DS2761
22 of 24
ABSOLUTE MAXIMUM RATINGS*
Voltage on PLS and CC Pin, Relative to V
SS
-0.3V to +18V
Voltage on PIO Pin, Relative to V
SS
-0.3V to +12V
Voltage on VIN and
PS, Relative to V
SS
-0.3V to V
DD
+ 0.3
Voltage on any Other Pin, Relative to V
SS
-0.3V to +6V
Continuous Internal Sense Resistor Current
±2.5A
Pulsed Internal Sense Resistor Current
±50A for <100µs/sec, <1000 pulses
Operating Temperature Range -40°C to +85°C
Storage Temperature Range -55°C to +125°C
Soldering Temperature See IPC/JEDECJ-STD-020A
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC
OPERATING CONDITIONS (-20°C to +70°C, 2.5V £ V
DD
£ 5.5V)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS NOTES
Supply Voltage V
DD
2.5 5.5 V 1
Data Pin DQ -0.3 +5.5 V 1
DC ELECTRICAL CHARACTERISTICS (-20°C to +70°C, 2.5V £ V
DD
£ 5.5V)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS NOTES
Active Current I
ACTIVE
DQ = V
DD
,
norm. operation
60 90
mA
Sleep Mode Current I
SLEEP
DQ = 0V,
no activity,
PS
floating
1 2
mA
Input Logic High:
DQ, PIO
V
IH
1.5 V 1
Input Logic High:
PS
V
IH
V
DD
-
0.2V
V 1
Input Logic Low:
DQ, PIO
V
IL
0.4 V 1
Input Logic Low:
PS
V
IL
0.2 V 1
Output Logic High:
CC
V
OH
I
OH
= -0.1mA V
PLS
-
0.4V
V 1
Output Logic High:
DC
V
OH
I
OH
= -0.1mA V
DD
-
0.4V
V 1
Output Logic Low:
CC , DC
V
OL
I
OL
= 0.1mA 0.4 V 1
Output Logic Low:
DQ, PIO
V
OL
I
OL
= 4mA 0.4 V 1
DQ Pulldown Current I
PD
1
mA
Input Resistance: V
IN
R
IN
5
M
W
Internal Current-Sense
Resistor
R
SNS
+25°C
20 25 30
mW
DQ Low to Sleep time t
SLEEP
2.1 s
DS2761
23 of 24
ELECTRICAL CHARACTERISTICS:
PROTECTION CIRCUITRY (0°C to +50°C, 2.5V £ V
DD
£ 5.5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Overvoltage Detect V
OV
4.325
4.250
4.350
4.275
4.375
4.300
V 1, 2
Charge Enable V
CE
4.10 4.15 4.20 V 1
Undervoltage Detect V
UV
2.5 2.6 2.7 V 1
Overcurrent Detect I
OC
1.8 1.9 2.0 A 3
Overcurrent Detect V
OC
45 47.5 50 mV 1, 4
Short-Circuit Detect I
SC
5.0 8.0 11 A 3
Short-Circuit Detect V
SC
150 200 250 mV 1
Overvoltage Delay t
OVD
0.8 1 1.2 sec
Undervoltage Delay t
UVD
90 100 110 ms
Overcurrent Delay t
OCD
5 10 20 ms
Short-Circuit Delay t
SCD
80 100 120 ms
Test Threshold V
TP
0.5 1.0 1.5 V
Test Current I
TST
10 20 40 mA
Recovery Charge Current I
RC
0.5 1 2
mA
13
ELECTRICAL CHARACTERISTICS:
TEMPERATURE, VOLTAGE, CURRENT (-20°C to +50°C, 2.5V £ V
DD
£ 5.5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Temperature Resolution T
LSB
0.125
°C
Temperature Full-Scale
Magnitude
T
FS
127
°C
Temperature Error T
ERR
±3 °C
5
Voltage Resolution V
LSB
4.88 mV
Voltage Full-Scale
Magnitude
V
FS
4.75 V
Voltage Offset Error V
OERR
1 LSB 6
Voltage Gain Error V
GERR
5 %
Current Resolution I
LSB
0.625
15.625
mA
mV
3
4
Current Full-Scale
Magnitude
I
FS
1.9
2.56
64
A
mV
3, 4
7
Current Offset Error I
OERR
1 LSB 8
Current Gain Error I
GERR
3
1
% 3, 9, 14
4
Accumulated Current
Resolution
q
CA
0.25
6.25
mAhr
µVhr
3
4
Current Sampling
Frequency
f
SAMP
1456 Hz
Internal Timebase Accuracy t
ERR
±1 ±3
% 10
DS2761
24 of 24
ELECTRICAL CHARACTERISTICS:
1-WIRE INTERFACE (-20°C to +70°C, 2.5V £ V
DD
£ 5.5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Time Slot t
SLOT
60 120 ms
Recovery Time t
REC
1 ms
Write 0 Low Time t
LOW0
60 120 ms
Write 1 Low Time t
LOW1
1 15 ms
Read Data Valid t
RDV
15 ms
Reset Time High t
RSTH
480 ms
Reset Time Low t
RSTL
480 960 ms
Presence Detect High t
PDH
15 60 ms
Presence Detect Low t
PDL
60 240 ms
SWAP Timing Pulse Width t
SWL
0.2 120 ms
SWAP Timing Pulse Falling
Edge to
DC Release
t
SWOFF
0 1 ms 12
SWAP Timing Pulse Rising Edge
to
DC Engage
t
SWON
0 1 ms 12
DQ Capacitance C
DQ
60 pF
EEPROM RELIABILITY SPECIFICATION (-20°C to +70°C, 2.5V £ V
DD
£ 5.5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Copy to EEPROM Time t
EEC
2 10 ms
EEPROM Copy Endurance N
EEC
25000 cycles 11
NOTES
1) All voltages are referenced to V
SS
.
2) See the Ordering Information section to determine the corresponding part number for each V
OV
value.
3) Internal current-sense resistor configuration.
4) External current-sense resistor configuration.
5) Self-heating due to output pin loading and sense resistor power dissipation can alter the reading from ambient conditions.
6) Voltage offset measurement is with respect to V
OV
at +25°C.
7) The current register supports measurement magnitudes up to 2.56A using the internal sense resistor option and 64mV with
the external resistor option. Compensation of the internal sense resistor value for process and temperature variation can
reduce the maximum reportable magnitude to 1.9A.
8) Current offset error null to ±1LSB typically requires 3.5s in-system calibration by user.
9) Current gain error specification applies to gain error in converting the voltage difference at IS1 and IS2, and excludes any
error remaining after the DS2761 compensates for the internal sense resistor’s temperature coefficient of 3700ppm/°C to
an accuracy of ±500ppm/°C. The DS2761 does not compensate for external sense resistor characteristics, and any error
terms arising from the use of an external sense resistor should be taken into account when calculating total current
measurement error.
10) Typical value for t
ERR
is at 3.6V and +25°C.
11) Four year data retention at +70°C.
12) Typical load capacitance on
DC and CC is 1000pF.
13) Test conditions are PLS = 4.1V, V
DD
= 2.5V. Maximum current for conditions of PLS = 15V,
V
DD
= 0V is 10mA.
14) Error at time of shipment from Dallas Semiconductor is 3% max. Board mounting processes may cause the current gain
error to widen to as much as 10% for devices with the internal sense resistor option. Contact factory for on-board
recalibration procedure for devices with the internal sense resistor option to improve accuracy.

DS2761BE+025

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Battery Management
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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