SI8220BD-D-ISR Datasheet SI8220DB-D-IS, SI8220BB-D-IS, SI8220BB-D-ISR | P7-P9

Si8220/21

Rev. 1.2 7

Figure 3. Common Mode Transient Immunity Test Circuit

Oscilloscope

Isolated 

Supply

Si822x

VDD

12V

Supply

High Voltage

Surge Generator

VcmSu rge

Output

High Voltage

Differential Probe

GND

CATHODE

ANODE

InputSignal

Switch

Inpu t

Output

Isolated 

Ground

267

Si8220/21

8 Rev. 1.2

3. Regulatory Information

Table 2. Regulatory Information*

CSA

The Si822x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.

61010-1: Up to 600 V

RMS

reinforced insulation working voltage; up to 600 V

RMS

basic insulation working voltage.

60950-1: Up to 600 V

RMS

reinforced insulation working voltage; up to 1000 V

RMS

basic insulation working volt-

age.

60601-1: Up to 125 V

RMS

reinforced insulation working voltage; up to 380 V

RMS

basic insulation working voltage.

VDE

The Si822x is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.

60747-5-2: Up to 891 V

peak

for basic insulation working voltage.

60950-1: Up to 600 V

RMS

reinforced insulation working voltage; up to 1000 V

RMS

basic insulation working

voltage.

The Si822x is certified under UL1577 component recognition program. For more details, see File E257455.

Rated up to 5000 V

RMS

isolation voltage for basic protection.

*Note: Regulatory Certifications apply to 2.5 kV

RMS

rated devices which are production tested to 3.0 kV

RMS

for 1 sec.

Regulatory Certifications apply to 3.75 kV

RMS

rated devices which are production tested to 4.5 kV

RMS

for 1 sec.

Regulatory Certifications apply to 5.0 kV

RMS

rated devices which are production tested to 6.0 kV

RMS

for 1 sec.

For more information, see "9.Ordering Guide" on page 22.

Si8220/21

Rev. 1.2 9

Table 3. Insulation and Safety-Related Specifications

Parameter Symbol Test Condition

Value

Unit

SOIC-16

SOIC-8

Nominal Air Gap (Clearance)

L(IO1) 8.0 min 4.9 min mm

Nominal External Tracking (Creepage)

L(IO2) 8.0 min 4.01 min mm

Minimum Internal Gap (Internal Clearance)

0.014 0.014 mm

Tracking Resistance

(Proof Tracking Index)

PTI IEC60112 600 600 V

Erosion Depth

ED 0.040 0.040 mm

Resistance (Input-Output)



Capacitance (Input-Output)

f = 1 MHz 2.0 1.0 pF

Input Capacitance

4.0 4.0 pF

Notes:

1. The values in this table correspond to the nominal creepage and clearance values as detailed in "12.Package Outline:

16-Pin Wide Body SOIC" on page 25, "10.Package Outline: 8-Pin Narrow Body SOIC" on page 23. VDE certifies the

clearance and creepage limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB

SOIC-8 package. UL does not impose a clearance and creepage minimum for component level certifications. CSA

certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB

SOIC-16 package.

2. To determine resistance and capacitance, the Si822x is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8)

are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second

terminal. The parameters are then measured between these two terminals.

3. Measured from input pin to ground.

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P24 P25-P27 P28-P30 P31-P32

SI8220BD-D-ISR

Mfr. #:

Buy SI8220BD-D-ISR

Manufacturer:

Silicon Labs

Description:

Gate Drivers 5 kV opto input isolated gate driver

Lifecycle:

New from this manufacturer.

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SI8220BD-D-ISR

SI8220BD-D-ISR

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