P89LPC9351_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 19 November 2008 57 of 74
NXP Semiconductors
P89LPC9351
8-bit microcontroller with 8-bit ADC
[1] Typical ratings are not guaranteed. The values listed are at room temperature, 3 V.
[2] The I
DD(oper)
,I
DD(idle)
, and I
DD(pd)
specifications are measured using an external clock with the following functions disabled: comparators,
real-time clock, and watchdog timer.
[3] The I
DD(tpd)
specification is measured using an external clock with the following functions disabled: comparators, real-time clock,
brownout detect, and watchdog timer.
[4] See Section 9 “Limiting values” for steady state (non-transient) limits on I
OL
or I
OH
. If I
OL
/I
OH
exceeds the test condition, V
OL
/V
OH
may
exceed the related specification.
[5] This specification can be applied to pins which have A/D input or analog comparator input functions when the pin is not being used for
those analog functions. When the pin is being used as an analog input pin, the maximum voltage on the pin must be limited to 4.0 V with
respect to V
SS
.
[6] Pin capacitance is characterized but not tested.
[7] Measured with port in quasi-bidirectional mode.
[8] Measured with port in high-impedance mode.
I
THL
HIGH-LOW transition
current
all ports; V
I
= 1.5 V at
V
DD
= 3.6 V
[9]
−30 - −450 µA
R
RST_N(int)
internal pull-up resistance
on pin
RST
pin
RST 10 - 30 kΩ
BOD interrupt
V
trip
trip voltage falling stage
BOICFG1, BOICFG0 = 01 2.25 - 2.55 V
BOICFG1, BOICFG0 = 10 2.60 - 2.80 V
BOICFG1, BOICFG0 = 11 3.10 - 3.40 V
rising stage
BOICFG1, BOICFG0 = 01 2.30 - 2.60 V
BOICFG1, BOICFG0 = 10 2.70 - 2.90 V
BOICFG1, BOICFG0 = 11 3.15 - 3.45 V
BOD reset
V
trip
trip voltage falling stage
BOE1, BOE0 = 01 2.10 - 2.30 V
BOE1, BOE0 = 10 2.25 - 2.55 V
BOE1, BOE0 = 11 2.80 - 3.20 V
rising stage
BOE1, BOE0 = 01 2.20 - 2.40 V
BOE1, BOE0 = 10 2.30 - 2.60 V
BOE1, BOE0 = 11 2.90 - 3.30 V
BOD EEPROM/FLASH
V
trip
trip voltage falling stage 2.25 - 2.55 V
rising stage 2.30 - 2.60 V
V
ref(bg)
band gap reference voltage 1.11 1.23 1.34 V
TC
bg
band gap temperature
coefficient
- 10 20 ppm/
°C
Table 10. Static characteristics
…continued
V
DD
= 2.4 V to 3.6 V unless otherwise specified.
T
amb
=
−
40
°
C to +85
°
C for industrial applications, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit