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MT45W4MW16PBA-70 IT TR
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P30
P31-P33
P34-P34
PDF: 09005aef80be1
ee8/Source: 09005aef
80be1f7f
Micron Technology, Inc., reserves the right to change products or specifica
tions without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
28
©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Timing Diagrams
Figure 20:
Pa
ge Mode READ Operation (WE# = V
IH
)
T
able 19:
Page Mode READ Timing Parameters
Symbol
-70
-85
Units
Symbol
-70
-85
Units
Min
Max
Min
Max
Min
Max
Min
Max
t
AA
70 85
ns
t
LZ
10
10
ns
t
AP
A
20
25
ns
t
OE
20 20
ns
t
BA
70 85
ns
t
OH
55
n
s
t
BHZ
88
n
s
t
OHZ
88
n
s
t
BLZ
10 10
ns
t
OLZ
55
n
s
t
CEM
88
µ
s
t
PC
20
25
ns
t
CO
70 85
ns
t
RC
70 85
ns
t
HZ
88
n
s
ADDRESS
A[21:4]
OE#
t
AA
DATA-OUT
CE#
LB#/UB#
t
OLZ
t
LZ
DON’T CARE
UNDEFINED
High-Z
High-Z
DATA
VALID
DATA
VALID
DATA
VALID
DATA
VALID
t
OHZ
t
BA
t
BHZ
t
HZ
t
CEM
t
BLZ
t
CO
ADDRESS
A[3:0]
t
RC
t
OH
t
PC
ADDRESS VALID
t
APA
t
OE
PDF: 09005aef80be1
ee8/Source: 09005aef
80be1f7f
Micron Technology, Inc., reserves the right to change products or specifica
tions without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
29
©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Timing Diagrams
Figure 21:
WRITE Cy
cle (WE#-Controlle
d)
T
able 20:
WRITE Timing Parameters
Symbol
-70
-85
Units
Symbol
-70
-85
Units
Min
Max
Min
Max
Min
Max
Min
Max
t
AS
00
n
s
t
OW
55
n
s
t
AW
70
85
ns
t
WC
70
85
ns
t
BW
70
85
ns
t
WHZ
88
n
s
t
CW
70
85
ns
t
WP
46
50
ns
t
DH
00
n
s
t
WPH
10
10
ns
t
DW
23
25
ns
t
WR
00
n
s
ADDRESS
WE#
t
WC
t
AW
t
WR
DATA-IN
CE#
LB#/UB#
t
BW
t
WHZ
t
OW
t
DH
t
DW
t
AS
t
WP
t
WPH
DON’T CARE
High-Z
DATA-OUT
Data Valid
t
CW
OE#
ADDRESS VALID
PDF: 09005aef80be1
ee8/Source: 09005aef
80be1f7f
Micron Technology, Inc., reserves the right to change products or specifica
tions without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
30
©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Timing Diagrams
Figure 22:
WRITE Cy
cle (CE#-Contr
olled)
T
able 21:
WRITE Timing Parameters
Symbol
-70
-85
Units
Symb
ol
-70
-85
Units
Min
Max
Min
Max
Min
Max
Min
Max
t
AS
00
n
s
t
DW
23
25
ns
t
AW
70
85
ns
t
LZ
10
10
ns
t
BW
70
85
ns
t
WC
70
85
ns
t
CPH
55
n
s
t
WHZ
88
n
s
t
CW
70
85
ns
t
WP
46
50
ns
t
DH
00
n
s
t
WR
00
n
s
ADDRESS
WE#
t
WC
t
AW
t
CW
t
WR
t
CPH
DATA-IN
CE#
LB#/UB#
t
BW
t
WHZ
t
LZ
t
AS
t
DH
t
DW
t
WP
DON’T CARE
High-Z
DATA-OUT
Data Valid
OE#
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P30
P31-P33
P34-P34
MT45W4MW16PBA-70 IT TR
Mfr. #:
Buy MT45W4MW16PBA-70 IT TR
Manufacturer:
Micron
Description:
IC PSRAM 64M PARALLEL 48VFBGA
Lifecycle:
New from this manufacturer.
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