2014 Microchip Technology Inc. DS20005137B-page 19
SST25PF080B
5.0 ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maxi-
mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these conditions or conditions greater than those defined in the operational
sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may
affect device reliability.)
Temperature Under Bias.................................................. -55°C to +125°C
Storage Temperature .................................................... -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential.................................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ......................-2.0V to V
DD
+2.0V
Package Power Dissipation Capability (T
A
= 25°C) ...................................... 1.0W
Surface Mount Solder Reflow Temperature ...............................260°C for 10 seconds
Output Short Circuit Current
1
...................................................... 50mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
TABLE 5-1: OPERATING RANGE
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.3-3.6V
TABLE 5-2: AC CONDITIONS OF TEST
1
1. See Figures 5-5 and 5-6
Input Rise/Fall Time Output Load
5ns C
L
=30pF
TABLE 5-3: DC OPERATING CHARACTERISTICS
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DDR
Read Current 12 mA CE#=0.1 V
DD
/0.9 V
DD
@33 MHz, SO=open
I
DDR3
Read Current 20 mA CE#=0.1 V
DD
/0.9 V
DD
@80 MHz, SO=open
I
DDW
Program and Erase Current 30 mA CE#=V
DD
I
SB
Standby Current 20 µA CE#=V
DD
, V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current AV
IN
=GND to V
DD
, V
DD
=V
DD
Max
I
LO
Output Leakage Current AV
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.7 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
V V
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 μA, V
DD
=V
DD
Min
V
OL2
Output Low Voltage 0.4 V I
OL
=1.6 mA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 μA, V
DD
=V
DD
Min
TABLE 5-4: CAPACITANCE (T
A
= 25°C, F=1 MHZ, OTHER PINS OPEN)
Parameter Description Test Condition Maximum
C
OUT
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Output Pin Capacitance V
OUT
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF
SST25PF080B
DS20005137B-page 20 2014 Microchip Technology Inc.
TABLE 5-5: RELIABILITY CHARACTERISTICS
Symbol Parameter Minimum Specification Units Test Method
N
END
1
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100+I
DD
mA JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 5-6: AC OPERATING CHARACTERISTICS, 2.3-2.7V
Symbol Parameter
25 MHz 50 MHz
UnitsMin Max Min Max
F
CLK
1
1. Maximum clock frequency for Read Instruction, 03H, is 25 MHz
Serial Clock Frequency 25 50 MHz
T
SCKH
Serial Clock High Time 18 9 ns
T
SCKL
Serial Clock Low Time 18 9 ns
T
SCKR
2
2. Maximum Rise and Fall time may be limited by T
SCKH
and T
SCKL
requirements
Serial Clock Rise Time (Slew Rate) 0.1 0.1 V/ns
T
SCKF
Serial Clock Fall Time (Slew Rate) 0.1 0.1 V/ns
T
CES
3
3. Relative to SCK.
CE# Active Setup Time 55ns
T
CEH
3
CE# Active Hold Time 55ns
T
CHS
3
CE# Not Active Setup Time 55ns
T
CHH
3
CE# Not Active Hold Time 55ns
T
CPH
CE# High Time 50 50 ns
T
CHZ
CE# High to High-Z Output 15 7 ns
T
CLZ
SCK Low to Low-Z Output 00ns
T
DS
Data In Setup Time 22ns
T
DH
Data In Hold Time 44ns
T
HLS
HOLD# Low Setup Time 55ns
T
HHS
HOLD# High Setup Time 55ns
T
HLH
HOLD# Low Hold Time 55ns
T
HHH
HOLD# High Hold Time 55ns
T
HZ
HOLD# Low to High-Z Output 77ns
T
LZ
HOLD# High to Low-Z Output 77ns
T
OH
Output Hold from SCK Change 00ns
T
V
Output Valid from SCK 12 8 ns
T
SE
Sector-Erase 25 25 ms
T
BE
Block-Erase 25 25 ms
T
SCE
Chip-Erase 50 50 ms
T
BP
Byte-Program 10 10 µs
T
PSID
Program Security ID 10 10 µs
2014 Microchip Technology Inc. DS20005137B-page 21
SST25PF080B
FIGURE 5-1: SERIAL INPUT TIMING DIAGRAM
TABLE 5-7: AC OPERATING CHARACTERISTICS, 2.7-3.6V
Symbol Parameter
33 MHz 80 MHz
UnitsMin Max Min Max
F
CLK
1
Serial Clock Frequency 33 80 MHz
T
SCKH
Serial Clock High Time 13 6 ns
T
SCKL
Serial Clock Low Time 13 6 ns
T
SCKR
2
Serial Clock Rise Time (Slew Rate) 0.1 0.1 V/ns
T
SCKF
Serial Clock Fall Time (Slew Rate) 0.1 0.1 V/ns
T
CES
3
CE# Active Setup Time 55ns
T
CEH
3
CE# Active Hold Time 55ns
T
CHS
3
CE# Not Active Setup Time 55ns
T
CHH
3
CE# Not Active Hold Time 55ns
T
CPH
CE# High Time 50 50 ns
T
CHZ
CE# High to High-Z Output 77ns
T
CLZ
SCK Low to Low-Z Output 00ns
T
DS
Data In Setup Time 22ns
T
DH
Data In Hold Time 44ns
T
HLS
HOLD# Low Setup Time 55ns
T
HHS
HOLD# High Setup Time 55ns
T
HLH
HOLD# Low Hold Time 55ns
T
HHH
HOLD# High Hold Time 55ns
T
HZ
HOLD# Low to High-Z Output 77ns
T
LZ
HOLD# High to Low-Z Output 77ns
T
OH
Output Hold from SCK Change 00ns
T
V
Output Valid from SCK 10 6 ns
T
SE
Sector-Erase 25 25 ms
T
BE
Block-Erase 25 25 ms
T
SCE
Chip-Erase 50 50 ms
T
BP
Byte-Program 10 10 µs
T
PSID
Program Security ID 10 10 µs
1. Maximum clock frequency for Read Instruction, 03H, is 33 MHz
2. Maximum Rise and Fall time may be limited by T
SCKH
and T
SCKL
requirements
3. Relative to SCK.
HIGH-Z
HIGH-Z
CE#
SO
SI
SCK
MSB
LSB
T
DS
T
DH
T
CHH
T
CES
T
CEH
T
CHS
T
SCKR
T
SCKF
T
CPH
25137 SerIn.0

SST25PF080B-80-4C-QAE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.3V to 3.6V 8Mbit SPI Serial Flash
Lifecycle:
New from this manufacturer.
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