LPC2458 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4.1 — 15 October 2013 43 of 81
NXP Semiconductors
LPC2458
Single-chip 16-bit/32-bit micro
8. Limiting values
[1] The following applies to the limiting values:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated
maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to V
SSIO
/V
SSCORE
unless otherwise noted.
[2] Including voltage on outputs in 3-state mode.
[3] Not to exceed 4.6 V.
[4] The peak current is limited to 25 times the corresponding maximum current.
[5] The maximum non-operating storage temperature is different than the temperature for required shelf life which should be determined
based on required shelf lifetime. Please refer to the JEDEC spec (J-STD-033B.1) for further details.
[6] Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol Parameter Conditions Min Max Unit
V
DD(3V3)
supply voltage (3.3 V) core and external
rail
3.0 3.6 V
V
DD(DCDC)(3V3)
DC-to-DC converter supply voltage
(3.3 V)
3.0 3.6 V
V
DDA
analog 3.3 V pad supply voltage 0.5 +4.6 V
V
i(VBAT)
input voltage on pin VBAT for the RTC 0.5 +4.6 V
V
i(VREF)
input voltage on pin VREF 0.5 +4.6 V
V
IA
analog input voltage on ADC related
pins
0.5 +5.1 V
V
I
input voltage 5 V tolerant I/O
pins; only valid
when the V
DD(3V3)
supply voltage is
present
[2]
0.5 +6.0 V
other I/O pins
[2][3]
0.5 V
DD(3V3)
+
0.5
V
I
DD
supply current per supply pin
[4]
- 100 mA
I
SS
ground current per ground pin
[4]
- 100 mA
T
stg
storage temperature non-operating
[5]
65 +150 C
P
tot(pack)
total power dissipation (per package) based on package
heat transfer, not
device power
consumption
-1.5W
V
ESD
electrostatic discharge voltage human body
model; all pins
[6]
2500 +2500 V
LPC2458 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4.1 — 15 October 2013 44 of 81
NXP Semiconductors
LPC2458
Single-chip 16-bit/32-bit micro
9. Thermal characteristics
The average chip junction temperature, T
j
(C), can be calculated using the following
equation:
(1)
T
amb
= ambient temperature (C),
R
th(j-a)
= the package junction-to-ambient thermal resistance (C/W)
P
D
= sum of internal and I/O power dissipation
The internal power dissipation is the product of I
DD
and V
DD
. The I/O power dissipation of
the I/O pins is often small and many times can be negligible. However it can be significant
in some applications.
T
j
T
amb
P
D
R
th j a
+=
Table 7. Thermal characteristics
V
DD
= 3.0 V to 3.6 V; T
amb
=
40
C to +85
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
T
j(max)
maximum junction
temperature
--125 C
Table 8. Thermal resistance value (C/W): ±15 %
V
DD
= 3.0 V to 3.6 V; T
amb
=
40
C to +85
C unless otherwise specified
TFBGA180
ja
JEDEC (4.5 in 4 in)
0 m/s 45.5
1 m/s 38.3
2.5 m/s 33.8
8-layer (4.5 in 3 in)
0 m/s 38
1 m/s 33.5
2.5 m/s 29.8
jc 8.9
jb 12
LPC2458 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4.1 — 15 October 2013 45 of 81
NXP Semiconductors
LPC2458
Single-chip 16-bit/32-bit micro
10. Static characteristics
Table 9. Static characteristics
T
amb
=
40
C to +85
C for commercial applications, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
V
DD(3V3)
supply voltage (3.3 V) core and external rail 3.0 3.3 3.6 V
V
DD(DCDC)(3V3)
DC-to-DC converter
supply voltage (3.3 V)
3.0 3.3 3.6 V
V
DDA
analog 3.3 V pad
supply voltage
3.0 3.3 3.6 V
V
i(VBAT)
input voltage on pin
VBAT
[2]
2.0 3.3 3.6 V
V
i(VREF)
input voltage on pin
VREF
2.5 3.3 V
DDA
V
I
DD(DCDC)act(3V3)
active mode DC-to-DC
converter supply
current (3.3 V)
V
DD(DCDC)(3V3)
=3.3V;
T
amb
=25C; code
while(1){}
executed from flash; no
peripherals enabled;
PCLK = CCLK
CCLK = 10 MHz - 15 - mA
CCLK = 72 MHz - 63 - mA
all peripherals enabled;
PCLK = CCLK / 8
CCLK = 10 MHz - 21 - mA
CCLK = 72 MHz - 92 - mA
all peripherals enabled;
PCLK = CCLK
CCLK = 10 MHz - 27 - mA
CCLK = 72 MHz - 125 - mA
I
DD(DCDC)pd(3V3)
Power-down mode
DC-to-DC converter
supply current (3.3 V)
V
DD(DCDC)(3V3)
= 3.3 V;
T
amb
=25C
[3]
-113-A
I
DD(DCDC)dpd(3V3)
Deep power-down
mode DC-to-DC
converter supply
current (3.3 V)
[3]
-20-A
I
BATact
active mode battery
supply current
[4]
-20-A
I
BAT
battery supply current Deep power-down mode
[3]
-20-A

LPC2458FET180,551

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
ARM Microcontrollers - MCU ARM7 512KF/USBH/ENET
Lifecycle:
New from this manufacturer.
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