MC9S08PA4VWJ Datasheet MC9S08PA4AVDC, MC9S08PA4VTG, MC9S08PA4AVTGR | P13-P15

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0 5 10 15 20 25 30

V OL (V)

I OL (mA)

125°C

25°C

-40°

Figure 8. Typical I

Vs. V

(high drive strength) (V

= 3 V)

5.1.2

Supply current characteristics

This section includes information about power supply current in various operating modes.

Table 4. Supply current characteristics in operating temperature range

Num C Parameter Symbol Bus Freq V

(V) Typical

Max Unit

1 C Run supply current FEI mode,

all modules on; run from flash

20 MHz 5 5.43 — mA

C 10 MHz 3.46 —

1 MHz 1.71 —

C 20 MHz 3 5.35 —

C 10 MHz 3.45 —

1 MHz 1.69 —

2 C Run supply current FEI mode,

all modules off and gated; run

from flash

20 MHz 5 4.51 — mA

C 10 MHz 3.01 —

1 MHz 1.68 —

C 20 MHz 3 4.47 —

C 10 MHz 2.99 —

1 MHz 1.65 —

3 P Run supply current FBE

mode, all modules on; run

from RAM

20 MHz 5 5.31 7.41 mA

C 10 MHz 3.17 —

1 MHz 1.25 —

C 20 MHz 3 5.29 —

Table continues on the next page...

Nonswitching electrical specifications

MC9S08PA4 Data Sheet, Rev. 8, 08/2018

NXP Semiconductors 13

Table 4. Supply current characteristics in operating temperature range (continued)

Num C Parameter Symbol Bus Freq V

(V) Typical

Max Unit

C 10 MHz 3.17 —

1 MHz 1.24 —

4 P Run supply current FBE

mode, all modules off and

gated; run from RAM

20 MHz 5 4.39 6.59 mA

C 10 MHz 2.71 —

1 MHz 1.21 —

C 20 MHz 3 4.39 —

C 10 MHz 2.71 —

1 MHz 1.20 —

5 C Wait mode current FEI mode,

all modules on

20 MHz 5 3.62 — mA

C 10 MHz 2.27 —

1 MHz 1.11 —

C 20 MHz 3 3.61 —

10 MHz 2.31 —

1 MHz 1.10 —

6 C Stop3 mode supply current

no clocks active (except 1

kHz LPO clock)

2, 3

S3I

— 5 5.4 — µA

C — 3 1.40 —

7 C ADC adder to stop3

ADLPC = 1

ADLSMP = 1

ADCO = 1

MODE = 10B

ADICLK = 11B

— — 5 96.0 — µA

C — — 3 88.3 —

8 C LVD adder to stop3

— — 5 129 — µA

C 3 126 —

1. Data in Typical column was characterized at 5.0 V, 25 °C or is typical recommended value.

2. RTC adder cause <1 µA I

increase typically, RTC clock source is 1 kHz LPO clock.

3. ACMP adder cause <10 µA I

increase typically.

4. LVD is periodically woken up from stop3 by 5% duty cycle. The period is equal to or less than 2 ms.

5.1.3 EMC performance

Electromagnetic compatibility (EMC) performance is highly dependent on the

environment in which the MCU resides. Board design and layout, circuit topology

choices, location and characteristics of external components as well as MCU software

operation all play a significant role in EMC performance. The system designer should

consult NXP applications notes such as AN2321, AN1050, AN1263, AN2764, and

AN1259 for advice and guidance specifically targeted at optimizing EMC performance.

Nonswitching electrical specifications

MC9S08PA4 Data Sheet, Rev. 8, 08/2018

14 NXP Semiconductors

5.1.3.1 EMC radiated emissions operating behaviors

Table 5. EMC radiated emissions operating behaviors for 20-pin SOIC package

Symbol Description Frequency

band (MHz)

Typ. Unit Notes

RE1

Radiated emissions voltage, band 1 0.15–50 7 dBμV 1, 2

RE2

Radiated emissions voltage, band 2 50–150 9 dBμV

RE3

Radiated emissions voltage, band 3 150–500 8 dBμV

RE4

Radiated emissions voltage, band 4 500–1000 5 dBμV

RE_IEC

IEC level 0.15–1000 N — 2, 3

1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150

kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement of

Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband

TEM Cell Method. Measurements were made while the microcontroller was running basic application code. The reported

emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the

measured orientations in each frequency range.

2. V

= 5.0 V, T

= 25 °C, f

OSC

= 10 MHz (crystal), f

SYS

= 20 MHz, f

BUS

= 20 MHz

3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband

TEM Cell Method

Switching specifications

5.2.1

Control timing

Table 6. Control timing

Num C Rating Symbol Min Typical

Max Unit

1 P Bus frequency (t

cyc

= 1/f

Bus

) f

Bus

DC — 20 MHz

2 P Internal low power oscillator frequency f

LPO

0.67 1.0 1.25 KHz

3 D External reset pulse width

extrst

1.5 ×

cyc

— — ns

4 D Reset low drive t

rstdrv

34 × t

cyc

— — ns

5 D BKGD/MS setup time after issuing background

debug force reset to enter user or BDM modes

MSSU

500 — — ns

6 D BKGD/MS hold time after issuing background

debug force reset to enter user or BDM modes

MSH

100 — — ns

7 D IRQ pulse width Asynchronous

path

ILIH

100 — — ns

D Synchronous path

IHIL

1.5 × t

cyc

— — ns

8 D Keyboard interrupt pulse

width

Asynchronous

path

ILIH

100 — — ns

D Synchronous path t

IHIL

1.5 × t

cyc

— — ns

9 C Port rise and fall time -

standard drive strength

(load = 50 pF)

— t

Rise

— 10.2 — ns

C t

Fall

— 9.5 — ns

Table continues on the next page...

5.2

Switching specifications

MC9S08PA4 Data Sheet, Rev. 8, 08/2018

NXP Semiconductors 15

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P24 P25-P27 P28-P29

MC9S08PA4VWJ

Mfr. #:

Buy MC9S08PA4VWJ

Manufacturer:

NXP / Freescale

Description:

8-bit Microcontrollers - MCU 8 BIT,low end Core,4k Fl

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

MC9S08PA4VWJ

MC9S08PA4VWJ

Products related to this Datasheet