9©2017 Integrated Device Technology, Inc. October 24, 2017
5L2503 Datasheet
Input Capacitance, LVCMOS Output Impedance, and Internal Pull-down
Resistance
(T
A
= +25 °C)
Recommended Crystal Characteristics
DC Electrical Characteristics
1
Single CMOS driver active.
2
OUT1–3 current measured with 0.5 inches transmission line and no load.
Table 15: Input Capacitance, LVCMOS Output Impedance, and Internal Pull-down Resistance
Symbol Parameter Minimum Typical Maximum Units
C
IN
Input Capacitance (OE, SDA, SCL) 3 7 pF
Pull-down Resistor OE 150 kΩ
R
OUT
LVCMOS Output Driver Impedance (V
DDOUTx
= 1.8V) 17
Table 16: Crystal Characteristics
Parameter Minimum Typical Maximum Units
Mode of Oscillation Fundamental
Frequency 8 48 MHz
Frequency Tolerance -20 20 ppm
Equivalent Series Resistance (ESR) 10 100 Ω
Shunt Capacitance 2 7 pF
Load Capacitance (C
L
)6810pF
Maximum Crystal Drive Level 100 μW
Table 17: DC Electrical Characteristics
Symbol Parameter Conditions Minimum Typical Maximum Units
I
DD
Operation Supply
Current
V
DD
= V
DDO
= V
DD1_8
= 1.8V; OUT1 = 12MHz,
OUT3 = 26MHz, OUT2 off, no load.
2.0 mA
V
DD
= V
DDO
= V
DD1_8
= 1.8V; OUT1 = 12MHz,
OUT3 = 26MHz, OUT2 off, with load.
3.5 mA
V
DD
= V
DDO
= V
DD1_8
= 1.8V; OUT1 = 26MHz,
OUT3 = 26MHz, OUT2 = 32kHz, no load.
1.8 mA
V
DD
= V
DDO
= V
DD1_8
= 1.8V; OUT1 = 26MHz,
OUT3 = 26MHz, OUT2 = 32kHz, with load.
3.8 mA
I
DDPD
Power Down
Current
PD asserted with V
DD1_8
and V
DDO
ON, I
2
C
programming, 32k running.
390 μA
I
DDSUSPEND
Power Suspend
Current
V
DDOUT2
OFF and only V
DDOUT1
and V
DD1_8
ON, I
2
C programming, 32k running.
1.6 2.0 μA