©2013 Silicon Storage Technology, Inc. DS20005054C 04/13
19
2 Mbit SPI Serial Flash
SST25VF020B
Data Sheet
Chip-Erase
The Chip-Erase instruction clears all bits in the device to FFH. A Chip-Erase instruction will be ignored
if any of the memory area is protected. Prior to any Write operation, the Write-Enable (WREN) instruction
must be executed. CE# must remain active low for the duration of the Chip-Erase instruction sequence.
The Chip-Erase instruction is initiated by executing an 8-bit command, 60H or C7H. CE# must be driven
high before the instruction is executed. The user may poll the Busy bit in the software status register or wait
T
CE
for the completion of the internal self-timed Chip-Erase cycle. See Figure 15 for the Chip-Erase
sequence.
Figure 15:Chip-Erase Sequence
Read-Status-Register (RDSR)
The Read-Status-Register (RDSR) instruction allows reading of the status register. The Status Regis-
ter may be read at any time even during a Write (Program/Erase) operation. When a Write operation is
in progress, the Busy bit may be checked before sending any new commands to assure that the new
commands are properly received by the device. CE# must be driven low before the RDSR instruction is
entered and remain low until the status data is read. Read-Status-Register is continuous with ongoing
clock cycles until it is terminated by a low to high transition of the CE#. See Figure 16 for the RDSR
instruction sequence.
Figure 16:Read-Status-Register (RDSR) Sequence
CE#
SO
SI
SCK
01234567
60 or C7
HIGH IMPEDANCE
MODE 0
MODE 3
1417 ChEr.0
MSB
©2013 Silicon Storage Technology, Inc. DS20005054C 04/13
20
2 Mbit SPI Serial Flash
SST25VF020B
Data Sheet
Read-Status-Register (RDSR1)
The Read-Status-Register 1 (RDSR1) instruction allows reading of the status register 1. CE# must be
driven low before the RDSR instruction is entered and remain low until the status data is read. Read-
Status-Register 1 is continuous with ongoing clock cycles until it is terminated by a low to high transi-
tion of the CE#. See Figure 17 for the RDSR instruction sequence.
Figure 17:Read-Status-Register 1 (RDSR1) Sequence
Write-Enable (WREN)
The Write-Enable (WREN) instruction sets the Write-Enable-Latch bit in the Status Register to 1 allow-
ing Write operations to occur. The WREN instruction must be executed prior to any Write (Program/
Erase) operation. The WREN instruction may also be used to allow execution of the Write-Status-Reg-
ister (WRSR) instruction; however, the Write-Enable-Latch bit in the Status Register will be cleared
upon the rising edge CE# of the WRSR instruction. CE# must be driven high before the WREN instruc-
tion is executed.
Figure 18:Write Enable (WREN) Sequence
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
1417 RDSR1seq.0
MODE 3
SCK
SI
SO
CE#
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
35
MODE 0
HIGH IMPEDANCE
Status
Register Out
MSB
MSB
CE#
SO
SI
SCK
01234567
06
HIGH IMPEDANCE
MODE 0
MODE 3
1417 WREN.0
MSB
©2013 Silicon Storage Technology, Inc. DS20005054C 04/13
21
2 Mbit SPI Serial Flash
SST25VF020B
Data Sheet
Write-Disable (WRDI)
The Write-Disable (WRDI) instruction resets the Write-Enable-Latch bit and AAI bit to 0 disabling any
new Write operations from occurring. The WRDI instruction will not terminate any programming opera-
tion in progress. Any program operation in progress may continue up to T
BP
after executing the WRDI
instruction. CE# must be driven high before the WRDI instruction is executed.
Figure 19:Write Disable (WRDI) Sequence
Enable-Write-Status-Register (EWSR)
The Enable-Write-Status-Register (EWSR) instruction arms the Write-Status-Register (WRSR)
instruction and opens the status register for alteration. The Write-Status-Register instruction must be
executed immediately after the execution of the Enable-Write-Status-Register instruction. This two-
step instruction sequence of the EWSR instruction followed by the WRSR instruction works like SDP
(software data protection) command structure which prevents any accidental alteration of the status
register values. CE# must be driven low before the EWSR instruction is entered and must be driven
high before the EWSR instruction is executed.
CE#
SO
SI
SCK
01234567
04
HIGH IMPEDANCE
MODE 0
MODE 3
1417 WRDI.0
MSB

SST25VF020B-80-4C-Q3AE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7V to 3.6V 2Mbit SPI Serial Flash
Lifecycle:
New from this manufacturer.
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