Rev. 1.6 13
Si8650/51/52/55
Timing Characteristics
Si865xBx, Ex
Maximum Data Rate
0—150
Mbps
Minimum Pulse Width
——5.0
ns
Propagation Delay t
PHL
, t
PLH
See Figure 2
5.0 8.0 14
ns
Pulse Width Distortion
|t
PLH
-
t
PHL
|
PWD See Figure 2
—0.25.0
ns
Propagation Delay Skew
2
t
PSK(P-P)
—2.05.0
ns
Channel-Channel Skew t
PSK
—0.42.5
ns
All Models
Output Rise Time t
r
C
L
=15pF
See Figure 2
2.5 4.0
ns
Output Fall Time t
f
C
L
=15pF
See Figure 2
2.5 4.0
ns
Peak Eye Diagram Jitter t
JIT(PK)
See Figure 7 350 ps
Common Mode Transient
Immunity at Logic Low Output
CMTI V
I
=V
DD
or 0 V
35 50
—kV/µs
Enable to Data Valid t
en1
See Figure 1
6.0 11
ns
Enable to Data Tri-State t
en2
See Figure 1
8.0 12
ns
Startup Time
3
t
SU
—1540µs
Table 4. Electrical Characteristics (Continued)
(V
DD1
=2.5V ±5%, V
DD2
= 2.5 V ±5%, T
A
= –40 to 125 ºC)
Parameter Symbol Test Condition Min Typ Max Unit
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. t
PSK(P-P)
is the magnitude of the difference in propagation delay times measured between different units operating at the
same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
14 Rev. 1.6
Si8650/51/52/55
Table 5. Regulatory Information*
CSA
The Si865x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 600 V
RMS
reinforced insulation working voltage; up to 600 V
RMS
basic insulation working voltage.
60950-1: Up to 600 V
RMS
reinforced insulation working voltage; up to 1000 V
RMS
basic insulation working volt-
age.
60601-1: Up to 125 V
RMS
reinforced insulation working voltage; up to 380 V
RMS
basic insulation working voltage.
VDE
The Si865x is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 1200 V
peak
for basic insulation working voltage.
60950-1: Up to 600 V
RMS
reinforced insulation working voltage; up to 1000 V
RMS
basic insulation working volt-
age.
UL
The Si865x is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 5000 V
RMS
isolation voltage for basic protection.
*Note: Regulatory Certifications apply to 3.75 kV
RMS
rated devices which are production tested to 4.5 kV
RMS
for 1 sec.
Regulatory Certifications apply to 5.0 kV
RMS
rated devices which are production tested to 6.0 kV
RMS
for 1 sec.
For more information, see "6. Ordering Guide" on page 28.
Table 6. Insulation and Safety-Related Specifications
Parameter Symbol Test Condition
Value
Unit
WB
SOIC-16
NB
SOIC-16
QSOP-16
Nominal Air Gap (Clearance)
1
L(IO1) 8.0 4.9 3.6 mm
Nominal External Tracking
(Creepage)
1
L(IO2) 8.0 4.01 3.6 mm
Minimum Internal Gap
(Internal Clearance)
0.014 0.011 0.008
mm
Tracking Resistance
(Proof Tracking Index)
PTI IEC60112 600 600 600 V
RMS
Erosion Depth ED 0.019 0.019 0.031 mm
Resistance (Input-Output)
2
R
IO
10
12
10
12
10
12
Capacitance (Input-Output)
2
C
IO
f = 1 MHz 2.0 2.0 2.0 pF
Input Capacitance
3
C
I
4.0 4.0 4.0 pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values. VDE certifies the clearance and
creepage limits as 4.7 mm minimum for the NB SOIC-16 and QSOP-16 packages and 8.5 mm minimum for the WB
SOIC-16 package. UL does not impose a clearance and creepage minimum for component-level certifications. CSA
certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-16, 3.6 mm minimum for the QSOP-
16 packages and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si86xx is converted into a 2-terminal device. Pins 1–8 are shorted
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
3. Measured from input pin to ground.
Rev. 1.6 15
Si8650/51/52/55
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Test Conditions
Specification
NB SOIC-16 WB SOIC-16
Basic Isolation Group Material Group I I
Installation Classification
Rated Mains Voltages <
150 V
RMS
I-IV I-IV
Rated Mains Voltages <
300 V
RMS
I-III I-IV
Rated Mains Voltages <
400 V
RMS
I-II I-III
Rated Mains Voltages <
600 V
RMS
I-II I-III
Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Parameter
Symbol Test Condition
Characteristic
Unit
WB
SOIC-16
NB
SOIC-16
Maximum Working Insulation
Voltage
V
IORM
1200 630 Vpeak
Input to Output Test Voltage
V
PR
Method b1
(V
IORM
x1.875=V
PR
, 100%
Production Test, t
m
= 1 sec,
Partial Discharge < 5 pC)
2250 1182
Transient Overvoltage
V
IOTM
t = 60 sec 6000 6000 Vpeak
Pollution Degree
(DIN VDE 0110, Table 1)
22
Insulation Resistance at T
S
,
V
IO
=500V
R
S
>10
9
>10
9
*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
40/125/21.
Table 9. IEC Safety Limiting Values
1
Parameter Symbol Test Condition Min Typ
Max
Unit
WB
SOIC-16
NB
SOIC-16
Case Temperature T
S
150 150 °C
Safety Input, Output, or
Supply Current
I
S
JA
= 100 °C/W (WB SOIC-16),
105 °C/W
(NB SOIC-16, QSOP-16),
V
I
=5.5V, T
J
= 150 °C, T
A
=2C
220 215 mA
Device Power
Dissipation
2
P
D
415 415 mW
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
wave.

SI8650BC-B-IS1R

Mfr. #:
Manufacturer:
Silicon Labs
Description:
Digital Isolators 3.75 kV 5-channel digital isolator
Lifecycle:
New from this manufacturer.
Delivery:
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