Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
19
Rev. 00D
06/02/08
IS42S32200E
DON'T CARE
UNDEFINED
CLK
COMMAND
DQ
READ NOP NOP NOP
CAS Latency - 3
tAC
tOH
DOUT
T0 T1 T2 T3 T4
tLZ
CLK
COMMAND
DQ
READ NOP NOP
CAS Latency - 2
tAC
tOH
DOUT
T0 T1 T2 T3
tLZ
CAS Latency
same bank. The PRECHARGE command should be issued
x
cycles before the clock edge at which the last desired
data element is valid, where
x
equals the CAS latency
minus one. This is shown in the READ to PRECHARGE
diagram for each possible CAS latency; data element
n
+
3 is either the last of a burst of four or the last desired of a
longer burst. Following the PRECHARGE command, a
subsequent command to the same bank cannot be issued
until tRP is met. Note that part of the row precharge time is
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the
PRECHARGE command is that it requires that the com-
mand and address buses be available at the appropriate
time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate
fixed-length or full-page bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The
BURST TERMINATE command should be issued
x
cycles
before the clock edge at which the last desired data
element is valid, where
x
equals the CAS latency minus
one. This is shown in the READ Burst Termination
diagram for each possible CAS latency; data element
n
+
3 is the last desired data element of a longer burst.
20
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00D
06/02/08
IS42S32200E
DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6
READ
NOP NOP NOP READ NOP NOP
D
OUT
n
D
OUT
n+1
D
OUT
n+2
D
OUT
n+3
D
OUT
b
BANK,
COL n
BANK,
COL b
CAS Latency - 2
x = 1 cycle
DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6 T7
READ
NOP NOP NOP READ NOP NOP NOP
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
DOUT b
BANK,
COL n
BANK,
COL b
CAS Latency - 3
x = 2 cycles
Consecutive READ Bursts
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
21
Rev. 00D
06/02/08
IS42S32200E
DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5
READ
READ
READ
READ
NOP NOP
DOUT n
DOUT b
DOUT m
DOUT x
BANK,
COL n
BANK,
COL b
CAS Latency - 2
BANK,
COL m
BANK,
COL x
DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6
READ
READ
READ
READ
NOP NOP NOP
D
OUT
n
D
OUT
b
D
OUT
m
D
OUT
x
BANK,
COL n
BANK,
COL b
CAS Latency - 3
BANK,
COL m
BANK,
COL x
Random READ Accesses

IS42S32200E-6BI-TR

Mfr. #:
Manufacturer:
Description:
DRAM 64M (2Mx32) 166MHz SDRAM, 3.3v
Lifecycle:
New from this manufacturer.
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