NCP1608
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4
Table 3. ELECTRICAL CHARACTERISTICS
V
FB
= 2.4 V, V
Control
= 4 V, Ct = 1 nF, V
CS
= 0 V, V
ZCD
= 0 V, C
DRV
= 1 nF, V
CC
= 12 V, unless otherwise specified
(For typical values, T
J
= 25°C. For min/max values, T
J
= −55°C to 125°C (Note 6), V
CC
= 12 V, unless otherwise specified)
Characteristic
Test Conditions Symbol Min Typ Max Unit
STARTUP AND SUPPLY CIRCUITS
Startup Voltage Threshold V
CC
Increasing V
CC(on)
11 12 12.5 V
Minimum Operating Voltage V
CC
Decreasing V
CC(off)
8.8 9.5 10.2 V
Supply Voltage Hysteresis H
UVLO
2.2 2.5 2.8 V
Startup Current Consumption 0 V < V
CC
< V
CC(on)
− 200 mV I
cc(startup)
24 35 mA
No Load Switching
Current Consumption
C
DRV
= open, 70 kHz Switching,
V
CS
= 2 V
I
cc1
1.4 1.7 mA
Switching Current Consumption 70 kHz Switching, V
CS
= 2 V I
cc2
2.1 2.6 mA
Fault Condition Current Consumption No Switching, V
FB
= 0 V I
cc(fault)
0.75 0.95 mA
OVERVOLTAGE AND UNDERVOLTAGE PROTECTION
Overvoltage Detect Threshold V
FB
= Increasing V
OVP
/V
REF
105 106 108 %
Overvoltage Hysteresis V
OVP(HYS)
20 60 100 mV
Overvoltage Detect Threshold
Propagation Delay
V
FB
= 2 V to 3 V ramp,
dV/dt = 1 V/ms
V
FB
= V
OVP
to V
DRV
= 10%
T
J
= −40°C to +125°C
T
J
= −55°C to +125°C (Note 6)
t
OVP
300
210
500
500
800
800
ns
Undervoltage Detect Threshold V
FB
= Decreasing V
UVP
0.25 0.31 0.4 V
Undervoltage Detect Threshold Propa-
gation Delay
V
FB
= 1 V to 0 V ramp,
dV/dt = 10 V/ms
V
FB
= V
UVP
to V
DRV
= 10%
T
J
= −40°C to +125°C
T
J
= −55°C to +125°C (Note 6)
t
UVP
100
50
200
200
300
300
ns
ERROR AMPLIFIER
Voltage Reference T
J
= 25°C
T
J
= −40°C to 125°C
T
J
= −55°C to 125°C (Note 6)
V
REF
2.475
2.460
2.450
2.500
2.500
2.500
2.525
2.540
2.540
V
Voltage Reference Line Regulation V
CC(on)
+ 200 mV < V
CC
< 20 V V
REF(line)
−10 10 mV
Error Amplifier Current Capability V
FB
= 2.6 V
V
FB
= 1.08*V
REF
V
FB
= 0.5 V
T
J
= −40°C to +125°C
T
J
= −55°C to +125°C (Note 6)
I
EA(sink)
I
EA(sink)OVP
I
EA(source)
6
10
−250
−250
10
20
−210
−210
20
30
−110
−88
mA
Transconductance V
FB
= 2.4 V to 2.6 V
T
J
= 25°C
T
J
= −40°C to 125°C
T
J
= −55°C to +125°C (Note 6)
gm
90
70
70
110
110
110
120
135
150
mS
Feedback Pin Internal Pull−Down
Resistor
V
FB
= V
UVP
to V
REF
R
FB
2 4.6 10 MW
Feedback Bias Current V
FB
= 2.5 V
T
J
= −40°C to +125°C
T
J
= −55°C to +125°C (Note 6)
I
FB
0.25
0.2
0.54
0.54
1.25
1.25
mA
Control Bias Current V
FB
= 0 V I
Control
−1 1 mA
Maximum Control Voltage I
Control(pullup)
= 10 mA, V
FB
= V
REF
T
J
= −40°C to +125°C
T
J
= −55°C to +125°C (Note 6)
V
EAH
5
5
5.5
5.5
6
6.05
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. For coldest temperature, QA sampling at −40°C in production and −55°C specification is Guaranteed by Characterization.
NCP1608
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5
Table 3. ELECTRICAL CHARACTERISTICS (Continued)
V
FB
= 2.4 V, V
Control
= 4 V, Ct = 1 nF, V
CS
= 0 V, V
ZCD
= 0 V, C
DRV
= 1 nF, V
CC
= 12 V, unless otherwise specified
(For typical values, T
J
= 25°C. For min/max values, T
J
= −55°C to 125°C (Note 6), V
CC
= 12 V, unless otherwise specified)
Characteristic UnitMaxTypMinSymbolTest Conditions
ERROR AMPLIFIER
Minimum Control Voltage to Generate
Drive Pulses
V
Control
= Decreasing until
V
DRV
is low, V
Ct
= 0 V
T
J
= −40°C to +125°C
T
J
= −55°C to +125°C (Note 6)
Ct
(offset)
0.37
0.37
0.65
0.65
0.88
1.1
V
Control Voltage Range V
EAH
– Ct
(offset)
V
EA(DIFF)
4.5 4.9 5.3 V
RAMP CONTROL
Ct Peak Voltage V
Control
= open V
Ct(MAX)
4.775 4.93 5.025 V
On Time Capacitor Charge Current V
Control
= open
V
Ct
= 0 V to V
Ct(MAX)
I
charge
235 275 297 mA
Ct Capacitor Discharge Duration V
Control
= open
V
Ct
= V
Ct(MAX)
−100 mV to 500 mV
t
Ct(discharge)
50 150 ns
PWM Propagation Delay dV/dt = 30 V/ms
V
Ct
= V
Control
− Ct
(offset)
to V
DRV
= 10%
t
PWM
130 220 ns
CURRENT SENSE
Current Sense Voltage Threshold V
ILIM
0.45 0.5 0.55 V
Leading Edge Blanking Duration V
CS
= 2 V, V
DRV
= 90% to 10% t
LEB
100 190 350 ns
Overcurrent Detection Propagation De-
lay
dV/dt = 10 V/ms
V
CS
= V
ILIM
to V
DRV
= 10%
t
CS
40 100 170 ns
Current Sense Bias Current V
CS
= 2 V I
CS
−1 1 mA
ZERO CURRENT DETECTION
ZCD Arming Threshold V
ZCD
= Increasing V
ZCD(ARM)
1.25 1.4 1.55 V
ZCD Triggering Threshold V
ZCD
= Decreasing V
ZCD(TRIG)
0.6 0.7 0.83 V
ZCD Hysteresis V
ZCD(HYS)
500 700 900 mV
ZCD Bias Current V
ZCD
= 5 V I
ZCD
−2 +2 mA
Positive Clamp Voltage I
ZCD
= 3 mA
T
J
= −40°C to +125°C
T
J
= −55°C to +125°C (Note 6)
V
CL(POS)
9.8
9.2
10
10
12
12
V
Negative Clamp Voltage I
ZCD
= −2 mA
T
J
= −40°C to +125°C
T
J
= −55°C to +125°C (Note 6)
V
CL(NEG)
−0.9
−1.1
−0.7
−0.7
−0.5
−0.5
V
ZCD Propagation Delay V
ZCD
= 2 V to 0 V ramp,
dV/dt = 20 V/ms
V
ZCD
= V
ZCD(TRIG)
to V
DRV
= 90%
t
ZCD
100 170 ns
Minimum ZCD Pulse Width t
SYNC
70 ns
Maximum Off Time in Absence of ZCD
Transition
Falling V
DRV
= 10% to
Rising V
DRV
= 90%
t
start
75 165 300 ms
DRIVE
Drive Resistance I
source
= 100 mA
I
sink
= 100 mA
R
OH
R
OL
12
6
20
13
W
Rise Time 10% to 90% t
rise
35 80 ns
Fall Time 90% to 10% t
fall
25 70 ns
Drive Low Voltage V
CC
= V
CC(on)
−200 mV,
I
sink
= 10 mA
V
out(start)
0.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. For coldest temperature, QA sampling at −40°C in production and −55°C specification is Guaranteed by Characterization.
NCP1608
www.onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 3. Overvoltage Detect Threshold vs.
Junction Temperature
Figure 4. Overvoltage Hysteresis vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
J
, JUNCTION TEMPERATURE (°C)
1501007550250−25−50
105.0
105.5
106.0
106.5
107.0
15010075250−25−50
40
50
60
70
80
V
OVP
/V
REF
, OVERVOLTAGE DETECT
THRESHOLD
V
OVP(HYS)
, OVERVOLTAGE HYSTER-
ESIS (mV)
125
Figure 5. Undervoltage Detect Threshold vs.
Junction Temperature
Figure 6. Feedback Pin Internal Pull−Down
Resistor vs. Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
J
, JUNCTION TEMPERATURE (°C)
1251007550250−25−50
0.300
0.305
0.315
0.320
0.325
0.330
1251007550250−25−50
0
1
2
6
7
V
UVP
, UNDERVOLTAGE DETECT THRESHOLD (V)
R
FB
, FEEDBACK PIN INTERNAL PULL−
DOWN RESISTOR (MW)
0.310
150 150
Figure 7. Reference Voltage vs. Junction
Temperature
Figure 8. Error Amplifier Output Current vs.
Feedback Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
FB
, FEEDBACK VOLTAGE (V)
1251007550250−25−50
2.46
2.47
2.48
2.49
2.50
2.52
2.53
2.54
3.02.52.01.51.00.50
−250
−100
−50
0
50
100
V
REF
, REFERENCE VOLTAGE (V)
I
EA
, ERROR AMPLIFIER OUTPUT CUR-
RENT (mA)
150
Device in UVP
50 125
3
4
5
2.51
−200
−150

NCP1608BDR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Power Factor Correction - PFC COST EFFECT PWR FACT CONT
Lifecycle:
New from this manufacturer.
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