16 Rev. 1.6
Si8650/51/52/55
Figure 3. (WB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Figure 4. (NB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Table 10. Thermal Characteristics
Parameter Symbol Test Condition WB SOIC-16
NB SOIC-16
QSOP-16
Unit
IC Junction-to-Air Thermal
Resistance
JA
100 105 ºC/W
0 20015010050
500
400
200
100
0
Temperature (ºC)
Safety-Limiting Current (mA)
430
300
360
215
V
DD1
, V
DD2
= 2.70 V
V
DD1
, V
DD2
= 3.6 V
V
DD1
, V
DD2
= 5.5 V
Rev. 1.6 17
Si8650/51/52/55
Table 11. Absolute Maximum Ratings
1
Parameter Symbol Min Typ Max Unit
Storage Temperature
2
T
STG
–65 150 ºC
Ambient Temperature Under Bias T
A
–40 125 ºC
Junction Temperature T
J
——150°C
Supply Voltage V
DD1
, V
DD2
–0.5 7.0 V
Input Voltage V
I
–0.5 V
DD
+ 0.5 V
Output Voltage V
O
–0.5 V
DD
+ 0.5 V
Output Current Drive Channel
(All devices unless otherwise stated)
I
O
——10mA
Output Current Drive Channel
(All Si865xxA-x-xx devices)
I
O
——22mA
Latchup Immunity
3
——100V/ns
Lead Solder Temperature (10 s) 260 ºC
Maximum Isolation (Input to Output) (1 sec)
NB SOIC-16, QSOP-16
4500 V
RMS
Maximum Isolation (Input to Output) (1 sec)
WB SOIC-16
6500 V
RMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 °C.
3. Latchup immunity specification is for slew rate applied across GND1 and GND2.
18 Rev. 1.6
Si8650/51/52/55
2. Functional Description
2.1. Theory of Operation
The operation of an Si865x channel is analogous to that of an opto coupler, except an RF carrier is modulated
instead of light. This simple architecture provides a robust isolated data path and requires no special
considerations or initialization at start-up. A simplified block diagram for a single Si865x channel is shown in
Figure 5.
Figure 5. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier.
Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The
Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the
result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it
provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See
Figure 6 for more details.
Figure 6. Modulation Scheme
RF
OSCILLATOR
MODULATOR DEMODULATOR
A B
Semiconductor-
Based Isolation
Barrier
Transmitter Receiver
Input Signal
Output Signal
Modulation Signal

SI8650BC-B-IS1R

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Silicon Labs
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Digital Isolators 3.75 kV 5-channel digital isolator
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