NXP Semiconductors
NHS3152
Therapy adherence resistive monitor
NHS3152 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 3.03 — 15 June 2018
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10 Static characteristics
Table 21. Static characteristics
T
amb
= −40 °C to +85 °C, unless otherwise stated.
Symbol Parameter Conditions Min Typ Max Unit
Supply pins
V
DD
supply voltage 1.72 3.0 3.60 V
I
DD
supply current voltage and clock frequency
dependent
[1]
- - - µA
I
L(off)
off-state leakage current - - 50 nA
I
DD(pd)
power-down mode supply current Deep power-down mode - 3 - µA
Standard GPIO pins
V
IH
HIGH-level input voltage 0.7V
DD
- - V
V
IL
LOW-level input voltage - - 0.3V
DD
V
V
hys
hysteresis voltage 0.4 - - V
R
pd
pull-down resistance - 72 - kΩ
R
pu
pull-up resistance - 73 - kΩ
HIGH-level V
DD
= 1.8 V
[2]
- 2 - mA
HIGH-level V
DD
= 3.6 V
[2]
- 8 - mA
LOW-level V
DD
= 1.8 V
[2]
- 4 - mA
I
S
source current
LOW-level V
DD
= 3.6 V
[2]
- 16 - mA
High-drive GPIO pins
HIGH-level V
DD
= 1.8 V
[3]
4 - 6 mA
HIGH-level V
DD
= 3.6 V
[3]
13 - 18 mA
LOW-level V
DD
= 1.8 V
[3]
5.5 - 8 mA
I
S
source current
LOW-level V
DD
= 3.6 V
[3]
22 - 32 mA
I
2
C-bus pins
LOW-level V
DD
= 1.8 V
[4]
2 - 8.5 mAI
S
source current
LOW-level V
DD
= 3.6 V
[4]
9.5 - 38 mA
Brownout detect
falling V
DD
- 1.8 - VV
trip(bo)
brownout trip voltage
rising V
DD
- 1.875 - V
V
hys
hysteresis voltage - 75 - mV
General
R
pu(int)
internal pull-up resistance on pin RESETN - 100 - kΩ
C
ext
external capacitance on pin RESETN - - 1 nF
[1] See Figure 15
[2] PIO0_0, PIO0_1, PIO0_2, PIO0_6, PIO0_8, PIO0_9
[3] PIO0_3, PIO0_7, PIO0_10, PIO0_11
[4] PIO0_4, PIO0_5
