Document Number: 38-05283 Rev. *P Page 10 of 25
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Supply Voltage on V
DD
Relative to GND .....–0.3 V to +4.6 V
Supply Voltage on V
DDQ
Relative to GND .... –0.3 V to +V
DD
DC Voltage Applied to Outputs
in Tri-State ........................................–0.5 V to V
DDQ
+ 0.5 V
DC Input Voltage ................................–0.5 V to V
DD
+ 0.5 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(MIL-STD-883, Method 3015) .................................> 2001 V
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Ambient
Temperature
V
DD
V
DDQ
Commercial 0 C to +70 C3.3 V– 5% /
+ 10%
2.5 V – 5% to
V
DD
Electrical Characteristics
Over the Operating Range
Parameter
[10, 11]
Description Test Conditions Min Max Unit
V
DD
Power Supply Voltage 3.135 3.6 V
V
DDQ
I/O Supply Voltage For 3.3 V I/O 3.135 V
DD
V
For 2.5 V I/O 2.375 2.625 V
V
OH
Output HIGH Voltage For 3.3 V I/O, I
OH
= –4.0 mA 2.4 – V
For 2.5 V I/O, I
OH
= –1.0 mA 2.0 – V
V
OL
Output LOW Voltage For 3.3 V I/O, I
OL
= 8.0 mA – 0.4 V
For 2.5 V I/O, I
OL
= 1.0 mA – 0.4 V
V
IH
Input HIGH Voltage
[10]
For 3.3 V I/O 2.0 V
DD
+ 0.3 V V
For 2.5 V I/O 1.7 V
DD
+ 0.3 V V
V
IL
Input LOW Voltage
[10]
For 3.3 V I/O –0.3 0.8 V
For 2.5 V I/O –0.3 0.7 V
I
X
Input Leakage Current except ZZ
and MODE
GND V
I
V
DDQ
–5 5 A
Input Current of MODE Input = V
SS
–30 – A
Input = V
DD
–5A
Input Current of ZZ Input = V
SS
–5 – A
Input = V
DD
–30A
I
OZ
Output Leakage Current GND V
I
V
DDQ,
Output Disabled –5 5 A
I
DD
V
DD
Operating Supply Current V
DD
= Max, I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
5.0-ns cycle,
200 MHz
–500mA
6.0-ns cycle,
167 MHz
–450mA
I
SB1
Automatic CE Power Down
Current – TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
,
f = f
MAX
= 1/t
CYC
5.0-ns cycle,
200 MHz
–245mA
6.0-ns cycle,
167 MHz
–245mA
I
SB2
Automatic CE Power Down
Current – CMOS Inputs
V
DD
= Max, Device Deselected,
V
IN
0.3 V or V
IN
> V
DDQ
– 0.3 V,
f = 0
All speeds – 120 mA
Notes
10. Overshoot: V
IH(AC)
< V
DD
+1.5 V (Pulse width less than t
CYC
/2). Undershoot: V
IL(AC)
> –2V (Pulse width less than t
CYC
/2).
11. Power up: Assumes a linear ramp from 0 V to V
DD(min.)
within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
