded. In applications where the device’s ambient tem-
perature is too high, use of forced air and/or heat sinks may be required to satisfy the
case temperature specifications.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Electrical Specifications – Leakages
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 4: Thermal Characteristics
Notes 1–3 apply to entire table
Parameter Symbol Value Units Notes
Operating temperature T
C
0 to 85 °C
0 to 95 °C 4
Notes:
1. MAX operating case temperature T
C
is measured in the center of the package, as shown
below.
2. A thermal solution must be designed to ensure that the device does not exceed the
maximum T
C
during operation.
3. Device functionality is not guaranteed if the device exceeds maximum T
C
during
operation.
4. If T
C
exceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9µs
interval refresh rate. The use of self refresh temperature (SRT) or automatic self refresh
(ASR), if available, must be enabled.
Figure 4: Temperature Test Point Location
Test point
Length (L)
Width (W)
0.5 (W)
0.5 (L)
Table 5: Thermal Impedance
Die Rev.
Substrate
conductivity
Θ JA (°C/W)
Airflow =
0m/s
Θ JA (°C/W)
Airflow =
1m/s
Θ JA (°C/W)
Airflow =
2m/s Θ JB (°C/W) Θ JC (°C/W) Notes
A
Low TBD TBD TBD N/A TBD
1
High TBD TBD TBD TBD N/A
B, D
Low 43.9 33.0 29.5 N/A 3.3
1
High 27.1 21.7 20.1 10.5 N/A
E
Low TBD TBD TBD N/A TBD
1
High TBD TBD TBD TBD N/A
Note:
1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Electrical Specifications – Leakages
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

MT40A1G16WBU-075E:B

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 16G PARALLEL 1.33GHZ
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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