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5962F1120202QXA

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P34
CYRS1543AV18
CYRS1545AV18
Document Number: 001-60007 Rev. *L Page 31 of 34
Document History Page
Document Title: CYRS1543AV18/CYRS1545AV18, 72-Mbit QDR
®
II+ SRAM Four-Word Burst Architecture with RadStop™
Technology
Document Number: 001-60007
Rev. ECN No.
Submission
Date
Orig. of
Change
Description of Change
** 2940931 05/31/2010 HRP New data sheet.
*A 3016545 08/26/2010 HRP Changed part numbers from CYRS1513AV18, CYRS1515AV18 to reflect
change to QDR II+ die.
Updated Switching Characteristics (Updated minimum and maximum values
for Setup Time, Hold Time parameters, and updated minimum and maximum
values for t
CO
parameter under Output Time parameter).
Updated Package Diagram.
Added Units of Measure.
*B 3281455 06/13/2011 HRP Changed status from Advanced to Final.
Updated Configurations (corrected typo).
Updated Selection Guide.
Updated DC Electrical Characteristics (maximum current limit values for the
parameters IDD and ISB1 based on device characterization).
Updated Radiation Performance (Limits of Radiation Data based on RHA
qualification).
Updated Thermal Resistance.
Updated Switching Characteristics (Minimum and Maximum timing values for
the parameters t
CO
, t
DOH
, t
CCQO
, t
CQOH
based on device characterization.
Updated Ordering Information (Removed × 18 option from ordering table).
Updated Package Diagram.
Changed DLL lockup cycles from 2048 to 10240 throughout document.
Updated in new template.
*C 3471321 12/21/2011 HRP Updated Identification Register Definitions (Replaced the value of Cypress
device ID (28:12) from 11010011011010100 to 11010010101010100 for
CYRS1543AV18 and replaced the value of Cypress device ID (28:12) from
11010011011100100 to 11010010101100100 for CYRS1545AV18).
*D 3524961 02/14/2012 HRP Updated Prototyping under Radiation Performance (Added two devices).
Updated Selection Guide (Removed 200 MHz option).
Updated Application Example.
Updated Truth Table.
Updated Maximum Ratings.
Updated Operating Range.
Updated Radiation Performance.
Updated Capacitance.
Updated Thermal Resistance.
Updated Switching Characteristics.
*E 3537277 02/29/2012 HRP Updated Radiation Data under Radiation Performance.
Updated Ordering Information (Added the part numbers
CYRS1543AV18-250GCMB, CYPT1543AV18-250GCMB,
CYPT1545AV18-250GCMB, 5962F1120203VXA and
CYRS1543AV18-1XWI).
*F 3617759 05/15/2012 HRP Updated Ordering Information (Added part 5962F1120103VXA).
Updated Glossary.
*G 3640834 06/08/2012 HRP Updated Radiation Performance (Updated Prototyping).
Renamed the section Class V Flow as Manufacturing Flow.
Updated Glossary.
*H 3857750 01/04/2013 HRP Updated Ordering Information (Updated part numbers).
CYRS1543AV18
CYRS1545AV18
Document Number: 001-60007 Rev. *L Page 32 of 34
*I 3900846 02/11/2013 HRP Updated Neutron Soft Error Immunity (Changed value of Test Conditions of
SEL parameter from 85 °C to 125 °C).
Updated Pin Definitions (Changed Pin Name from A to A
[x:0]
).
Updated Functional Overview (Updated Qualification and Screening
(Replaced Class V with Class Q)).
Updated Application Example (Replaced four with two).
*J 3934155 03/15/2013 MISA Updated Selection Guide:
Changed Maximum operating current (125 °C, concurrent R/W) corresponding
to “× 18” for 250 MHz frequency from 1225 mA to 1275 mA.
Changed Maximum operating current (125 °C, concurrent R/W) corresponding
to “× 36” for 250 MHz frequency from 1225 mA to 1275 mA.
Updated Electrical Characteristics:
Updated DC Electrical Characteristics:
Changed maximum value of I
DD
parameter corresponding to “× 18” for
250 MHz frequency from 1225 mA to 1275 mA.
Changed maximum value of I
DD
parameter corresponding to “× 36” for
250 MHz frequency from 1225 mA to 1275 mA.
Changed maximum value of I
SB1
parameter corresponding to “× 18” for
250 MHz frequency from 510 mA to 570 mA.
Changed maximum value of I
SB1
parameter corresponding to “× 36” for
250 MHz frequency from 510 mA to 570 mA.
Removed 200 MHz frequency related information.
Updated Switching Characteristics:
Changed maximum value of t
CO
and t
CHQV
parameters from 0.7 ns to 0.85 ns.
Changed minimum value of t
DOH
and t
CHQX
parameters from –0.7 ns to
–0.85 ns.
Changed maximum value of t
CCQO
and t
CHCQV
parameters from 0.7 ns to
0.85 ns.
Changed minimum value of t
CQOH
and t
CHCQX
parameters from –0.7 ns to
–0.5 ns.
Removed 200 MHz frequency related information.
Updated Package Diagram:
spec 001-58969 – Changed revision from *C to *D.
*K 4286754 02/21/2014 MISA Updated Functional Overview:
Updated Qualification and Screening:
Replaced “Class Q” with “Class Q, Class V”.
Updated Ordering Information (Updated part numbers).
Updated to new template.
Document History Page (continued)
Document Title: CYRS1543AV18/CYRS1545AV18, 72-Mbit QDR
®
II+ SRAM Four-Word Burst Architecture with RadStop™
Technology
Document Number: 001-60007
Rev. ECN No.
Submission
Date
Orig. of
Change
Description of Change
CYRS1543AV18
CYRS1545AV18
Document Number: 001-60007 Rev. *L Page 33 of 34
*L 4618500 01/09/2015 PRIT Updated Radiation Performance:
Updated Radiation Data:
Updated 2
nd
bulleted point.
Updated Functional Description:
Added “For a complete list of related resources, click here.” at the end.
Updated Pin Definitions:
Updated description of CQ and CQ pins.
Updated Functional Overview:
Updated description.
Updated Read Operations:
Updated description.
Updated Write Operations:
Updated description.
Updated Application Example:
Updated Figure 2.
Document History Page (continued)
Document Title: CYRS1543AV18/CYRS1545AV18, 72-Mbit QDR
®
II+ SRAM Four-Word Burst Architecture with RadStop™
Technology
Document Number: 001-60007
Rev. ECN No.
Submission
Date
Orig. of
Change
Description of Change
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P34

5962F1120202QXA

Mfr. #:
Buy 5962F1120202QXA
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 72M PARALLEL 165CCGA
Lifecycle:
New from this manufacturer.
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