TJA1083G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 1 — 18 January 2018 34 of 41
NXP Semiconductors
TJA1083G
FlexRay node transceiver
15.2 Implementation of EPL 3.0.1 requirements in the TJA1083G
Table 15. EPL 3.0.1 implementation in TJA1083G
EPL 3.0.1 TJA1083G
Min Max Unit Symbol Min Max Unit
dBDRxAsym - 5 ns t
d(bus-RXD)
05 ns
dBDRx10 - 75 ns t
d(bus-RXD)
-75ns
dBDRx01 - 75 ns t
d(bus-RXD)
-75ns
dBDRxai 50 275 ns t
det(idle)(bus)
+ t
d(bus-RXD)
100 275 ns
dBDRxia 100 325 ns t
det(act)(bus)
+ t
d(bus-RXD)
100 325 ns
dBDTxAsym - 4 ns t
d(TXD-bus)
04 ns
dBDTx10 - 75 ns t
d(TXD-bus)
-60ns
dBDTx01 - 75 ns t
d(TXD-bus)
-60ns
dBDTxai - 75 ns t
d(TXEN-busidle)
-75ns
dBDTxia - 75 ns t
d(TXEN-busact)
-75ns
dBusTxai - 30 ns t
r(bus)(act-idle)
-30ns
dBusTxia - 30 ns t
f(bus)(idle-act)
-30ns
dBusTx01 6 18.75 ns t
r(dif)(bus)
6 18.75 ns
dBusTx10 6 18.75 ns t
f(dif)(bus)
6 18.75 ns
uBDTx
active
600 2000 mV V
OH(dif)
600 2000 mV
uBDTx
idle
030mVV
o(idle)(dif)
025mV
uV
DIG-OUT-HIGH
80 100 % V
OH(RXD)
V
IO
0.4 V
IO
V
V
OH(ERRN)
V
IO
0.4 V
IO
V
uV
DIG-OUT-LOW
-20%V
OL(RXD)
-0.4V
V
OL(ERRN)
-0.4V
uV
DIG-IN-HIGH
-70%V
IH(TXEN)
0.7V
IO
5.5 V
V
IH(STBN)
0.7V
IO
5.5 V
V
IH(BGE)
0.7V
IO
5.5 V
uV
DIG-IN-LOW
30 - % V
IL(TXEN)
0.3 +0.3V
IO
V
V
IL(STBN)
0.3 +0.3V
IO
V
V
IL(BGE)
0.3 +0.3V
IO
V
uData0 300 150 mV V
IL(dif)
300 150 mV
uData1 150 300 mV V
IH(dif)
150 300 mV
uData1-|uData0| 30 30 mV V
i(dif)(H-L)
-30mV
dBDActivityDetection 100 250 ns t
det(act)(bus)
100 250 ns
dBDIdleDetection 50 200 ns t
det(idle)(bus)
100 200 ns
R
CM1
, R
CM2
10 40 k R
i(BP)
, R
i(BM)
10 40 k
uCM 10 15 V V
cm
[1]
10 +15 V
iBM
GNDShortMax
-60mAI
O(sc)(BM)
-60mA
iBP
GNDShortMax
-60mAI
O(sc)(BP)
-60mA
iBM
BAT48ShortMax
-72mAI
O(sc)(BM)
-60mA
iBP
BAT48ShortMax
-72mAI
O(sc)(BP)
-60mA
iBM
BAT27ShortMax
-60mAI
O(sc)(BM)
-60mA
TJA1083G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 1 — 18 January 2018 35 of 41
NXP Semiconductors
TJA1083G
FlexRay node transceiver
iBP
BAT27ShortMax
-60mAI
O(sc)(BP)
-60mA
uBias, non low-power modes 1800 3200 mV V
o(idle)(BP)
, V
o(idle)(BM)
[2]
1800 3150 mV
uBias, low-power modes -200 200 mV V
o(idle)(BP)
, V
o(idle)(BM)
[3]
0.1 +0.1 V
dWU
0Detect
14st
det(wake)DATA_0
14 s
dWU
IdleDetect
14st
det(wake)idle
14 s
dWU
Timeout
48 140 st
det(wake)tot
50 115 s
uBDUVV
CC
4- VV
uvd(VCC)
4.45 4.729 V
dBDUVV
CC
- 1000 ms t
det(uv)(VCC)
2100s
iBP
Leak
-25AI
LI(BP)
-5 +5 A
iBM
Leak
-25AI
LI(BM)
-5 +5 A
Functional class ‘bus driver logic
level adaptation’
implemented; see
Section 2.4
Functional class ‘bus driver - bus
guardian interface’
implemented; see
Section 2.4
Device qualification according to
AEC-Q100 (Rev. F)
see Section 2.1
T
AMB_Class1
40 125 CT
amb
40 +125 C
dBDTxDM 50 50 ns t
d(TXEN-bus)
50 50 ns
iBM
-5VshortMax
-60mAI
O(sc)(BM)
-60mA
iBP
-5VshortMax
-60mAI
O(sc)(BP)
-60mA
iBM
BPShortMax
-60mAI
O(sc)(BM)
-60mA
iBP
BMShortMax
-60mAI
O(sc)(BP)
-60mA
iBM
BAT60ShortMax
-90mAI
O(sc)(BM)
-60mA
iBP
BAT60ShortMax
-90mAI
O(sc)(BP)
-60mA
uUV
IO
2- VV
uvd(VIO)
2.55 2.774 V
dBDUVV
IO
- 1000 ms t
det(uv)(VIO)
5100s
dBDWakeupReaction
remote
- 100 st
d(wake-ERRN)
, t
d(wake-RXD)
-100s
dBDTxActiveMax 650 2600 st
detCL(TXEN)
650 2600 s
dBDModeChange 100 100 st
d(norm-stb)
, t
d(stb-norm)
310s
dBDERRN
Stable
110st
ERRN(min)
210s
dReactionTime
ERRN
- 100 st
d(errdet-ERRNL)
-100s
uData0_LP 400 100 mV V
IL(dif)
400 100 mV
dWU
Interrupt
0.13 1 st
sup(int)wake
130 1000 ns
uBDLogic_1 - 60 % V
IH(TXD)
0.6V
IO
5.5 V
uBDLogic_0 40 - % V
IL(TXD)
0.3 0.4V
IO
V
dBDRV
CC
-10mst
rec(uv)(VCC)
2100s
dBDRV
IO
-10mst
rec(uv)(VIO)
5100s
iBP
LeakGND
- 1600 AI
LI(BP)
1600 1600 A
iBM
LeakGND
- 1600 AI
LI(BM)
1600 1600 A
Functional class ‘bus driver remote
wakeup’
implemented; see
Section 2.4
Table 15. EPL 3.0.1 implementation in TJA1083G
EPL 3.0.1 TJA1083G
Min Max Unit Symbol Min Max Unit
TJA1083G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 1 — 18 January 2018 36 of 41
NXP Semiconductors
TJA1083G
FlexRay node transceiver
[1] V
cm
is the BP/BM common mode voltage, (V
BP
+V
BM
) / 2, and is specified in conditions column of parameters V
IH(dif)
and V
IL(dif)
for pins
BP and BM; see Table 11
. V
cm
is tested on a receiving bus driver with a transmitting bus driver that has a ground offset voltage in the
range 12.5 V to +12.5 V and transmits a 50/50 pattern.
[2] Min. value: V
o(idle)(BP)
= V
o(idle)(BM)
= 0.4V
CC
= 0.4 4.5 V = 1800 mV; max value: V
o(idle)(BP)
= V
o(idle)(BM)
= 0.6V
CC
= 0.6 5.25 V =
3150 mV; the nominal voltage is 2500 mV.
[3] The normal voltage is 0 mV.
[4] Power-off mode.
uESD
Ext
6- kVV
ESD
: HBM on pins BP and
BM to GND
-8kV
uESD
Int
2- kVV
ESD
: HBM on any other
pin
-4kV
uESD
IEC
6- kVV
ESD
: IEC61000-4-2 on
pins BP and BM to GND
-8kV
dBDRxD
R15
+ dBDRxD
F15
-13nst
(r+f)
(pin RXD; 15 pF load) - 13 ns
dBDRxD
R15
dBDRxD
F15
-5nst
(r-f)
(pin RXD; 15 pF load) - 5 ns
C_BDTxD - 10 pF C
i(TXD)
-10pF
dBDTxRxai - 325 ns t
d(TXENH-RXDH)
-300ns
uV
DIG-OUT-UV
- 500 mV V
O(UVVIO)RXD
-500mV
V
O(UVVIO)ERRN
-500mV
V
O(UVVIO)SDO
-500mV
uV
DIG-OUT-OFF
product specific V
OL(RXD)
[4]
V
IO
500 V
IO
mV
V
OL(ERRN)
[4]
-500mV
V
OL(SDO)
[4]
-500mV
R
BDTransmitter
product specific Z
o(TX)(eq)
35 100
RxD signal sum of rise and
fall time at TP4_CC
- 16.5 ns t
(r+f)
(pin RXD; 10 pF load;
simulated)
-16.5ns
dBDRxD
R25
+ dBDRxD
F25
- 16.5 ns t
(r+f)
(pin RXD; 25 pF load) - 16.5 ns
dBDRxD
R25
dBDRxD
F25
-5nst
(r-f)
(pin RXD; 25 pF load) - 5 ns
dBusTxDif - 3 ns t
(r-f)(dif)
-3ns
RxD signal difference of rise and fall
time at TP4_CC
-5nst
(r-f)
(pin RXD; 10 pF load;
simulated)
-5ns
Table 15. EPL 3.0.1 implementation in TJA1083G
EPL 3.0.1 TJA1083G
Min Max Unit Symbol Min Max Unit

TJA1083GTT/0Z

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Interface - Specialized TJA1083GTT/TSSOP14//0/REEL 13 Q1 NDP SSB
Lifecycle:
New from this manufacturer.
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