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MAX16047ETN+T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P48P49-P51P52-P54P55-P57P58-P60P61-P61
MAX16047/MAX16049
12-Channel/8-Channel EEPROM-Programmable
System Managers with Nonvolatile Fault Registers
4 _______________________________________________________________________________________
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
MON_ range set to ‘00’ in r0Fh–r11h 5.6
MON_ range set to ‘01’ in r0Fh–r11h 2.8ADC MON_ Ranges ADC
RNG
MON_ range set to ‘10’ in r0Fh–r11h 1.4
V
MON_ range set to ‘00’ in r0Fh–r11h 5.46
MON_ range set to ‘01’ in r0Fh–r11h 2.73ADC LSB Step Size ADC
LSB
MON_ range set to ‘10’ in r0Fh–r11h 1.36
mV
V
TH_EN_R
EN voltage rising 0.525
EN Input-Voltage Threshold
V
TH_EN_F
EN voltage falling 0.487 0.500 0.512
V
EN Input Current I
EN
-0.5 +0.5 µA
EN Input Voltage Range 0 5.5 V
CLOSED-LOOP TRACKING
Tracking Differential Voltage Stop
Ramp
V
TRK
V
INS_
> V
TH_PL,
V
INS_
< V
TH_PG
150 mV
Tracking Differential Voltage
Hysteresis
20 %V
TRK
Tracking Differential Fault Voltage V
TRK_F
V
INS_
> V
TH_PL
,
V
INS_
< V
TH_PG
285 330 375 mV
Slew-rate register set to ‘00’ 640 800 960
Slew-rate register set to ‘01’ 320 400 480
Slew-rate register set to ‘10’ 160 200 240
Track/Sequence Slew-Rate Rising
or Falling
TRK
SLEW
Slew-rate register set to ‘11’ 80 100 120
V/s
Power-good register set to ‘00,’
V
MON_
= 3.5V
94 95 96
Power-good register set to ‘01,’
V
MON_
= 3.5V
91.5 92.5 93.5
Power-good register set to ‘10,’
V
MON_
= 3.5V
89 90 91
INS_ Power-Good Threshold V
TH_PG
Power-good register set to ‘11,’
V
MON_
= 3.5V
86.5 87.5 88.5
%V
M ON_
Power-Good Threshold
Hysteresis
V
PG_HYS
0.5 %V
TH_PG
Power-Low Threshold V
TH_PL
INS_ falling 125 142 160 mV
Power-Low Hysteresis V
TH_PL_HYS
10 mV
GPIO_ Input Impedance GPIO
INR
GPIO_ configured as INS_ 75 100 145 kΩ
INS_ to GND Pulldown
Impedance when Enabled
INS
RPD
V
INS_
= 2V 100 Ω
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 3V to 14V, T
A
= -40°C to +85°C, unless otherwise specified. Typical values are at V
CC
= 3.3V, T
A
= +25°C.) (Note 1)
MAX16047/MAX16049
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 3V to 14V, T
A
= -40°C to +85°C, unless otherwise specified. Typical values are at V
CC
= 3.3V, T
A
= +25°C.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
OUTPUTS (EN_OUT_, RESET, GPIO_)
Output-Voltage Low V
OL
I
SINK
= 2mA 0.4 V
Output-Voltage High (Push-Pull) I
SOURCE
= 100µA 2.4 V
1
GPIO1–GPIO4, V
GPIO_
= 3.3V 1Output Leakage (Open Drain) I
OUT_LKG
GPIO1–GPIO4, V
GPIO_
= 5V 22
µA
EN_OUT_ Overdrive (Charge
Pump) (EN_OUT1 to EN_OUT6
Only) Volts above V
MON_
V
OV
I
GATE_
= 0.5µA 4.6 5.1 5.6 V
EN_OUT_ Pullup Current (Charge
Pump)
I
CHG_UP
During power-up/power-down,
V
GATE_
= 1V
4.5 6 µA
EN_OUT_ Pulldown Current
(Charge Pump)
I
CHG_DOWN
During power-up/power-down,
V
GATE_
= 5V
10 µA
INPUTS (A0, GPIO_)
Logic-Input Low Voltage V
IL
0.8 V
Logic-Input High Voltage V
IH
2.0 V
SMBus INTERFACE
Logic-Input Low Voltage V
IL
Input voltage falling 0.8 V
Logic-Input High Voltage V
IH
Input voltage rising 2.0 V
V
CC
shorted to GND, SCL/SDA at 0V or
3.3V
-1 +1
Input Leakage Current
-1 +1
µA
Output-Voltage Low V
OL
I
SINK
= 3mA 0.4 V
Input Capacitance C
IN
5pF
SMBus TIMING
Serial Clock Frequency f
SCL
400 kHz
Bus Free Time Between STOP
t
BUF
1.3 µs
START Condition Setup Time t
SU:STA
0.6 µs
START Condition Hold Time t
HD:STA
0.6 µs
STOP Condition Setup Time t
SU:STO
0.6 µs
Clock Low Period t
LOW
1.3 µs
Clock High Period t
HIGH
0.6 µs
Data Setup Time t
SU:DAT
200 ns
Output Fall Time t
OF
10pF ≤ C
BUS
≤ 400pF 250 ns
Receive 0
Data Hold Time t
HD:DAT
Transmit 0.3 0.9
µs
Pulse Width of Spike Suppressed t
SP
30 ns
12-Channel/8-Channel EEPROM-Programmable
System Managers with Nonvolatile Fault Registers
_______________________________________________________________________________________ 5
MAX16047/MAX16049
12-Channel/8-Channel EEPROM-Programmable
System Managers with Nonvolatile Fault Registers
6 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 3V to 14V, T
A
= -40°C to +85°C, unless otherwise specified. Typical values are at V
CC
= 3.3V, T
A
= +25°C.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
JTAG INTERFACE
TDI, TMS, TCK Logic-Low Input
Voltage
V
IL
Input voltage falling 0.55 V
TDI, TMS, TCK Logic-High Input
Voltage
V
IH
Input voltage rising 2 V
TDO Logic-Output Low Voltage V
OL_TDO
V
DBP
≥ 2.5V, I
SINK
= 2mA 0.4 V
TDO Logic-Output High Voltage V
OH_TDO
V
DBP
≥ 2.5V, I
SOURCE
= 200µA 2.4 V
TDO Leakage Current TDO high impedance -1 +1 µA
TDI, TMS Pullup Resistors R
JPU
Pullup to V
DBP
71013kΩ
Input/Output Capacitance C
I/O
5pF
JTAG TIMING
TCK Clock Period t
1
1000 ns
TCK High/Low Time t
2,
t
3
50 500 ns
TCK to TMS, TDI Setup Time t
4
15 ns
TCK to TMS, TDI Hold Time t
5
15 ns
TCK to TDO Delay t
6
500 ns
TCK to TDO High-Z Delay t
7
500 ns
EEPROM TIMING
EEPROM Byte Write Cycle Time t
WR
(Note 6) 10.5 12 ms
Note 1: Specifications are guaranteed for the stated global conditions, unless otherwise noted. 100% production tested at T
A
= +25°C
and T
A
= +85°C. Specifications at T
A
= -40°C are guaranteed by design.
Note 2: V
UVLO
is the minimum voltage on V
CC
to ensure the device is EEPROM configured.
Note 3: Applies to RESET, fault, delay, and watchdog timeouts.
Note 4: Total unadjusted error is a combination of gain, offset, and quantization error.
Note 5: Guaranteed by design.
Note 6: An additional cycle is required when writing to configuration memory for the first time.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42P43-P45P46-P48P49-P51P52-P54P55-P57P58-P60P61-P61

MAX16047ETN+T

Mfr. #:
Buy MAX16047ETN+T
Manufacturer:
Maxim Integrated
Description:
Supervisory Circuits 12Ch EEPROM Prob System Manage
Lifecycle:
New from this manufacturer.
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