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AsyncCellularRAM_2.fm - Rev. G 10/05 EN
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64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
Electrical Characteristics
Maximum and Typical Standby Currents
The following tables and figures refer to the maximum and typical standby currents for
the MT45W4MW16PFA device. The typical values shown in Figure 13 are measured with
the appropriate PAR and TCR settings. The maximum values shown in Table 6 and
Table 7 are measured with the relevant TCR bits set in the configuration register.
Notes: 1. For RCR[6:5] = 00b (default), refer to Figure 13, Typical Refresh Current vs. Temperature
(ITCR), on page 20 for typical values.
2. In order to achieve low standby current, all inputs must be driven to VCCQ or VSS. ISB may
be slightly higher for up to 500ms after power-up or when entering standby mode.
3. TCR values for 85°C are 100 percent tested. TCR values for 15°C, 45°C, and 70°C are sam-
pled only.
Notes: 1. For RCR[6:5] = 00b (default), refer to Figure 13, Typical Refresh Current vs. Temperature
(I
TCR), on page 20 for typical values.
2. In order to achieve low standby current, all inputs must be driven to V
CCQ or VSS. ISB may
be slightly higher for up to 500ms after power-up or when entering standby mode.
3. TCR values for 85°C are 100 percent tested. TCR values for 15°C, 45°C, and 70°C are sam-
pled only.
Table 6: Maximum Standby Currents for Applying PAR and TCR Settings
PAR
TCR
+15°C (RCR[6:5] = 10b) +45°C (RCR[6:5] = 01b) +70°C (RCR[6:5] = 00b) +85°C (RCR[6:5] = 11b)
Full Array
70 85 105 120
1/2 Array
65 80 100 115
1/4 Array
60 75 95 110
1/8 Array
57 70 90 105
0 Array
50 55 60 70
Table 7: Maximum Standby Currents for Applying PAR and TCR Settings – Low-Power (L)
PAR
TCR
+15°C (RCR[6:5] = 10b) +45°C (RCR[6:5] = 01b) +70°C (RCR[6:5] = 00b) +85°C (RCR[6:5] = 11b)
Full Array
60 70 85 100
1/2 Array
57 65 80 95
1/4 Array
54 61 75 90
1/8 Array
52 58 70 85
0 Array
50 55 60 70
