8 Rev. 1.6
Si8650/51/52/55
Table 3. Electrical Characteristics
(V
DD1
= 3.3 V±10%, V
DD2
= 3.3 V±10%, T
A
= –40 to 125 ºC)
Parameter Symbol Test Condition Min Typ Max Unit
VDD Undervoltage Threshold VDDUV+ V
DD1
, V
DD2
rising 1.95 2.24 2.375 V
VDD Undervoltage Threshold VDDUV– V
DD1
, V
DD2
falling 1.88 2.16 2.325 V
VDD Negative-Going Lockout
Hysteresis
VDD
HYS
50 70 95 mV
Positive-Going Input Threshold VT+ All inputs rising 1.4 1.67 1.9 V
Negative-Going Input Threshold VT– All inputs falling 1.0 1.23 1.4 V
Input Hysteresis V
HYS
0.38 0.44 0.50 V
High Level Input Voltage V
IH
2.0 — — V
Low Level Input Voltage V
IL
——0.8V
High Level Output Voltage V
OH
loh = –4 mA V
DD1
,V
DD2
–0.4 3.1 — V
Low Level Output Voltage V
OL
lol = 4 mA — 0.2 0.4 V
Input Leakage Current I
L
——±10µA
Output Impedance
1
Z
O
—50—
Enable Input High Current I
ENH
V
ENx
= V
IH
—2.0—µA
Enable Input Low Current I
ENL
V
ENx
= V
IL
—2.0—µA
DC Supply Current (All inputs 0 V or at supply)
Si8650Bx, Ex, Si8655Bx
V
DD1
V
DD2
V
DD1
V
DD2
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
—
—
—
—
1.1
3.1
7.0
3.3
1.8
4.7
9.8
5.0
mA
Si8651Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
—
—
—
—
1.5
2.7
6.6
4.0
2.4
4.1
9.2
6.0
mA
Si8652Bx, Ex
V
DD1
V
DD2
V
DD1
V
DD2
V
I
= 0(Bx), 1(Ex)
V
I
= 0(Bx), 1(Ex)
V
I
= 1(Bx), 0(Ex)
V
I
= 1(Bx), 0(Ex)
—
—
—
—
2.0
2.4
5.6
5.0
3.0
3.6
7.8
7.5
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. t
PSK(P-P)
is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
