BSC0

BSC018NE2LSI vs BSC018NE2LSIXT vs BSC018NE2LSIATMA1

 
PartNumberBSC018NE2LSIBSC018NE2LSIXTBSC018NE2LSIATMA1
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET N-CH 25V 29A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance1.5 mOhms1.5 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge48 nC48 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W69 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min65 S65 S-
Fall Time3.6 ns3.6 ns-
Product TypeMOSFETMOSFET-
Rise Time4.8 ns4.8 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns24 ns-
Typical Turn On Delay Time5.2 ns5.2 ns-
Part # AliasesBSC018NE2LSIATMA1 BSC18NE2LSIXT SP000906030BSC018NE2LSIATMA1 SP000906030-
Unit Weight0.004176 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC019N06NSATMA1 MOSFET DIFFERENTIATED MOSFETS
BSC020N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC020N03LSGATMA1 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC020N03MS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
BSC019N04LS MOSFET DIFFERENTIATED MOSFETS
BSC019N04NS G MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC020N03MSGATMA1 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
BSC019N04LSATMA1 MOSFET MV POWER MOS
BSC018NE2LSI MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC019N02KS G MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC020N03LSGXT MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2LSI Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC019N02KSGAUMA1 MOSFET N-CH 20V 100A TDSON-8
BSC019N04NSGATMA1 MOSFET N-CH 40V 100A TDSON-8
BSC020N025S G MOSFET N-CH 25V 100A TDSON-8
BSC020N03LSGATMA1 MOSFET N-CH 30V 100A TDSON-8
BSC020N03LSGXT MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC020N03MS G Trans MOSFET N-CH 30V 25A 8-Pin TDSON EP
BSC020N03MSGATMA1 MOSFET N-CH 30V 100A TDSON-8
BSC019N04LSATMA1 MOSFET N-CH 40V 27A 8TDSON
BSC019N04LSTATMA1 DIFFERENTIATED MOSFETS
BSC019N06NSATMA1 DIFFERENTIATED MOSFETS
BSC020N03LSGATMA2 LV POWER MOS
BSC018NE2LSIATMA1 MOSFET N-CH 25V 29A TDSON-8
BSC020N03LS G MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC019N02KS G RF Bipolar Transistors MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC019N04NS G RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
Infineon Technologies
Infineon Technologies
BSC019N02KSGAUMA1 MOSFET LV POWER MOS
BSC019N02KSGXT/SAMPLE Trans MOSFET N-CH 20V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC019N02KSGAUMA1)
BSC018NE2LSI BSC018NE2LS New and Original
BSC018NE2LSI QFN8 New and Original
BSC019N04NS G(SP00038829 New and Original
BSC019N04NS G) New and Original
BSC019N04NS3G New and Original
BSC020N02LS New and Original
BSC020N03LS3G New and Original
BSC020N03LSG,1N4148W T/R New and Original
BSC020N03MSGINTR-ND New and Original
BSC019N02KS New and Original
BSC019N02KSG New and Original
BSC019N04NS New and Original
BSC020N025S New and Original
BSC020N025SG New and Original
BSC020N03LS New and Original
BSC020N03LSG Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP
BSC020N03MS New and Original
BSC020N03MSG Trans MOSFET N-CH 30V 25A 8-Pin TDSON T/R (Alt: BSC020N03MS G)
BSC019N04NSG Trans MOSFET N-CH 40V 29A 8-Pin TDSON (Alt: SP000388299)
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