PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f Micron Technology, Inc., reserves the right to change products or specifications without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
16 ©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Configuration Register Operation
DPD operation disables all refresh-related activity. This mode will be used when the sys-
tem does not require the storage provided by the CellularRAM device. Any stored data
will become corrupted when DPD is enabled. When refresh activity has been re-enabled,
the CellularRAM device will require 150µs to perform an initialization procedure before
normal operation can resume. DPD should not be enabled using CR software access.
Temperature-Compensated Refresh (CR[6:5]) Default = +85°C Operation
The TCR bits allow for adequate refresh at four different temperature thresholds: +15°C,
+45°C, +70°C, and +85°C. The setting selected must be for a temperature higher than the
case temperature of the CellularRAM device. If the case temperature is +50°C, the system
can minimize self refresh current consumption by selecting the +70°C setting. The +15°C
and +45°C settings would result in inadequate refreshing and cause data corruption.
Page Mode READ Operation (CR[7]) Default = Disabled
The page mode operation bit determines whether page mode READ operations are
enabled. In the power-up default state, page mode is disabled.
PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f Micron Technology, Inc., reserves the right to change products or specifications without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
17 ©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Electrical Characteristics
Electrical Characteristics
Stresses greater than those listed under “Absolute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Notes: 1. -30°C exceeds the CellularRAM Working Group 1.0 specification of -25°C.
Table 4: Absolute Maximum Ratings
Parameter Rating
Voltage to Any Ball Except V
CC, VCCQ Relative to VSS
-0.50V to (4.0V or VCCQ + 0.3V, whichever is less)
Voltage on V
CC Supply Relative to VSS
-0.20V to 2.45V
Voltage on V
CCQ Supply Relative to VSS
-0.20V to 4.0V
Storage Temperature
-55°C to +150°C
Operating Temperature (case)
Wireless (see Note 1)
Industrial
-30°C to +85°C
-40°C to +85°C
Soldering Temperature and Time
10s (solder ball only)
+260°C
PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f Micron Technology, Inc., reserves the right to change products or specifications without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
18 ©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Electrical Characteristics
Notes: 1. -30°C exceeds the CellularRAM Working Group 1.0 specification of -25°C.
2. Input signals may overshoot to VCCQ + 1.0V for periods less than 2ns during transitions.
3. VIH (MIN) value is not aligned with CellularRAM Working Group 1.0 specification of VCCQ -
0.4V.
4. Input signals may undershoot to V
SS - 1.0V for periods less than 2ns during transitions
5. This parameter is specified with the outputs disabled to avoid external loading effects. The
user must add the current required to drive output capacitance expected in the actual sys-
tem.
6. I
SB (MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. In order to
achieve low standby current, all inputs must be driven to VCCQ or VSS. ISB may be slightly
higher for up to 500ms after power-up or when entering standby mode.
Table 5: Electrical Characteristics and Operating Conditions
Wireless Temperature
1
(-30ºC T
C
+85 ºC), Industrial Temperature (-40ºC < T
C
< +85ºC).
Description Conditions Symbol Min Max Units Notes
Supply Voltage
V
CC 1.70 1.95 V
I/O Supply Voltage
V
CCQ 1.70 3.30 V
Input High Voltage
V
IH 1.4 VCCQ + 0.2 V 2, 3
Input Low Voltage
V
IL -0.2 +0.4 V 4
Output High Voltage
I
OH = -0.2mA VOH 0.80 VCCQV
Output Low Voltage
I
OL = 0.2mA VOL 0.20 VCCQV
Input Leakage Current
V
IN = 0 to VCCQILI 1 μA
Output Leakage Current
OE# = V
IH or
Chip Disabled
ILO 1 μA
Operating Current
Asynchronous Random
READ/WRITE
VIN = VCCQ or 0V
Chip Enabled, IOUT = 0
ICC1 -70 25 mA 5
-85 20
Asynchronous Page READ
I
CC1P -70 15 mA 5
-85 12
Standby Current
V
IN = VCCQ or 0V
CE# = V
CCQ
I
SB Standard 120 μA6
Low-Power (L) 100

MT45W4MW16PBA-70 IT TR

Mfr. #:
Manufacturer:
Micron
Description:
IC PSRAM 64M PARALLEL 48VFBGA
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