 | | | |
| PartNumber | BSC016N03MS G | BSC016N03LSGATMA1 | BSC016N03MSGATMA1 |
| Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 28 A | 100 A | - |
| Rds On Drain Source Resistance | 1.6 mOhms | 1.3 mOhms | - |
| Vgs Gate Source Voltage | 16 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3M | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 16 ns | 8.6 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16 ns | 8.6 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 42 ns | 51 ns | - |
| Typical Turn On Delay Time | 31 ns | 13 ns | - |
| Part # Aliases | BSC016N03MSGATMA1 BSC16N3MSGXT SP000311502 | BSC016N03LS BSC16N3LSGXT G SP000237663 | BSC016N03MS BSC16N3MSGXT G SP000311502 |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Qg Gate Charge | - | 131 nC | - |
| Forward Transconductance Min | - | 65 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC016N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSC016N06NS | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
| BSC016N06NSATMA1 | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
| BSC018NE2LS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC018N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03MS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | ||
| BSC016N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03LSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC017N04NS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N04LSGATMA1 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018N04LSGXT | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
| BSC016N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC016N06NSATMA1 | MOSFET N-CH 60V 30A TDSON-8 | ||
| BSC017N04NSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC016N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
| BSC016N03LSGATMA1 | MOSFET N-CH 30V 100A TDSON8 | ||
| BSC018N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC018NE2LSATMA1 | MOSFET N-CH 25V 100A TDSON-8 | ||
Infineon Technologies |
BSC017N04NSGATMA1 | MOSFET MV POWER MOS | |
| BSC018N04LSGATMA1 | MOSFET MV POWER MOS | ||
| BSC018NE2LSATMA1 | MOSFET LV POWER MOS | ||
| BSC016N03MSGATMA1 | MOSFET LV POWER MOS | ||
| BSC016N03LSGXT/BKN | INSTOCK | ||
| BSC018N04LSGXT | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03LSG , TDA18275A | New and Original | ||
| BSC016N03LSGATMA1 , TDA1 | New and Original | ||
| BSC016N03LSGXT | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03MS | Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8 | ||
| BSC016N03MS G | Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC016N03MS G) | ||
| BSC016N03MSG | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC016N03MSGXT | New and Original | ||
| BSC016N04LS | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC016N04LS G | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP | ||
| BSC016N04LSG | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC016N04LSGS | New and Original | ||
| BSC016N06NS | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
| BSC016N06NS , TDA3629T , | New and Original | ||
| BSC016N06NSXT | New and Original | ||
| BSC017N04NS | New and Original | ||
| BSC017N04NS G | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP | ||
| BSC017N04NSG | New and Original | ||
| BSC018N04LS | New and Original | ||
| BSC018N04LSG | 30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC018N04LSG-S | New and Original | ||
| BSC018N04LSGATMA1 , TDA3 | New and Original | ||
| BSC018NE2L | New and Original | ||
| BSC018NE2LSG | New and Original | ||
| BSC018N04LS G | RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018NE2LS | RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |