BSC

BSC018NE2LS vs BSC018N04LSGXT vs BSC018N04LSGATMA1

 
PartNumberBSC018NE2LSBSC018N04LSGXTBSC018N04LSGATMA1
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8TDSON-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V40 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance1.8 mOhms1.5 mOhms-
Vgs th Gate Source Threshold Voltage2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge19 nC150 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W125 W-
ConfigurationSingleSingle-
TradenameOptiMOS-OptiMOS
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min140 S90 S-
Fall Time3.6 ns9 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time4.4 ns7.4 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns55 ns-
Typical Turn On Delay Time5.5 ns13 ns-
Part # AliasesBSC018NE2LSATMA1 BSC18NE2LSXT SP000756336BSC018N04LS BSC018N04LSGATMA1 G SP000388293BSC018N04LS BSC18N4LSGXT G SP000388293
Unit Weight0.004176 oz--
Channel Mode-Enhancement-
  • Start with
  • BSC 999
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC019N06NSATMA1 MOSFET DIFFERENTIATED MOSFETS
BSC018NE2LS MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC020N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC020N03LSGATMA1 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC019N04LS MOSFET DIFFERENTIATED MOSFETS
BSC019N04NS G MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC019N04LSATMA1 MOSFET MV POWER MOS
BSC018NE2LSI MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC019N02KS G MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018N04LSGXT MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC019N02KSGAUMA1 MOSFET N-CH 20V 100A TDSON-8
BSC019N04NSGATMA1 MOSFET N-CH 40V 100A TDSON-8
BSC020N025S G MOSFET N-CH 25V 100A TDSON-8
BSC020N03LSGATMA1 MOSFET N-CH 30V 100A TDSON-8
BSC019N04LSATMA1 MOSFET N-CH 40V 27A 8TDSON
BSC019N04LSTATMA1 DIFFERENTIATED MOSFETS
BSC019N06NSATMA1 DIFFERENTIATED MOSFETS
BSC018N04LSGATMA1 MOSFET N-CH 40V 100A TDSON-8
BSC018NE2LSIATMA1 MOSFET N-CH 25V 29A TDSON-8
BSC018NE2LSATMA1 MOSFET N-CH 25V 100A TDSON-8
Infineon Technologies
Infineon Technologies
BSC019N02KSGAUMA1 MOSFET LV POWER MOS
BSC018NE2LSATMA1 MOSFET LV POWER MOS
BSC019N02KSGXT/SAMPLE Trans MOSFET N-CH 20V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC019N02KSGAUMA1)
BSC018N04LSGXT MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018N04LSGATMA1 , TDA3 New and Original
BSC018NE2L New and Original
BSC018NE2LSG New and Original
BSC018NE2LSI Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC018NE2LSI BSC018NE2LS New and Original
BSC018NE2LSI QFN8 New and Original
BSC019N02KS New and Original
BSC019N02KSG New and Original
BSC019N04NS New and Original
BSC019N04NS G(SP00038829 New and Original
BSC019N04NS G) New and Original
BSC019N04NS3G New and Original
BSC019N04NSG Trans MOSFET N-CH 40V 29A 8-Pin TDSON (Alt: SP000388299)
BSC020N025S New and Original
BSC020N025SG New and Original
BSC020N02LS New and Original
BSC020N03LS New and Original
BSC020N03LS3G New and Original
BSC020N03LSG Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP
BSC020N03LSG,1N4148W T/R New and Original
BSC020N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC019N02KS G RF Bipolar Transistors MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC019N04NS G RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC018NE2LS RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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