©2014 Silicon Storage Technology, Inc. DS20005020B 07/14
Data Sheet
www.microchip.com
32 Mbit (x16) Multi-Purpose Flash Plus
SST39VF3201C / SST39VF3202C
Features
Organized as 2M x16
Single Voltage Read and Write Operations
2.7-3.6V
Superior Reliability
Endurance: 100,000 Cycles (Typical)
Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
Active Current: 6 mA (typical)
Standby Current: 4 µA (typical)
Auto Low Power Mode: 4 µA (typical)
Hardware Block-Protection/WP# Input Pin
Top Block-Protection (top two 4-KWord blocks)
for SST39VF3202C
Bottom Block-Protection (bottom two 4-KWord blocks)
for SST39VF3201C
Sector-Erase Capability
Uniform 2 KWord sectors
Block-Erase Capability
Flexible block architecture
Eight 4-KWord blocks, 63 32-KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature
Microchip: 128 bits; User: 128 words
Fast Read Access Time:
–70ns
Latched Address and Data
Fast Erase and Word-Program:
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 35 ms (typical)
Word-Program Time: 7 µs (typical)
Automatic Write Timing
Internal V
PP
Generation
End-of-Write Detection
Toggle Bits
Data# Polling
RY/BY# Pin
CMOS I/O Compatibility
JEDEC Standard
Flash EEPROM Pin Assignments
Packages Available
48-lead TSOP (12mm x 20mm)
48-ball TFBGA (6mm x 8mm)
All devices are RoHS compliant
The SST39VF3201C and SST39VF3202C devices are 2M x16, CMOS Multi-Pur-
pose Flash Plus (MPF+) manufactured with proprietary, high performance CMOS
SuperFlash technology. The split-gate cell design and thick-oxide tunneling injec-
tor attain better reliability and manufacturability compared with alternate
approaches. The SST39VF3201C and SST39VF3202C write (Program or Erase)
with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts
for x16 memories.
©2014 Silicon Storage Technology, Inc. DS20005020B 07/14
2
32 Mbit Multi-Purpose Flash Plus
SST39VF3201C / SST39VF3202C
Data Sheet
Product Description
The SST39VF3201C and SST39VF3202C devices are 2M x16 CMOS Multi-Purpose Flash Plus
(MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-
gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability com-
pared with alternate approaches. The SST39VF3201C/3202C write (Program or Erase) with a 2.7-
3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST39VF3201C/3202C devices provide a typical
Word-Program time of 7 µsec. These devices use Toggle Bit, Data# Polling, or RY/BY# pin to indicate
the completion of Program operation. To protect against inadvertent write, they have on-chip hardware
and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data
retention is rated at greater than 100 years.
The SST39VF3201C/3202C devices are suited for applications that require convenient and economical
updating of program, configuration, or data memory. For all system applications, they significantly
improve performance and reliability, while lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for program, data, and configuration storage
applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high-density, surface mount requirements, the SST39VF3201C/3202C devices are offered in
48-lead TSOP and 48-ball TFBGA packages. See Figure 2 and Figure 3 for pin assignments.
©2014 Silicon Storage Technology, Inc. DS20005020B 07/14
3
32 Mbit Multi-Purpose Flash Plus
SST39VF3201C / SST39VF3202C
Data Sheet
Block Diagram
Figure 1: Functional Block Diagram
Y-Decoder
I/O Buffers and Data Latches
1410 B1.0
Address Buffer Latches
X-Decoder
DQ
15
-DQ
0
Memory Address
OE#
CE#
WE#
SuperFlash
Memory
Control Logic
WP#
RESET#
RY/BY#

SST39VF3201C-70-4I-B3KE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7V to 3.6V 32Mbit Multi-Prps Fl
Lifecycle:
New from this manufacturer.
Delivery:
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