LPC2458 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4.1 — 15 October 2013 46 of 81
NXP Semiconductors
LPC2458
Single-chip 16-bit/32-bit micro
Standard port pins, RESET, RTCK
I
IL
LOW-level input
current
V
I
= 0 V; no pull-up - - 3 A
I
IH
HIGH-level input
current
V
I
=V
DD(3V3)
; no pull-down - - 3 A
I
OZ
OFF-state output
current
V
O
=0V; V
O
=V
DD(3V3)
;
no pull-up/down
-- 3A
I
latch
I/O latch-up current (0.5V
DD(3V3)
) < V
I
<
(1.5V
DD(3V3)
);
T
j
< 125 C
- - 100 mA
V
I
input voltage pin configured to provide a
digital function
[5][6][7]
[8]
0- 5.5V
V
O
output voltage output active 0 - V
DD(3V3)
V
V
IH
HIGH-level input
voltage
2.0 - - V
V
IL
LOW-level input
voltage
-- 0.8V
V
hys
hysteresis voltage 0.4 - - V
V
OH
HIGH-level output
voltage
I
OH
= 4 mA
[9]
V
DD(3V3)
0.4
--V
V
OL
LOW-level output
voltage
I
OL
= 4 mA
[9]
-- 0.4V
I
OH
HIGH-level output
current
V
OH
=V
DD(3V3)
0.4 V
[9]
4- - mA
I
OL
LOW-level output
current
V
OL
=0.4V
[9]
4- - mA
I
OHS
HIGH-level
short-circuit output
current
V
OH
=0V
[10]
-- 45 mA
I
OLS
LOW-level short-circuit
output current
V
OL
=V
DDA
[10]
-- 50mA
I
pd
pull-down current V
I
=5V
[11]
10 50 150 A
I
pu
pull-up current V
I
=0V 15 50 85 A
V
DD(3V3)
<V
I
<5V
[11]
00 0A
I
2
C-bus pins (P0[27] and P0[28])
V
IH
HIGH-level input
voltage
0.7V
DD(3V3)
--V
V
IL
LOW-level input
voltage
- - 0.3V
DD(3V3)
V
V
hys
hysteresis voltage - 0.05V
DD(3V3)
-V
V
OL
LOW-level output
voltage
I
OLS
=3 mA
[9]
-- 0.4V
I
LI
input leakage current V
I
=V
DD(3V3)
[12]
-2 4A
V
I
=5V - 10 22 A
Table 9. Static characteristics …continued
T
amb
=
40
C to +85
C for commercial applications, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
LPC2458 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4.1 — 15 October 2013 47 of 81
NXP Semiconductors
LPC2458
Single-chip 16-bit/32-bit micro
[1] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages
[2] The RTC typically fails when V
i(VBAT)
drops below 1.6 V.
[3] V
DD(DCDC)(3V3)
= 3.3 V; V
DD(3V3)
= 3.3 V; V
i(VBAT)
= 3.3 V; T
amb
=25C.
[4] On pin VBAT.
[5] Including voltage on outputs in 3-state mode.
[6] V
DD(3V3)
supply voltages must be present.
[7] 3-state outputs go into 3-state mode when V
DD(3V3)
is grounded.
[8] Please also see the errata note mentioned in errata sheet.
[9] Accounts for 100 mV voltage drop in all supply lines.
[10] Allowed as long as the current limit does not exceed the maximum current allowed by the device.
[11] Minimum condition for V
I
= 4.5 V, maximum condition for V
I
=5.5V.
[12] To V
SSIO
.
[13] Includes external resistors of 33 1 % on D+ and D.
Oscillator pins
V
i(XTAL1)
input voltage on pin
XTAL1
0.5 1.8 1.95 V
V
o(XTAL2)
output voltage on pin
XTAL2
0.5 1.8 1.95 V
V
i(RTCX1)
input voltage on pin
RTCX1
0.5 1.8 1.95 V
V
o(RTCX2)
output voltage on pin
RTCX2
0.5 1.8 1.95 V
USB pins
I
OZ
OFF-state output
current
0V<V
I
<3.3V - - 10 A
V
BUS
bus supply voltage - - 5.25 V
V
DI
differential input
sensitivity voltage
(D+) (D) 0.2 - - V
V
CM
differential common
mode voltage range
includes V
DI
range 0.8 - 2.5 V
V
th(rs)se
single-ended receiver
switching threshold
voltage
0.8 - 2.0 V
V
OL
LOW-level output
voltage for
low-/full-speed
R
L
of 1.5 k to 3.6 V - - 0.18 V
V
OH
HIGH-level output
voltage (driven) for
low-/full-speed
R
L
of 15 k to GND 2.8 - 3.5 V
C
trans
transceiver
capacitance
pin to GND - - 20 pF
Z
DRV
driver output
impedance for driver
which is not
high-speed capable
with 33 series resistor;
steady state drive
[13]
36 - 44.1
Table 9. Static characteristics
…continued
T
amb
=
40
C to +85
C for commercial applications, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
LPC2458 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4.1 — 15 October 2013 48 of 81
NXP Semiconductors
LPC2458
Single-chip 16-bit/32-bit micro
10.1 Power-down mode
V
i(VBAT)
= V
DD(DCDC)(3V3)
= 3.3 V; T
amb
=25C.
Fig 4. I/O maximum supply current I
DD(IO)
versus temperature in Power-down mode
V
DD(3V3)
= V
DD(DCDC)(3V3)
= 3.3 V; T
amb
=25C.
Fig 5. RTC battery maximum supply current I
BAT
versus temperature in Power-down
mode
002aae049
2
2
0
4
I
DD(IO)
(μA)
4
temperature (°C)
40 853510 6015
V
DD(3V3)
= 3.3 V
V
DD(3V3)
= 3.0 V
002aae050
V
i(VBAT)
= 3.3 V
V
i(VBAT)
= 3.0 V
10
30
20
40
I
BAT
(μA)
0
temperature (°C)
40 853510 6015

LPC2458FET180,551

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
ARM Microcontrollers - MCU ARM7 512KF/USBH/ENET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet