PartNumber | BSC007N04LS6ATMA1 | BSC009NE2LS | BSC009NE2LS5ATMA1 |
Description | MOSFET | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 25 V | 25 V |
Id Continuous Drain Current | 100 A | 100 A | 100 A |
Rds On Drain Source Resistance | 700 uOhms | 1 mOhms | 1.25 mOhms |
Vgs th Gate Source Threshold Voltage | 1.3 V | 1 V | 1.2 V |
Vgs Gate Source Voltage | 20 V | 20 V | 16 V |
Qg Gate Charge | 94 nC | 168 nC | 20 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 188 W | 96 W | 74 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 300 S | 85 S | 75 S |
Fall Time | 13 ns | 19 ns | 4 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6 ns | 33 ns | 6 ns |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 40 ns | 48 ns | 30 ns |
Typical Turn On Delay Time | 8 ns | 10 ns | 4 ns |
Part # Aliases | SP001629650 | BSC009NE2LSATMA1 BSC9NE2LSXT SP000893362 | BSC009NE2LS5 SP001212764 |
Qualification | - | AEC-Q101 | - |
Tradename | - | OptiMOS | OptiMOS |
Height | - | 1.27 mm | 1.27 mm |
Length | - | 5.9 mm | 5.9 mm |
Width | - | 5.15 mm | 5.15 mm |
Unit Weight | - | 0.004090 oz | - |
Series | - | - | OptiMOS 5 |