CYRS1543AV18
CYRS1545AV18
Document Number: 001-60007 Rev. *L Page 4 of 34
Radiation Hardened Design
The single event latch up (SEL) immunity is improved by a
radiation hardened design technique developed by Cypress
called RadStop. This design mitigation technique allows the SEL
performance to achieve radiation hard performance levels.
Manufacturing Flow
Step Screen Method Requirement
1 Wafer lot acceptance test TM 5007
2 Internal visual 2010, Condition A 100%
3 Serialization 100%
4 Temperature cycling 1010, Condition C, 50 cycles minimum 100%
5 Constant acceleration 2001, YI orientation only 100%
6 Condition TBD (package in design)
7 Particle impact noise detection (PIND) 2020 Condition A 100%
8 Radiographic (X-Ray) 2012, one view (Y-1 orientation) only
9 Pre burn in electrical parameters In accordance with applicable Cypress specification 100%
10 Dynamic burn in 1015, Condition D 100%
240 hours at 125 °C or 120 hours at 150 °C minimum
11 Interim (Post dynamic burn in) electricals In accordance with applicable Cypress device specifications 100%
12 Static burn in 1015, Condition C, 72 hours at 150 °C or 144 hours at 125 °C
minimum
100%
13 Interim (post static burn in) electricals In accordance with applicable Cypress device specifications 100%
14 Percentage defective allowable (PDA)
calculation
5% overall, 3% functional parameters at 25 °C All lots
15 Final electrical test In accordance with applicable Cypress device specifications 100%
a. Static tests
(1) 25 °C 5005, Table I, Subgroup 1
(2) –55 °C and +125 °C 5005, Table I, Subgroup 2, 3
b. Functional tests
(1) 25 C 5005, Table I, Subgroup 7
(2) –55 °C and +125 °C 5005, Table I, Subgroup 8a, 8b
c. Switching test at 25 °C 5005, Table I, Subgroup 9
16 Seal (fine and gross leak test) 1014 100%
17 External visual 2009 100%
18 Wafer lot specific life test (Group C) Mil-PRF 38535, Appendix B, section B.4.2.c All wafer lots
Neutron Soft Error Immunity
Parameter Description
Test
Conditions
Typ Max* Unit
LSBU Logical
single-bit
upsets
25 °C 320 368 FIT/
Mb
LMBU Logical
multi-bit
upsets
25 °C 0 0.01 FIT/
Mb
SEL Single event
latch up
125 °C 0 0.1 FIT/
Dev
* No LMBU or SEL events occurred during testing; this column represents a
statistical
2
, 95% confidence limit calculation. For more details refer to
Application Note AN54908Accelerated Neutron SER Testing and Calculation
of Terrestrial Failure Rates”
CYRS1543AV18
CYRS1545AV18
Document Number: 001-60007 Rev. *L Page 5 of 34
Pin Configuration
Pin configurations for CYRS1543AV18 and CYRS1545AV18.
[1]
Figure 1. 165-ball CCGA pinout
CYRS1543AV18 (4 M × 18)
1 2 3 4 5 6 7 8 9 10 11
A CQ NC/144M A WPS BWS
1
K NC/288M RPS AACQ
B NC Q9 D9 A NC K BWS
0
ANCNCQ8
C NC NC D10 V
SS
ANCAV
SS
NC Q7 D8
D NC D11 Q10 V
SS
V
SS
V
SS
V
SS
V
SS
NC NC D7
E NC NC Q11 V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC D6 Q6
F NC Q12 D12 V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC NC Q5
G NC D13 Q13 V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC NC D5
H DOFF V
REF
V
DDQ
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
V
DDQ
V
REF
ZQ
J NC NC D14 V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC Q4 D4
K NC NC Q14 V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC D3 Q3
L NC Q15 D15 V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC NC Q2
M NC NC D16 V
SS
V
SS
V
SS
V
SS
V
SS
NC Q1 D2
N NC D17 Q16 V
SS
AAAV
SS
NC NC D1
P NC NC Q17 A A QVLD A A NC D0 Q0
R TDOTCKAAANCAAATMSTDI
CYRS1545AV18 (2 M × 36)
1 2 3 4 5 6 7 8 9 10 11
A CQ NC/288M A WPS BWS
2
K BWS
1
RPS A NC/144M CQ
B Q27 Q18 D18 A BWS
3
KBWS
0
AD17Q17Q8
C D27 Q28 D19 V
SS
ANCAV
SS
D16 Q7 D8
D D28 D20 Q19 V
SS
V
SS
V
SS
V
SS
V
SS
Q16 D15 D7
E Q29 D29 Q20 V
DDQ
V
SS
V
SS
V
SS
V
DDQ
Q15 D6 Q6
F Q30 Q21 D21 V
DDQ
V
DD
V
SS
V
DD
V
DDQ
D14 Q14 Q5
G D30 D22 Q22 V
DDQ
V
DD
V
SS
V
DD
V
DDQ
Q13 D13 D5
H DOFF V
REF
V
DDQ
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
V
DDQ
V
REF
ZQ
J D31 Q31 D23 V
DDQ
V
DD
V
SS
V
DD
V
DDQ
D12 Q4 D4
K Q32 D32 Q23 V
DDQ
V
DD
V
SS
V
DD
V
DDQ
Q12 D3 Q3
L Q33 Q24 D24 V
DDQ
V
SS
V
SS
V
SS
V
DDQ
D11 Q11 Q2
M D33 Q34 D25 V
SS
V
SS
V
SS
V
SS
V
SS
D10 Q1 D2
N D34 D26 Q25 V
SS
AAAV
SS
Q10 D9 D1
P Q35 D35 Q26 A A QVLD A A Q9 D0 Q0
R TDOTCKAAANCAAATMSTDI
Note
1. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.
CYRS1543AV18
CYRS1545AV18
Document Number: 001-60007 Rev. *L Page 6 of 34
Pin Definitions
Pin Name I/O Pin Description
D
[x:0]
Input-
Synchronous
Data input signals. Sampled on the rising edge of K and K clocks when valid write operations are active.
CYRS1543AV18 D
[17:0]
CYRS1545AV18 D
[35:0]
WPS Input-
Synchronous
Write port select Active LOW. Sampled on the rising edge of the K clock. When asserted active, a
write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D
[x:0]
.
BWS
0
,
BWS
1
,
BWS
2
,
BWS
3
Input-
Synchronous
Byte write select (BWS) 0, 1, 2, and 3 Active LOW. Sampled on the rising edge of the K and K clocks
when write operations are active. Used to select which byte is written into the device during the current
portion of the write operations. Bytes not written remain unaltered.
CYRS1543AV18 BWS
0
controls D
[8:0]
and BWS
1
controls D
[17:9].
CYRS1545AV18 BWS
0
controls D
[8:0]
, BWS
1
controls D
[17:9]
,
BWS
2
controls D
[26:18]
and BWS
3
controls D
[35:27].
All the BWS are sampled on the same edge as the data. Deselecting a BWS ignores the corresponding
byte of data and it is not written into the device
.
A
[x:0]
Input-
Synchronous
Address inputs. Sampled on the rising edge of the K clock during active read and write operations.
These address inputs are multiplexed for both read and write operations. Internally, the device is
organized as 4 M × 18 (4 arrays each of 1 M × 18) for CYRS1543AV18 and 2 M × 36 (4 arrays each of
512 K × 36) for CYRS1545AV18. Therefore, only 20 address inputs for CYRS1543AV18 and 19 address
inputs for CYRS1545AV18. These inputs are ignored when the appropriate port is deselected.
Q
[x:0]
Outputs-
Synchronous
Data output signals. These pins drive out the requested data when the read operation is active. Valid
data is driven out on the rising edge of the K and K
clocks during read operations. On deselecting the
read port, Q
[x:0]
are automatically tristated.
CYRS1543AV18 Q
[17:0]
CYRS1545AV18 Q
[35:0]
RPS Input-
Synchronous
Read port select Active LOW. Sampled on the rising edge of positive input clock (K). When active,
a read operation is initiated. Deasserting deselects the read port. When deselected, the pending access
is allowed to complete and the output drivers are automatically tristated following the next rising edge of
the K clock. Each read access consists of a burst of four sequential transfers.
QVLD Valid Output
Indicator
Valid output indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ
.
K Input Clock Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q
[x:0]
when in single clock mode. All accesses are initiated on the rising
edge of K.
K
Input Clock Negative input clock input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q
[x:0]
when in single clock mode.
CQ Echo Clock Synchronous echo clock outputs. This is a free running clock and is synchronized to the input clock
K. The timings for the echo clocks are shown in the Switching Characteristics on page 25.
CQ
Echo Clock Synchronous echo clock outputs. This is a free running clock and is synchronized to the input clock
K
. The timings for the echo clocks are shown in the Switching Characteristics on page 25.
ZQ Input Output impedance matching input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ
, and Q
[x:0]
output impedance are set to 0.2 × RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin can be connected directly to V
DDQ
, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left
unconnected.
DOFF Input DLL turn off Active LOW. Connecting this pin to ground turns off the DLL inside the device. The
timings in the DLL turned off operation differs from those listed in this data sheet. For normal operation,
this pin can be connected to a pull up through a 10 K or less pull up resistor. The device behaves in
QDR I mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up
to 167 MHz with QDR I timing.
TDO Output Test data out (TDO) Pin for JTAG.

5962F1120202QXA

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 72M PARALLEL 165CCGA
Lifecycle:
New from this manufacturer.
Delivery:
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