PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f Micron Technology, Inc., reserves the right to change products or specifications without notice.
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
33 ©2003 Micron Technology, Inc. All rights reserved.
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Revision History
Revision History
• Rev G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10/05
• Added new P25A-specific note to the cover page.
• Rev F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 04/05
• Removed 60ns support.
• Corrected typographic errors.
• Rev. E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12/04
• Removed all references to 32Mb density.
• Added Table 6, Maximum Standby Currents for Applying PAR and TCR Settings, on
page 19
• Added Table 7, Maximum Standby Currents for Applying PAR and TCR Settings –
Low-Power (L), on page 19
• Added Figure 13, Typical Refresh Current vs. Temperature (I
TCR), on page 20
• Added “Maximum and Typical Standby Currents” on page 19
• Rev. D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 09/04
• WE# LOW limited to
t
CEM for WRITEs.
• Last address changed by software access sequence.
• Noted software access third cycle must be CE#-controlled WRITE.
•Change
t
CEH to
t
CPH.
• Clarified TCR temperatures and setting in Table 6.
• Changed VccQ Option W to 1.70V–3.30V.
• Changed wireless temperature range to -30°C.
• Noted input HIGH voltage not aligned with the Working Group specification of
VCCQ -
0.4.
• Noted wireless temp (MIN) exceeds the Working Group spec.
• Rev. C, Preliminary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 05/04
• Clarified CE# LOW time limited by refresh—must not stay LOW longer than
t
CEM.
•Changed
t
CEM MAX to 8.
• Clarified address A[4] and higher in page mode.
•Clarified I
CC and updated symbols.
• Changed PAR options to full, one-half, one-quarter, one-eighth, or none.
• Deleted Appendix A (extended timings and all references).
•Added C
IN and CIO MIN values.
• Replaced Abbreviated Component Marks table with Part Numbering chart.
• Added measurement time clarification to I
SB and IPAR notes
• Corrected package nomenclature to VFBGA.
• WE# LOW limited to
t
CEM for WRITES.
• Last address changed by software access sequence.
• Noted software access third cycle must be CE#-controlled WRITE.
•Change
t
CEH to
t
CPH.
• Rev. B, Preliminary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12/03
• Prohibited DPD via software access.
• Updated Appendix regarding async page mode.
•Added
t
WPH,
t
CEM, and
t
CW to tables and figures where not already appropriately
represented.
• Added “Access Using ZZ#” section.
• Added software access section.
