CY7C1480V33
Document Number: 38-05283 Rev. *P Page 7 of 25
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following conditions
are satisfied: (1) ADSC is asserted LOW, (2) ADSP
is deasserted
HIGH, (3) CE
1
, CE
2
, CE
3
are all asserted active, and (4) the
appropriate combination of the Write inputs (GW
, BWE, and
BW
X
) are asserted active to conduct a Write to the desired
byte(s). ADSC
-triggered Write accesses require a single clock
cycle to complete. The address presented to A is loaded into the
address register and the address advancement logic while being
delivered to the memory array. The ADV
input is ignored during
this cycle. If a global Write is conducted, the data presented to
the DQs is written into the corresponding address location in the
memory core. If a Byte Write is conducted, only the selected
bytes are written. Bytes not selected during a Byte Write
operation will remain unaltered. A synchronous self-timed Write
mechanism has been provided to simplify the Write operations.
Because CY7C1480V33 is a common I/O device, the Output
Enable (OE
) must be deasserted HIGH before presenting data
to the DQs inputs. Doing so will tri-state the output drivers. As a
safety precaution, DQs are automatically tri-stated whenever a
Write cycle is detected, regardless of the state of OE
.
Burst Sequences
The CY7C1480V33 provides a two-bit wraparound counter, fed
by A1:A0, that implements either an interleaved or linear burst
sequence. The interleaved burst sequence is designed
specifically to support Intel Pentium applications. The linear
burst sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user selectable
through the MODE input.
Asserting ADV
LOW at clock rise will automatically increment the
burst counter to the next address in the burst sequence. Both
Read and Write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered valid
nor is the completion of the operation guaranteed. The device
must be deselected before entering the “sleep” mode. CE
1
, CE
2
,
CE
3
, ADSP, and ADSC must remain inactive for the duration of
t
ZZREC
after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or V
DD
)
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00
Linear Burst Address Table
(MODE = GND)
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00 01 10 11
01 10 11 00
10 11 00 01
11 00 01 10
ZZ Mode Electrical Characteristics
Parameter Description Test Conditions Min Max Unit
I
DDZZ
Sleep mode standby current ZZ > V
DD
– 0.2 V 120 mA
t
ZZS
Device operation to ZZ ZZ > V
DD
– 0.2 V 2t
CYC
ns
t
ZZREC
ZZ recovery time ZZ < 0.2 V 2t
CYC
–ns
t
ZZI
ZZ Active to Sleep current This parameter is sampled 2t
CYC
ns
t
RZZI
ZZ Inactive to exit Sleep current This parameter is sampled 0 ns
CY7C1480V33
Document Number: 38-05283 Rev. *P Page 8 of 25
Truth Table
The Truth Table for CY7C1480V33 follows.
[4, 5, 6, 7, 8]
Operation Add. Used CE
1
CE
2
CE
3
ZZ ADSP ADSC ADV WRITE OE CLK DQ
Deselect Cycle, Power Down None H X X L X L X X X L–H Tri-State
Deselect Cycle, Power Down None L L X L L X X X X L–H Tri-State
Deselect Cycle, Power Down None L X H L L X X X X L–H Tri-State
Deselect Cycle, Power Down None L L X L H L X X X L–H Tri-State
Deselect Cycle, Power Down None L X H L H L X X X L–H Tri-State
Sleep Mode, Power Down None X X X H X X X X X X Tri-State
READ Cycle, Begin Burst External L H L L L X X X L L–H Q
READ Cycle, Begin Burst External L H L L L X X X H L–H Tri-State
WRITE Cycle, Begin Burst External L H L L H L X L X L–H D
READ Cycle, Begin Burst External L H L L H L X H L L–H Q
READ Cycle, Begin Burst External L H L L H L X H H L–H Tri-State
READ Cycle, Continue Burst Next X X X L H H L H L L–H Q
READ Cycle, Continue Burst Next X X X L H H L H H L–H Tri-State
READ Cycle, Continue Burst Next H X X L X H L H L L–H Q
READ Cycle, Continue Burst Next H X X L X H L H H L–H Tri-State
WRITE Cycle, Continue Burst Next X X X L H H L L X L–H D
WRITE Cycle, Continue Burst Next H X X L X H L L X L–H D
READ Cycle, Suspend Burst Current X X X L H H H H L L–H Q
READ Cycle, Suspend Burst Current X X X L H H H H H L–H Tri-State
READ Cycle, Suspend Burst Current H X X L X H H H L L–H Q
READ Cycle, Suspend Burst Current H X X L X H H H H L–H Tri-State
WRITE Cycle,Suspend Burst Current X X X L H H H L X L–H D
WRITE Cycle,Suspend Burst Current H X X L X H H L X L–H D
CY7C1480V33
Document Number: 38-05283 Rev. *P Page 9 of 25
Truth Table for Read/Write
The following is a Truth Table for Read/Write for the CY7C1480V33.
[9]
Function GW BWE BW
D
BW
C
BW
B
BW
A
Read H H X X X X
Read HLHHHH
Write Byte A (DQ
A
and DQP
A
)HLHHHL
Write Byte B – (DQ
B
and DQP
B
)HLHHLH
Write Bytes B, A H L H H L L
Write Byte C – (DQ
C
and DQP
C
)HLHLHH
Write Bytes C, A H L H L H L
Write Bytes C, B H L H L L H
Write Bytes C, B, A H L H L L L
Write Byte D – (DQ
D
and DQP
D
)HLLHHH
Write Bytes D, A H L L H H L
Write Bytes D, B H L L H L H
Write Bytes D, B, A H L L H L L
Write Bytes D, C H L L L H H
Write Bytes D, C, A H L L L H L
Write Bytes D, C, B H L L L L H
Write All Bytes H L L L L L
Write All Bytes L X X X X X

CY7C1480V33-200AXC

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 72MB (2Mx36) 3.3v 200MHz Sync SRAM
Lifecycle:
New from this manufacturer.
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