9©2017 Integrated Device Technology, Inc December 18, 2017
5X2503 Datasheet
Input Capacitance, LVCMOS Output Impedance, and Internal Pull-down
Resistance
(T
A
= +25 °C)
Integrated Crystal Characteristics
1
Frequency deviation–refer to center frequency.
DC Electrical Characteristics
1
Single CMOS driver active.
2
OUT1–3 current measured with 0.5 inches transmission line and no load.
Table 10. Input Capacitance, LVCMOS Output Impedance, and Internal Pull-down Resistance
Symbol Parameter Minimum Typical Maximum Units
C
IN
Input Capacitance (OE, SDA, SCL) — 3 7 pF
Pull-down Resistor OE — 150 — kΩ
R
OUT
LVCMOS Output Driver Impedance (V
DDOUTx
= 1.8V) — 17 — Ω
Table 11. Crystal Characteristics
Parameter Test Conditions Minimum Typical Maximum Units
Mode of Oscillation — Fundamental
Frequency — — 26 — MHz
Frequency Tolerance (25°C)
1
—-20—20ppm
Equivalent Series Resistance (ESR) — — 10 100 Ω
Shunt Capacitance — — 2 7 pF
Load Capacitance (C
L
) — 6 8 10 pF
Maximum Crystal Drive Level — — — 100 μW
Table 12. DC Electrical Characteristics
1,2
Symbol Parameter Conditions Minimum Typical Maximum Units
I
DD
Operation Supply Current
V
DD
= V
DDOUTx
= V
DD1_8
= 1.8V; OUT1 = 12MHz,
OUT3 = 26MHz, OUT2 off, no load.
—2.0—mA
V
DD
= V
DDOUTx
= V
DD1_8
= 1.8V; OUT1 = 12MHz,
OUT3 = 26MHz, OUT2 off, with load.
—3.5—mA
V
DD
= V
DDOUTx
= V
DD1_8
= 1.8V; OUT1 = 26MHz,
OUT3 = 26MHz, OUT2 = 32kHz, no load.
—1.8—mA
V
DD
= V
DDOUTx
= V
DD1_8
= 1.8V; OUT1 = 26MHz,
OUT3 = 26MHz, OUT2 = 32kHz, with load.
—3.8—mA
I
DDPD
Power Down Current
PD asserted with V
DD1_
8 and V
DDOUTx
on, I
2
C
programming, 32kHz running.
—390—μA
I
DDSUSPEND
Power Suspend Current
V
DDOUT2
off and only V
DDOUT1
and V
DD1_8
on,
I
2
C programming, 32kHz running.
—1.62.0μA