CY7C1480V33
Document Number: 38-05283 Rev. *P Page 13 of 25
Switching Characteristics
Over the Operating Range
Parameter
[13, 14]
Description
200 MHz 167 MHz
Unit
Min Max Min Max
t
POWER
V
DD
(Typical) to the First Access
[15]
1–1–ms
Clock
t
CYC
Clock Cycle Time 5.0 6.0 ns
t
CH
Clock HIGH 2.0 2.4 ns
t
CL
Clock LOW 2.0 2.4 ns
Output Times
t
CO
Data Output Valid After CLK Rise 3.0 3.4 ns
t
DOH
Data Output Hold After CLK Rise 1.3 1.5 ns
t
CLZ
Clock to Low Z
[16, 17, 18]
1.3–1.5–ns
t
CHZ
Clock to High Z
[16, 17, 18]
3.0 3.4 ns
t
OEV
OE LOW to Output Valid 3.0 3.4 ns
t
OELZ
OE LOW to Output Low Z
[16, 17, 18]
0–0–ns
t
OEHZ
OE HIGH to Output High Z
[16, 17, 18]
3.0 3.4 ns
Setup Times
t
AS
Address Setup Before CLK Rise 1.4 1.5 ns
t
ADS
ADSC, ADSP Setup Before CLK Rise 1.4 1.5 ns
t
ADVS
ADV Setup Before CLK Rise 1.4 1.5 ns
t
WES
GW, BWE, BW
X
Setup Before CLK Rise 1.4 1.5 ns
t
DS
Data Input Setup Before CLK Rise 1.4 1.5 ns
t
CES
Chip Enable Setup Before CLK Rise 1.4 1.5 ns
Hold Times
t
AH
Address Hold After CLK Rise 0.4 0.5 ns
t
ADH
ADSP, ADSC Hold After CLK Rise 0.4 0.5 ns
t
ADVH
ADV Hold After CLK Rise 0.4 0.5 ns
t
WEH
GW, BWE, BW
X
Hold After CLK Rise 0.4 0.5 ns
t
DH
Data Input Hold After CLK Rise 0.4 0.5 ns
t
CEH
Chip Enable Hold After CLK Rise 0.4 0.5 ns
Notes
13. Timing reference level is 1.5 V when V
DDQ
= 3.3 V and is 1.25 V when V
DDQ
= 2.5 V.
14. Test conditions shown in (a) of Figure 2 on page 12 unless otherwise noted.
15. This part has an internal voltage regulator; t
POWER
is the time that the power needs to be supplied above V
DD(minimum)
initially before a read or write operation can
be initiated.
16. t
CHZ
, t
CLZ
, t
OELZ
, and t
OEHZ
are specified with AC test conditions shown in part (b) of Figure 2 on page 12. Transition is measured ±200 mV from steady-state voltage.
17. At any possible voltage and temperature, t
OEHZ
is less than t
OELZ
and t
CHZ
is less than t
CLZ
to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to
achieve High-Z before Low-Z under the same system conditions.
18. This parameter is sampled and not 100% tested.
CY7C1480V33
Document Number: 38-05283 Rev. *P Page 14 of 25
Switching Waveforms
Figure 3. Read Cycle Timing
[19]
t
CYC
t
CL
CLK
ADSP
t
ADH
t
ADS
ADDRESS
t
CH
OE
ADSC
CE
t
AH
t
AS
A1
t
CEH
t
CES
GW, BWE,
BWx
D
ata Out (Q)
High-Z
t
CLZ
t
DOH
t
CO
ADV
t
OEHZ
t
CO
Single READ BURST READ
t
OEV
t
OELZ
t
CHZ
ADV
suspends
burst.
Burst wraps around
to its initial state
t
ADVH
t
ADVS
t
WEH
t
WES
t
ADH
t
ADS
Q(A2) Q(A2 + 1) Q(A2 + 2)
Q(A1)
Q(A2) Q(A2 + 1)Q(A2 + 3)
A2 A3
Deselect
cycle
Burst continued with
new base address
DON’T CARE
UNDEFINED
Note
19. On this diagram, when CE
is LOW: CE
1
is LOW, CE
2
is HIGH and CE
3
is LOW. When CE is HIGH: CE
1
is HIGH, CE
2
is LOW, or CE
3
is HIGH.
CY7C1480V33
Document Number: 38-05283 Rev. *P Page 15 of 25
Figure 4. Write Cycle Timing
[20, 21]
Switching Waveforms (continued)
t
CYC
t
CL
CLK
ADSP
t
ADH
t
ADS
ADDRESS
t
CH
OE
ADSC
CE
t
AH
t
AS
A1
t
CEH
t
CES
BWE,
BW
X
D
ata Out (Q)
High-Z
ADV
BURST READ BURST WRITE
D(A2) D(A2 + 1) D(A2 + 1)
D(A1)
D(A3) D(A3 + 1) D(A3 + 2)D(A2 + 3)
A2 A3
Data In (D)
Extended BURST WRITE
D(A2 + 2)
Single WRITE
t
ADH
t
ADS
t
ADH
t
ADS
t
OEHZ
t
ADVH
t
ADVS
t
WEH
t
WES
t
DH
t
DS
GW
t
WEH
t
WES
Byte write signals are
ignored for rst cycle when
ADSP initiates burst
ADSC extends burst
ADV suspends burst
DON’T CARE
UNDEFINED
Notes
20. On this diagram, when CE
is LOW: CE
1
is LOW, CE
2
is HIGH and CE
3
is LOW. When CE is HIGH: CE
1
is HIGH, CE
2
is LOW, or CE
3
is HIGH.
21.
Full width write can be initiated by either GW
LOW; or by GW HIGH, BWE LOW, and BW
X
LOW.

CY7C1480V33-200AXC

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 72MB (2Mx36) 3.3v 200MHz Sync SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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