MAX16047/MAX16049
12-Channel/8-Channel EEPROM-Programmable
System Managers with Nonvolatile Fault Registers
52 ______________________________________________________________________________________
BYPASS: When the BYPASS instruction is latched into
the instruction register, TDI connects to TDO through
the 1-bit bypass test data register. This allows data to
pass from TDI to TDO without affecting the device’s
normal operation.
IDCODE: When the IDCODE instruction is latched into
the parallel instruction register, the identification data
register is selected. The device identification code is
loaded into the identification data register on the rising
edge of TCK following entry into the capture-DR state.
Shift-DR can be used to shift the identification code out
serially through TDO. During test-logic-reset, the
IDCODE instruction is forced into the instruction regis-
ter. The identification code always has a ‘1’ in the LSB
position. The next 11 bits identify the manufacturer’s
JEDEC number and number of continuation bytes fol-
lowed by 16 bits for the device and 4 bits for the ver-
sion. See Table 28.
Table 27. JTAG Instruction Set
INSTRUCTION HEX CODE SELECTED REGISTER/ACTION
BYPASS 1Fh Bypass. Mandatory instruction code.
IDCODE 00h Manufacturer ID code and part number
USERCODE 03h User code (user-defined ID)
LOAD ADDRESS 04h Load address register content
READ DATA 05h Memory read
WRITE DATA 06h Memory write
REBOOT 07h Resets the device
SAVE 08h Stores current fault information in EEPROM
SETEXTRAM 09h Extended page access on
RSTEXTRAM 0Ah Extended page access off
SETEEPADD 0Bh EEPROM page access on
RSTEEPADD 0Ch EEPROM page access off
Table 28. 32-Bit Identification Code
MSB LSB
Version (4 bits) Device ID (16 bits) Manufacturer ID (11 bits) Fixed value (1 bit)
0000 0000000000000001 00011001011 1
Table 29. 32-Bit User-Code Data
MSB LSB
D.C. (don’t cares)
I
2
C/SMBus
slave address
User identification (firmware version)
00000000000000000 See Table 31 r5Ch[7:0] contents
USERCODE: When the USERCODE instruction latches
into the parallel instruction register, the user-code data
register is selected. The device user-code loads into
the user-code data register on the rising edge of TCK
following entry into the capture-DR state. Shift-DR can
be used to shift the user-code out serially through TDO.
See Table 29. This instruction may be used to help
identify multiple MAX16047/MAX16049 devices con-
nected in a JTAG chain.
MAX16047/MAX16049
LOAD ADDRESS: This is an extension to the standard
IEEE 1149.1 instruction set to support access to the
memory in the MAX16047/MAX16049. When the LOAD
ADDRESS instruction latches into the instruction regis-
ter, TDI connects to TDO through the 8-bit memory
address test data register during the shift-DR state.
READ DATA: This is an extension to the standard IEEE
1149.1 instruction set to support access to the memory
in the MAX16047/MAX16049. When the READ DATA
instruction latches into the instruction register, TDI con-
nects to TDO through the 8-bit memory read test data
register during the shift-DR state.
WRITE DATA: This is an extension to the standard
IEEE 1149.1 instruction set to support access to the
memory in the MAX16047/MAX16049. When the WRITE
DATA instruction latches into the instruction register,
TDI connects to TDO through the 8-bit memory write
test data register during the shift-DR state.
REBOOT: This is an extension to the standard IEEE
1149.1 instruction set to initiate a software controlled
reset to the MAX16047/MAX16049. When the REBOOT
instruction latches into the instruction register, the
MAX16047/MAX16049 resets and immediately begins
the boot-up sequence.
SAVE: This is an extension to the standard IEEE 1149.1
instruction set that triggers a fault log. The current ADC
conversion results along with fault information are
saved to EEPROM depending on the configuration of
the Critical Fault Log Control register (r47h).
SETEXTRAM: This is an extension to the standard IEEE
1149.1 instruction set that allows access to the extend-
ed page. Extended registers include ADC conversion
results and GPIO input/output data.
RSTEXTRAM: This is an extension to the standard IEEE
1149.1 instruction set. Use RSTEXTRAM to return to the
default page and disable access to the extended page.
SETEEPADD: This is an extension to the standard IEEE
1149.1 instruction set that allows access to the EEPROM
page. Once the SETEEPADD command has been sent, all
addresses are recognized as EEPROM addresses only.
When accessing any EEPROM location, set the address
to the desired location, perform a dummy READ DATA
operation, and then set the address back to the desired
location. This primes the device for a subsequent series of
READ DATA operations.
RSTEEPADD: This is an extension to the standard IEEE
1149.1 instruction set. Use RSTEEPADD to return to the
default page and disable access to the EEPROM.
Applications Information
Unprogrammed Device Behavior
When the EEPROM has not been programmed using the
JTAG or I
2
C interface, the default configuration of the
EN_OUT_ outputs is open-drain active-low. If it is neces-
sary to hold an EN_OUT_ high or low to prevent prema-
ture startup of a power supply before the EEPROM is
programmed, connect a resistor to ground or the supply
voltage. Avoid connecting a resistor to ground if the out-
put is to be configured as open-drain with a separate
pullup resistor.
Device Behavior at Power-Up
When V
CC
is ramped from 0V, the RESET output is high
impedance until V
CC
reaches 1.4V, at which point it is
driven low. All other outputs are high impedance until
V
CC
reaches 2.85V, when the EEPROM contents are
copied into register memory, and after which the out-
puts assume their programmed states.
Maintaining Power During a
Fault Condition
Power to the MAX16047/MAX16049 must be main-
tained for a specific period of time to ensure a success-
ful EEPROM fault log operation during a fault that
removes power to the circuit. The amount of time
required depends on the settings in the fault control
register (r47h[1:0]) according to Table 30.
Table 30. EEPROM Fault Log Operation
Period
FAULT CONTROL
REGISTER VALUE
r47h[1:0]
DESCRIPTION
REQUIRED
PERIOD
t
FAULT
_
SAVE
(ms)
00
Failed lines and
ADC values saved
204
01 Failed lines saved 60
10 ADC values saved 168
11
No information
saved
12-Channel/8-Channel EEPROM-Programmable
System Managers with Nonvolatile Fault Registers
______________________________________________________________________________________ 53
Maintain power for shutdown during fault conditions in
applications where the always-on power supply cannot
be relied upon by placing a diode and a large capaci-
tor between the voltage source, V
IN
, and V
CC
(Figure
15). The capacitor value depends on V
IN
and the time
delay required, t
FAULT_SAVE
. Use the following formula
to calculate the capacitor size:
where the capacitance is in Farads and t
FAULT_SAVE
is
in seconds. I
CC(MAX)
is 5mA, V
DIODE
is the voltage
drop across the diode, and V
UVLO
is 2.85V. For exam-
ple, with a V
IN
of 14V, a diode drop of 0.7V, and a
t
FAULT_SAVE
of 0.204s, the minimum required capaci-
tance is 100µF.
Driving High-Side MOSFET Switches
The MAX16047/MAX16049 use external n-channel
MOSFET switches for voltage tracking applications. To
configure the part for closed-loop voltage tracking using
series-pass MOSFETs, configure up to four of the pro-
grammable outputs (EN_OUT1–EN_OUT4) of the
MAX16047/MAX16049 as closed-loop tracking outputs
and configure up to four of the GPIOs as sense-return
inputs (INS1–INS4). Connect the EN_OUT_ output to the
gate of an n-channel MOSFET, connect the source of the
MOSFET to the INS_ feedback input, and monitor the
drain side of the MOSFET with the corresponding MON_
input (see Figure 16). Both the input and the output must
be assigned to the same slot (see the
Closed–Loop
Tracking
section). Configure the power-up and power-
down slew rates in the configuration registers. To provide
additional control over power-down, enable the internal
100Ω pulldown resistors on the INS_ connections.
Up to six of the programmable outputs (EN_OUT1–
EN_OUT6) of the MAX16047/MAX16049 may be config-
ured as charge-pump outputs. In this case, they can
drive the gates of series-pass n-channel MOSFETs with-
out closed-loop tracking functionality. When configured
in this way, these outputs act as simple power switches
to turn on the voltage supply rails. Approximate the slew
rate, SR, using the following formula:
where I
CP
is the 6µA (typ) charge-pump source cur-
rent, C
GATE
is the gate capacitance of the MOSFET,
and C
EXT
is the capacitance connected from the gate
to ground. Power-down is not well controlled due to the
absence of the 100Ω pulldowns.
If more than six series-pass MOSFETs are required for
an application, additional series-pass p-channel
MOSFETS may be connected to outputs configured as
active-low open drain (Figure 17). Connect a pullup
resistor from the gate to the source of the MOSFET, and
ensure the absolute maximum ratings of the
MAX16047/MAX16049 are not exceeded.
SR
I
CC
CP
GATE EXT
=
+
()
C
tI
VV V
FAULT_SAVE CC(MAX)
IN DIODE CC(MIN)
=
×
MAX16047/MAX16049
12-Channel/8-Channel EEPROM-Programmable
System Managers with Nonvolatile Fault Registers
54 ______________________________________________________________________________________
MAX16047/MAX16049
MAX16047
MAX16049
V
CC
C
V
IN
GND
Figure 15. Power Circuit for Shutdown During Fault Conditions
MON_
EN_OUT_ INS_
V
IN
V
OUT
REFERENCE
RAMP
LOGIC
ADC MUX
V
TH_PG
100Ω
GATE
DRIVE
Figure 16. Closed-Loop Tracking

MAX16047ETN+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Supervisory Circuits 12Ch EEPROM Prob System Manage
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