 | |  | |
| PartNumber | BSZ097N04LS G | BSZ096N10LS5ATMA1 | BSZ0945NDXTMA1 |
| Description | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | MOSFET | MOSFET DIFFERENTIATED MOSFETS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TSDSON-8 | TSDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 100 V | - |
| Id Continuous Drain Current | 40 A | 40 A | - |
| Rds On Drain Source Resistance | 14.2 mOhms | 9.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.1 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 18 nC | 22 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 35 W | 69 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | OptiMOS 3 | OptiMOS 5 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 24 S | 22 S | - |
| Fall Time | 2.8 ns | 5.3 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.4 ns | 4.6 ns | - |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | 21 ns | - |
| Typical Turn On Delay Time | 3.5 ns | 5.7 ns | - |
| Part # Aliases | BSZ097N04LSGATMA1 BSZ97N4LSGXT SP000388296 | BSZ096N10LS5 SP001352994 | BSZ0945ND |
| Unit Weight | 0.009877 oz | 0.001295 oz | - |
| Development Kit | - | EVAL_1K4W_ZVS_FB_CFD7 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ099N06LS5ATMA1 | MOSFET MV POWER MOS | |
| BSZ0994NSATMA1 | MOSFET | ||
| BSZ097N04LSGATMA1 | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ097N04LS G | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ097N10NS5 | MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ096N10LS5ATMA1 | MOSFET | ||
| BSZ097N10NS5ATMA1 | MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ0945NDXTMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| BSZ097N04LSGATMA1 | MOSFET N-CH 40V 40A TSDSON-8 | ||
| BSZ0994NSATMA1 | MOSFET N-CHANNEL 30V 13A 8TDSON | ||
| BSZ0945NDXTMA1 | TRENCH <= 40V | ||
| BSZ096N10LS5ATMA1 | MV POWER MOS | ||
| BSZ099N06LS5ATMA1 | MV POWER MOS | ||
| BSZ097N10NS5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ096N10LS5 | New and Original | ||
| BSZ097N04L | New and Original | ||
| BSZ097N04LS G | Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP | ||
| BSZ097N04LSG | POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 40V, 0.0142OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSZ097N10NS5 | Trans MOSFET N-CH 100V 40A 8-Pin TSDSON EP T/R | ||
| BSZ097N10NS5ATMA | New and Original | ||
| BSZ099N06LS5 | MOSFETs | ||
| BSZ097N04LSGATMA1-CUT TAPE | New and Original | ||
| BSZ097N10NS5ATMA1-CUT TAPE | New and Original |